JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE= -6V, IC= -2mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) fT Transition frequency Collector Output Capacitance Noise Figure CLASSIFICATION Rank Range OF 70 400 IC= -100mA, IB= -10mA -0.3 V IC= -100mA, IB= -10mA -1.1 V VCE= -10 V, IC= -1mA f =30MHz 80 MHz Cob VCB=-10V,IE=0,f=1MHZ 7 pF NF VCE= -6 V, IC= -0.1mA, f =1KHz,RG=10K 6 dB hFE O Y GR 70-140 120-240 200-400 A,May,2011