JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC546/BC547/BC548 TRANSISTOR (NPN) 1. COLLECTOR FEATURES z High Voltage z Complement to BC556,BC557,BC558 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Value Unit BC546 80 BC547 50 BC548 30 BC546 65 BC547 45 BC548 30 BC546 6 V BC547 6 V BC548 5 V V V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 625 mW Thermal Resistance from Junction to Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA B,Feb,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions BC546 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BC547 V(BR)CBO IC= 0.1mA,IE=0 30 BC546 65 V(BR)CEO IC=1mA,IB=0 30 BC546 6 V(BR)EBO IE=10μA,IC=0 V V 6 5 BC546 Collector cut-off current Unit V 45 BC548 BC547 Max 50 BC548 BC547 Typ 80 BC548 Collector cut-off current Min VCB=70V,IE=0 0.1 μA VCB=50V,IE=0 0.1 μA BC548 VCB=30V,IE=0 0.1 μA BC546 VCE=60V,IB=0 0.1 μA VCE=45V,IB=0 0.1 μA VCE=30V,IB=0 0.1 μA VEB=5V,IC=0 0.1 μA BC547 BC547 ICBO ICEO BC548 IEBO Emitter cut-off current hFE DC current gain * VCE=5V, IC=2mA Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA Base-emitter voltage VBE Collector output capacitance Cob fT Transition frequency 110 800 0.3 V 1.1 V 0.7 V VCE=5V, IC=10mA 0.75 V VCB=10V,IE=0, f=1MHz 4.5 pF VCE=5V, IC=2mA VCE=5V,IC=10mA, f=100MHz 0.58 150 MH CLASSIFICATION of hFE RANK A B C RANGE 110-220 200-450 420-800 B,Feb,2013