JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) TO-126 FEATURE power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μ A , IC=0 7 V Collector cut-off current ICBO VCB= 600V, IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB=7V, IC=0 100 μA hFE(1) VCE=20V, IC=20mA 10 hFE(2) VCE=10V, IC= 0.25mA 5 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Fall time tS Storage time tf 40 IC= 50mA, IB= 10mA 0.5 V IC= 100mA, IB= 20mA 0.6 V IC= 50mA, IB=10mA 1.2 V VCE=20V,IC=20mA f = 1MHz 5 MHz IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 μs 1.5 μs CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 A,Dec,2012