JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR (NPN) TO-126 FEATURES Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value BD433 BD435 BD437 22 32 45 BD433 BD435 BD437 Unit 1. EMITTER V VEBO Emitter-Base Voltage 22 32 45 5 IC Collector Current –Continuous 4 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ VCEO Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (Ta=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage 3. BASE V V unless otherwise Symbol Test V(BR)CBO IC=100μA,IE=0 VCE(SUS)(1) IC=100mA,IB=0 V(BR)EBO Collector cut-off current ICBO Collector cut-off current ICEO Emitter cut-off current IEBO DC current gain 2. COLLECTOR conditions Min BD433 BD435 BD437 BD433 BD435 BD437 IE=100μA,IC=0 VCB=22V,IE=0 VCB=32V,IE=0 VCB=45V,IE=0 VCE=22V,IE=0 VCE=32V,IE=0 VCE=45V,IE=0 hFE(1) hFE(2) (1) VCE=5V,IC=10mA hFE(3) (1) VCE=1V,IC=2A Base-emitter voltage VBE(1) VCE=1V,IC=2A Transition frequency fT VCE=1V,IC=250mA Max 85 BD433/BD435 BD437 BD433/BD435 BD437 BD433/BD435 BD437 BD433/BD435 BD437 Unit V V 5 BD433 BD435 BD437 BD433 BD435 BD437 VCE=1V,IC=500mA IC=2A,IB=0.2A Typ 22 32 45 22 32 45 VEB=5V,IE=0 (1) VCE(sat) (1) Collector-emitter saturation voltage specified) V 100 μA 100 μA 1 mA 375 40 30 50 40 0.5 0.6 1.1 1.2 3 V V MHz (1) Pulse test. B,Jan,2013