JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N65B N-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX 650 V 14Ω @ 10V TO-92 1A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching 1. GATE 2. DRAIN 3. SOURCE applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE High Current Rating z z Lower RDS(on) Lower Capacitance z z Lower Total Gate Charge z Tighter VSD Specifications Avalanche Energy Specified z MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 1 Pulsed Drain Current IDM 4 Single Pulsed Avalanche Energy (note1) EAS 5 mJ Power Dissipation PD 625 mW RθJA 200 ℃/W TJ, TSTG -55 ~+150 TL 260 Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds www.cj-elec.com 1 V A ℃ A,Oct,2014 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =1A 1.5 Zero gate voltage drain current IDSS VDS =600V, VGS =0V 100 µA Gate-body leakage curren (note2) IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =0.6A 14 Ω On characteristics (note2) 2.0 Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 4.2 Total gate charge Qg 5.0 Gate-source charge Qgs Gate-drain charge Qgd 2.0 Turn-on delay time (note3) td(on) 8 210 VDS =25V,VGS =0V,f =1MHz pF 28 Switching characteristics (note 3) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) VDS =480V,VGS =10V,ID =4.0A 2.7 VDD=300V, VGS=10V, 21 RG=18Ω, ID =1A 18 tf 10 nC ns 24 Notes : 1. L=10mH, IL=1 A, VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. www.cj-elec.com 2 A,Oct,2014 Typical Characteristics Transfer Characteristics Output Characteristics 1.6 0.5 VDS=10V Pulsed Pulsed 0.4 VGS= 6V、 8V、10V ID (A) 1.2 1.0 DRAIN CURRENT DRAIN CURRENT ID (A) 1.4 VGS=5.5V 0.8 0.6 0.3 0.2 Ta=100℃ Ta=25℃ VGS=5V 0.4 0.1 0.2 VGS=4.5V 0.0 0.0 0 20 10 DRAIN TO SOURCE VOLTAGE 30 VDS 0 2 (V) 4 VGS (V) RDS(ON)—— VGS RDS(ON) —— ID 60 20 Ta=25℃ Pulsed ID=0.6A Pulsed RDS(ON) ( Ω) 15 RDS(ON) ( Ω) 50 VGS=10V ON-RESISTANCE ON-RESISTANCE 8 6 GATE TO SOURCE VOLTAGE 10 5 40 Ta=100℃ Ta=25℃ 30 20 10 0 0.0 0 0.4 0.2 0.6 DRAIN CURRENT 0.8 ID 1.0 0 (A) 2 4 6 10 8 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 10 5 (V) 4 ID=250uA VTH 1 Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed 0.1 0.01 1E-3 0.0 0.4 0.8 1.2 1.6 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 2.0 3 2 1 0 25 2.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A,Oct,2014 723DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 b c D D1 E e e1 L h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 726XJJHVWHG3DG/D\RXW A,Oct,2014 727DSHDQG5HHO ZZZFMHOHFFRP A,Oct,2014