JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2333 SOT-23 P-Channel MOSFET DESCRIPTION The CJ2333 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.This device is suitable for use in PWM,load switching and general purpose applications. 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: S33 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Value Unit -12 V VGS ±8 V Continuous Drain Current ID -6 a A Pulsed Drain Current (t=300µs) IDM -20 Power Dissipation Thermal Resistance from Junction to Ambient PD RθJA A b 0.35 a 1.1 W W 357 b ℃/W 113 a ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side. b. Device mounted on no heat sink. A-2,Dec,2012 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-12V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±0.1 µA -1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) Forward tranconductance (note 1) VGS(th) RDS(on) gFS VDS =VGS, ID =-250µA -12 V -0.4 VGS =-4.5V, ID =-5A 28 VGS =-3.7V, ID =-4.6A 32 VGS =-2.5V, ID =-4.3A 40 VGS =-1.8V, ID =-1A 63 VGS =-1.5V, ID =-0.5A 150 VDS =-5V, ID =-5A mΩ 18 S 1275 pF 255 pF 236 pF Dynamic characteristics (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDS =-6V,VGS =0V,f =1MHz f =1MHz 1.9 14 19 Ω 21 nC 2.3 nC Qgd 3.6 nC td(on) 26 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A 24 40 ns RL=6Ω,RGEN=1Ω 45 70 ns 20 35 ns -1.4 A -20 A -1.2 V 24 48 ns 8 16 nC tr td(off) VDS =-6V,VGS =-4.5V,ID=-5A tf Source-Drain Diode characteristics Diode forward current IS Diode pulsed forward current ISM Diode Forward voltage (note 1) VDS Diode reverse recovery time (note 2) trr Diode reverse recovery charge (note 2) Qrr Notes : TC=25℃ VGS =0V, IS=-4A IF=-4A,dI/dt=100A/µs 1. Pulse test; pulse width≤300μs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. A-2,Dec,2012 Typical Characteristics CJ2333 Output Characteristics Transfer Characteristics -20 -1.5 VGS= -5V、 -4.5V、 -3.5V、2.5V -1.2 (A) -16 -8 DRAIN CURRENT ID -12 DRAIN CURRENT ID (A) VGS=-2V VGS=-1.5V -4 -0 -0.9 Ta=25℃ Ta=100℃ -0.6 -0.3 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE -4 VDS -0.0 -0.0 -5 (V) -0.4 -0.8 -1.2 -1.6 GATE TO SOURCE VOLTAGE VGS RDS(ON) —— VGS RDS(ON) —— ID 200 200 Ta=25℃ Ta=25℃ Pulsed Pulsed RDS(ON) 120 VGS=-1.5V 80 VGS=-1.8V ON-RESISTANCE RDS(ON) (mΩ) 160 (mΩ) 160 ON-RESISTANCE -2.0 (V) VGS=-2.5V 40 0 120 80 ID=-5A ID=-4.3A 40 VGS=-3.7V -0 -1 -2 VGS=-4.5V -3 -4 DRAIN CURRENT -5 ID -6 0 -7 -0 (A) -1 -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) Threshold Voltage IS —— VSD -10 -1.0 Ta=25℃ (V) Pulsed -0.8 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) -1 -0.1 -0.01 -1E-3 -0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE -1.2 VSD (V) -1.6 ID=-250uA -0.6 -0.4 -0.2 -0.0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) A-2,Dec,2012