JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V(D-S) MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc MARKING: TS1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -8.0 Gate-Source Voltage VGS ±8.0 Continuous Drain Current ID -1.4 Pulsed Drain Current (tp=10µs) IDM -3.0 Continuous Source-Drain Diode Current IS -0.46 Power Dissipation PD 0.29 W RθJA 430 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient V A ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ -8.0 -20 Max Unit OFF CHARACTERISSTICS Drain-Source Breakdown Voltage VDSS VGS = 0V, ID =-250µA V Gate-Source Leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =-6.4V, VGS =0V -1.0 µA VGS(th) VDS =VGS, ID =-250µA OFF CHARACTERISSTICS (note 1) Gate-Source Threshold Voltage Drain-Source On-State Resistance RDS(on) -0.45 -0.7 V VGS =-4.5V, ID =-1.0A 100 VGS =-2.5V, ID =-0.5A 140 VGS =-1.8V, ID =-0.3A 210 mΩ CHARGES AND CAPACITANCES (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 640 VDS =-8.0V,VGS =0V,f =1MHz pF 120 82 SWITCHING CHARACTERISSTICS (note 2,3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) 6.2 VGS=-4.5V,VDD=-4.0V, 15 ID =-1.0A,RG=6.2Ω 26 tf ns 18 Drain-source Body diode characteristics Forward Diode Voltage VSD VGS =0V,IS=-0.3A -0.62 -1.2 V Notes : 1. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. 2. Switching characteristics are independent of operating junction temperatures. 3. These parameters have no way to verify. A,Dec,2010 Typical Characteristics Output Characteristics -10 Ta=25℃ CJ2101 Transfer Characteristics -10 Ta=25℃ VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Pulsed Pulsed -2.2V (A) -8 (A) -8 ID ID -2.0V -6 -1.8V -4 -1.6V DRAIN CURRENT DRAIN CURRENT -6 -4 -1.4V -2 -2 -1.2V VGS=-1.0V -0 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 200 VDS -5 (V) ID -2 -3 RDS(ON) —— 120 VGS -4 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed (mΩ) (mΩ) 100 RDS(ON) 150 VGS=-2.5V 100 VGS=-4.5V 50 ON-RESISTANCE RDS(ON) -1 GATE TO SOURCE VOLTAGE VGS=-1.8V ON-RESISTANCE -0 ID=-1.0A 80 ID=-0.5A ID=-0.3A 60 40 -0 -2 -4 -6 DRAIN CURRENT -8 ID -10 (A) -0 -6 GATE TO SOURCE VOLTAGE -12 VGS -18 (V) IS —— VSD -4 SOURCE CURRENT IS (A) -1 -0.3 -0.1 -0.03 Ta=25℃ Pulsed -0.01 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE -1.2 -1.4 VSD (V) A,Dec,2010