IS31LT3117 53V, 350MA, 4-CHANNEL CONSTANT CURRENT REGULATOR WITH OTP Preliminary Information March 2015 GENERAL DESCRIPTION FEATURES The IS31LT3117 is a 4-channel, linear regulated, constant current LED driver which can provide 4 equal currents outputs of up to 350mA per channel to drive high brightness LEDs over an input voltage range of 6V to 53V, while maintaining an output leakage current of less than 1µA. The output current is easily programmed using a single, tiny external resistor. The outputs of the IS31LT3117 can be connected in parallel to allow greater than 350mA output current. The IS31LT3117 also features a PWM input to enable simple dimming control using a digital control signal. The recommended frequency range of the PWM signal is 4kHz ~ 100kHz. The IS31LT3117 provides a unique over temperature protection scheme. A hard shutdown which turns off all LED currents occurs if the die junction temperature exceeds the maximum value of 160°C. However, as the die junction temperature rises up to over 130°C (Typ.), the output current will begin to roll off at a rate of -2.22%/°C (Typ.). If the die temperature continues to rise above the hard shutdown temperature threshold, the LED currents will drop to zero. When temperature returns to 140°C (Typ.) or below, the hard shutdown protection is released and the chip will function again. 6V to 53V input supply voltage range Up to 1.4A total output current Over temperature protections Thermal current regulation above 130°C ±3% output current matching between channels PWM dimming and shutdown control input Optional 2.5V output to drive external standoff BJTs Very few external components APPLICATIONS Industrial LED lighting Low EMI lighting applications Low-side constant current regulator The IS31LT3117 also has an optional 2.5V reference voltage output which is able to supply up to 10mA (typ.) output current. This voltage may be used to drive the base of the external BJTs for higher current applications in such case, driving for a wide varying input voltage is needed. The IS31LT3117 is offered in eTSSOP-16 package with operating temperature range of -40°C to +125°C. TYPICAL APPLICATION CIRCUIT Figure 1 IS31LT3117 Directly Driving 4 LED Strings Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 1 IS31LT3117 Figure 2 IS31LT3117 With Optional 2.5V Output Driving 4 External Standoff BJTs Note 1: The 33µF output capacitor should be placed as close to the LED array as possible in order to minimize the parasitic inductor effect due to the output wiring. Note 2: The resistor RSET should be place as close to ISET and GND pins as possible. Note 3: If you want less than four channels, the unused channel should be connected to GND. Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 2 IS31LT3117 PIN CONFIGURATION Package Pin Configuration (Top View) eTSSOP-16 PIN DESCRIPTION No. Pin Description 1 PWM PWM control pin. (PWM=high, enable. PWM=low for 3.5ms, disable) 2, 5 PGND Power ground. 3 VCC Voltage supply input (6V~53V). 4,7,11,13,15 NC No connection. 6 GND Ground. 8 ISET A resistor from this pin to ground will set all the channel sink currents to the same value. 9 VREF 2.5V reference output capable of sourcing 10mA (Typ.). A 1µF capacitor must be connected from this pin to ground. 10,12,14,16 VLED4~VLED1 Current source outputs. Each channel should be connected to GND if it is not used. Thermal Pad Connect to ground. Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 3 IS31LT3117 ORDERING INFORMATION Industrial Range: -40°C to +125°C Order Part No. Package QTY IS31LT3117-ZLS4-TR IS31LT3117-ZLS4 eTSSOP-16, Lead-free 2500/Reel 96/Tube Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 4 IS31LT3117 ABSOLUTE MAXIMUM RATINGS (NOTE 4) VCC pin to GND Voltage at PWM and VLEDx pins Voltage at ISET pin Current at VREF pin Junction temperature, TJ Storage temperature range, TSTG Operating temperature range, TA Power dissipation, PD(MAX) (Note 5) Thermal resistance, junction to ambient, still air, θJA ESD (HBM) ESD (CDM) -0.3V ~ +56V -0.3V ~ +56V -0.3V ~ +6.0V 10mA -40°C ~ +160°C -65°C ~ +150°C -40°C ~ +125°C 2.5W 39.9°C/W All pins pass 2kV, except all ground pin pass 1.5kV All pins pass 750V, except Pin 1 passes 100V Note 4: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 5: Detail information please refers to package thermal de-rating curve on Page 12. ELECTRICAL CHARACTERISTICS Valid are at VCC = 12V, TA = TJ = -40°C ~ +125°C, typical value at 25°C, unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit VCC Supply voltage range 6.0 53 V RSET The ISET resistance 5.8 203 kΩ ISINK Output current per channel 367.5 mA IIN Quiescent Input supply current ISD Shutdown input current tSD The time of PWM pin keeping low to shutdown the IC RSET=5.8kΩ, PWM=High VVLEDx=1V, TA = 25°C 332.5 350 RSET=5.8kΩ, PWM=High 13.8 RSET=203kΩ, PWM=High 6.3 PWM = Low, VCC=12V 90 3.5 mA µA ms fPWM The PWM dimming frequency VCC=12V VHR Recommended VLED output voltage headroom ISINK=350mA (Note 6) ILEAKAGE Leakage current per channel PWM=Low, VVLEDx=53V tRISE Output current rise time RSET=5.8kΩ, PWM=20kHz, current rise from 10%~90% (Note 7) 300 ns tFALL Output current fall time RSET=5.8kΩ, PWM=20kHz, current fall down from 90%~10% (Note 7) 200 ns VISET ISET pin output voltage PWM pin input logic high voltage VPWM rising VPWML PWM pin input logic low voltage VPWM falling 100 0.8 kHz V 1 1.16 VPWMH Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 4 1.27 1.38 1.4 µA V V 0.4 V 5 IS31LT3117 ELECTRICAL CHARACTERISTICS (CONTINUE) Valid are at VCC = 12V, TA = TJ = -40°C ~ +125°C, typical value at 25°C, unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit TRO Thermal roll off threshold (Note 7) 130 °C TSD Thermal shutdown threshold Temperature rising (Note 7) 160 °C TSD-HYS Thermal shutdown hysteresis Temperature falling (Note 7) 20 °C ∆ISINK/ISINK Current matching between Channels RSET=5.8kΩ, PWM=High VVLEDx=1V VREF Reference voltage output -3 2.32 2.5 3 % 2.76 V Note 6: It is a recommended value to ensure a better line regulation of 350mA output current. Note 7: Guarantee by design. Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 6 IS31LT3117 TYPICAL PERFORMANCE CHARACTERISTICS 1.30 9.0 TA = 25ºC VCC = 12V 1.28 8.8 8.7 8.6 VISET (V) Supply Current (mA) 8.9 8.5 8.4 1.26 1.24 8.3 8.2 1.22 8.1 8.0 6 12 18 24 30 36 42 48 1.20 -40 54 -25 -10 5 Supply Voltage (V) Figure 3 35 50 65 80 95 110 125 Temperature (°C) Supply Current vs. Supply Voltage Figure 4 12 VISET vs. Temperature 2.60 TA = 25ºC VCC = 12V 2.58 11 2.56 10 VREF (V) Supply Current (mA) 20 9 8 2.52 2.50 7 6 -40 2.54 2.48 2.46 -25 -10 5 20 35 50 65 80 95 110 125 6 12 18 36 42 54 48 Supply Voltage (V) Temperature (°C) Figure 5 30 24 Figure 6 Supply Current vs. Temperature VREF vs. Supply Voltage 2.70 1.30 VCC = 12V TA = 25ºC 2.65 1.28 VREF (V) VISET (V) 2.60 1.26 1.24 2.55 2.50 1.22 1.20 2.45 6 12 18 24 30 36 42 48 54 60 2.40 -40 -25 -10 5 VISET vs. Supply Voltage Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 35 50 65 80 95 110 125 Temperature (°C) Supply Voltage (V) Figure 7 20 Figure 8 VREF vs. Temperature 7 IS31LT3117 350 400 VCC = 12V 300 VCC = 12V TA = 25ºC RISET = 5.8kΩ 300 250 200 150 RISET = 20kΩ Output Current (mA) Output Current (mA) 350 100 0 0 200 400 600 800 200 150 100 50 RISET = 200kΩ 50 250 0 1000 1200 1400 1600 1800 2000 0 50 100 VVLEDX (mV) Figure 9 200 RISET (kΩ) Output Current vs. VVLEDX Figure 10 400 Output Current vs. RSET 400 VCC = 12V RISET = 5.8kΩ fPWM = 4kHz,20kHz,100kHz 380 Output Current (mA) 350 Output Current (mA) 150 300 250 200 150 100 VCC = 12V 3 LEDs 360 340 320 300 280 260 240 50 0 220 0 20 40 60 80 100 200 -40 -25 -10 PWM Duty Cycle (%) Figure 11 Figure 13 Output Current vs. PWM Duty Cycle Output Current vs. VPWM on Rising Time Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 12 Figure 14 Output Current vs. Temperature Output Current vs. VPWM on Falling Time 8 IS31LT3117 FUNCTIONAL BLOCK DIAGRAM Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 9 IS31LT3117 APPLICATION INFORMATION FUNCTIONAL DESCRIPTION IS31LT3117 is a linear current regulator designed to drive high brightness LEDs. The device integrates 4 channels capable of driving up to 350mA in each channel and operates over a supply voltage range of 6V to 53V. Output current is easily programmed by using a single resistor. The IS31LT3117 incorporates a special thermal regulation protection feature which prevents the die temperature from exceeding the maximum rated junction temperature of 160°C. IS31LT3117 features a PWM/enable input which can be used to realize PWM dimming of the LEDs. In addition, the enable input can be used to put the device into a low power consumption shutdown mode. In shutdown, the device consumes only 80µA of supply current. VCC The VCC input pin provides power to the internal circuitry of the entire chip. The device supply current will vary with the output current setting due to the internal reference currents generated for each channel. The nominal supply current is 11.5mA (RSET=5.8kΩ) during operation. ISET The output current for the IS31LT3117 is set by connecting a resistor from the ISET pin to GND. An internal 1.27V reference voltage source will supply a current to the external current setting resistor. The reference current is internally amplified by a gain of 1600 to each of the 4 outputs. In order to have an accurate current output, this current setting resistor must be mounted as close to ISET and AGND pins as possible. PWM When the PWM input pin is at low state (VPWM < 0.4V) and stays low for more than 3.5ms, the IS31LT3117 enters a low power consumption mode with all of the outputs turned OFF. In this mode, the IS31LT3117 consumes only 80µA of supply current. When the PWM input pin is at high state (VPWM > 1.4V), the IS31LT3117 will enters in operation mode to resume normal operation and all outputs are turned ON. A PWM input signal to the PWM pin can be used for HBLED dimming control. The recommended frequency range of PWM signal is 4kHz ~ 100kHz. GND Signal ground current return pin. PGND Power ground current return pin. This pin should be connected to as large as possible of a copper pad on Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 the PCB to allow the best possible thermal performance of the circuit. VLEDx Constant current regulator channel. Each of the 4 input pins are capable of sinking up to 350mA of current with a headroom voltage VVLEDx of 0.8V (Min.). It is recommended to maintain above a 0.8V VVLEDx to ensure a better line regulation of 350mA output current. OUTPUT CURRENT The maximum sink current of all four channels are set by a single resistor (RSET) connected from the ISET pin to ground. The maximum possible current is 350mA per channel. However, any of the four channels can be connected in parallel to allow a larger current output. The channel sink current can be calculated by the following Equation (1): I SINKx 1600 VISET RSET (1) Where VISET = 1.27V (Typ.) RSET need to be chosen 1% accuracy resistor with enough power tolerance and good temperature characteristic to ensure stable output current. The following table shows examples of ISINKX values for various RSET settings: ISINKx (mA) RSET (kΩ) 10 203 100 20.3 350 5.8 If less than 4 channels are required for a particular application, it is recommended to combine channels together to drive the LEDs. This will help to reduce the individual internal bias currents and, thus, the overall power consumption and heat dissipation of the device. For example, it can be configured to combine two or four channels to one channel to drive two or one string of LEDs. If only three channels are used, the unused channel should be connected to GND. VREF When time of sinking a high current from a voltage source increases, the headroom voltage (VVLEDx) on the current sinks will also increase. This will cause an increase in power dissipation at the current sink, which may result in an increase of the package temperature. VVLEDx VCC VLEDS (2) Where VLEDS = total LED VF for the channel. 10 IS31LT3117 To address this thermal condition, the IS31LT3117 integrates a 2.5V reference output which can be used to drive the base of an external BJT. This turns on the BJT and effectively clamps the voltage across the IS31LT3117’s output driver to approximately 0.8V. The power dissipation is then shared between the IC and the standoff transistor. The VREF pin can source up to 10mA of current to drive 4 external BJT’s, one for each channel. OPERATION WITH EXTERNAL BJTS In most of the applications, the largest power dissipation will be caused by the current regulator. The thermal dissipation is proportional to the headroom voltage (VVLEDx) and the sink current flowing through it. When VCC is much higher than the VLEDS or ISINKx is large, the power dissipation of the IS31LT3117 will be high. This condition may easily trigger the over temperature protection (OTP). Using external standoff BJTs can transfer the unwanted thermal power from the current regulator channel to the BJTs (Figure 15). R5 can transfer the unwanted thermal power from Q5 to itself. Assume the current thought Q5 is IQ5, I Q5 4 I SINKx X 1 1 (5) The power on R5 can be given by Equation (6): PR 5 R5 I Q 5 2 (6) The power on Q5 can be given by Equation (7): PQ 5 VCC V REF VbeQ 5 R5 I Q 5 I Q 5 (7) An appropriate value of R5 should be chosen to ensure the power dissipation on Q5 won’t exceed the power rating of Q5. If the sum of total power of PR5 and PQ5 is low enough, R5 can be shorted and all power dissipates on Q5. The power on Qx can be calculated by Equation (8): PQx VCC V LEDS VVLEDx I SINKx (8) An appropriate value of Rx should be chosen to ensure the power dissipation on Qx won’t exceed the power rating of Qx. All of these BJTs should be set to operate in the linear region to ensure normal operation. Figure 15 For example, assume ISINKx =350mA, VCC=12V, VLEDS of three LEDs is 9.6V, the minimum of the selected BJT is 200, the maximum base-emitter voltage of Q5 and Qx are all 0.7V, The minimum VREF pin output voltage is 2.4V, The Vbe of BJT is approximately 0.7V. Rx can be calculated from Equation (4): IS31LT3117 with external BJTs With the external BJTs, the voltage across VLEDx to GND is given by Equation (3): Rx V REF VbeQ 5 VbeQx V HD I SINKx 1 VVLEDx VREF VbeQ 5 R x I beQx VbeQx VREF VbeQ 5 R x (3) I SINKx VbeQx 1 Where VbeQ5 and VbeQx are the base-emitter voltage of Q5 and Qx, IbeQx is the base-emitter current of Qx. is the gain of BJT. In order to ensure the normal operation, the voltage across VLEDx should not be lower than the minimum headroom voltage, minimum VHD (0.8V). So, VREF VbeQ 5 V REF VbeQ 5 V beQ x I SINKx 1 V HD 2 .4 0 .7 0 .7 0 .8 115 0.35 200 1 By Equation (5), I Q5 Therefore, I R x SINKx VbeQx VHD 1 Therefore, Rx 4 0.35 I SINKx 4 7 mA 200 1 X 1 1 PS PQ 5 PR 5 VCC (V REF VbeQ 5 ) I Q 5 12 2.4 0.7 0.007 0.0721W The PS is pretty low. So R5 can be eliminated. (4) Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 And, 11 IS31LT3117 12 9.6 0.8 0.35 0.56W LED BRIGHTNESS CONTROL IS31LT3117 allows user to control the LED intensity in two ways. First, the current sink level can be adjusted by changing the external resistance, or by using an external current source on the ISET pin to provide the reference current. However, the spectral output of the LED may shift slightly at different current levels, thus adversely affecting the color temperature of the light output. IS31LT3117 also provides a PWM input pin to control the ON/OFF state of all four channels. Using a PWM input signal of different duty cycle allows the average LED current to be adjusted linearly and proportional to the duty cycle, while maintaining the same peak current through the LEDs. In this way, the light intensity can be reduced without affecting the spectral content of the light, effectively dimming the light without changing the color temperature. TEMPERATURE REGULATION IS31LT3117 integrates a thermal regulation block which is designed to protect the IC from overheating when dissipating high power. If the junction temperature of the device exceeds 130°C (Typ.), the output current in each channel will begin to reduce linearly at a rate of -2.22% per °C and hence reduce the power dissipation of the IC. If the junction temperature of the IC continues to increase to the point where the thermal shutdown temperature of 160°C is reached or exceeded, the IC will automatically go into shutdown mode in which all of the four channel’s sink currents are reduced to a minimum. If the junction temperature of the device is above 130°C (Typ.), and if thermal shutdown is not initiated, the output current will continue to regulate based on the junction temperature. In the temperature range 130°C<TJ<160°C, the output current will regulate based on the following Equation (9): 35 2 T I J OUTMAX 9 90 I OUT (9) When the junction temperature of IS31LT3117 exceeds 160°C (Typ.), the IC will switch all outputs and internal output bias currents are turned off. This reduces the power dissipation of the IC to the minimum, and, under normal conditions, the IC will begin to cool down. After thermal shutdown is initiated, the temperature of the IC must drop below 140°C (Typ.) before returning to normal operation. If thermal shutdown is not initiated, the output current will continue to regulate based on the junction temperature. Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 The plot below illustrates the simulated output current in the case of increasing temperature and, if thermal shutdown is initiated or the ambient temperature decreases, as a function of percentage of output current programmed value. Temperature Rise/fall 100 Rising temperature 90 Falling temperature 80 ISINK current rate (%) PQx VCC V LEDS VVLEDx I SINKx 70 60 Thermal shutdown 50 40 30 Hysteresis 20 10 0 110 120 130 140 150 160 170 Die temperature(oC) Figure 16 Temperature regulation Note that because of the test environment, RθJA and test method, the output current will be a little different from that of Figure 16. It is recommended a system test to be performed to confirm the details of current changing over the entire operation temperature range. THERMAL DISSIPATION The package thermal resistance, RθJA, determines the amount of heat that can pass from the silicon die to the surrounding ambient environment. The RθJA is a measure of the temperature rise created by power dissipation and is usually measured in degree Celsius per watt (°C/W). The junction temperature,TJ, can be calculated by the rise of the silicon temperature, ∆T, the power dissipation, PD, and the package thermal resistance, RθJA, as in Equation (10): 4 PD VCC I IN VVLEDx I OUTx x 1 (10) and, TJ TA T TA PD JA (11) Where VCC is the supply voltage, VVLEDx is the voltage across VLEDx to GND and TA is the ambient temperature. When operating the device at high ambient temperatures, or when driving high load current, care must be taken to avoid exceeding the package power dissipation limits. The maximum power dissipation can be calculated using the following Equation (12): PD ( MAX ) 125C 25C JA (12) 12 IS31LT3117 So, PD ( MAX ) 125C 25C 2.5W 39.9C / W BJTs should be used to withstand unwanted dissipation. Figure 17, shows the power derating of the IS31LT3117 on a JEDEC boards (in accordance with JESD 51-5 and JESD 51-7) standing in still air. 3 Power Dissipation (W) eTSSOP-16 For example, the maximum VCC is 24VDC, the minimum VVLEDx is 22V, the highest ambient temperature is 40°C, and the IOUTx is 300mA. The power dissipation and the junction temperature can be calculated as: PD 24 0.0115 24 22 0.3 4 2.676W 2.5 TJ 40 2.676 39 .9 146 .8C 2 TJ 125 C 1.5 Hence this configuration needs external BJTs. 1 0.5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 17 Dissipation curve When the junction temperature, TJ, exceeds the absolute maximum temperature (Typ.125°C), external Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 When designing the Printed Circuit Board (PCB) layout, double-sided PCB with a copper area of a few square millimeters on each side of the board directly under the IS31LT3117 (eTSSOP-16 package) should be used. Multiple thermal vias will help to conduct heat from the exposed pad of the IS31LT3117 to the copper on each side of the board. The thermal resistance can be further reduced by using a metal substrate or by adding a heatsink. 13 IS31LT3117 CLASSIFICATION REFLOW PROFILES Profile Feature Pb-Free Assembly Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) 150°C 200°C 60-120 seconds Average ramp-up rate (Tsmax to Tp) 3°C/second max. Liquidous temperature (TL) Time at liquidous (tL) 217°C 60-150 seconds Peak package body temperature (Tp)* Max 260°C Time (tp)** within 5°C of the specified classification temperature (Tc) Max 30 seconds Average ramp-down rate (Tp to Tsmax) 6°C/second max. Time 25°C to peak temperature Figure 18 8 minutes max. Classification Profile Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 14 IS31LT3117 PACKAGE INFORMATION eTSSOP-16 Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 15 IS31LT3117 LAND PATTERN Note: 1. Land pattern complies to IPC-7351. 2. All dimensions in MM. Integrated Silicon Solution, Inc. – www.issi.com Rev.0D, 03/10/2015 16