2SK2800 Silicon N Channel MOS FET High Speed Power Switching REJ03G1035-0900 (Previous: ADE-208-513G) Rev.9.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.9.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Symbol VDSS VGSS ID Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.9.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max — — ±10 10 2.5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10V ID = 20 A, VGS = 10V Note4 ID = 20 A, VGS = 4 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 20 A, RL = 1.5 Ω, VGS = 10 V IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/ dt =50 A/µs 2SK2800 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 300 75 50 25 50 40 50 100 150 30 DC 10 Op er 3 = 10 1 ms (1 sh ati on ot) (T c= Operation in this area is limited by RDS(on) 0.1 0.1 200 25 °C ) 3 1 30 10 100 Typical Output Characteristics Typical Transfer Characteristics 50 10 V 6V 4.5 V 4V Pulse Test 3.5 V 20 10 2 4 6 8 VDS = 10 V Pulse Test 40 30 Tc = 75°C 25°C 20 –25°C 10 0 10 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1.6 1.2 ID = 50 A 0.8 0.4 20 A 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.9.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 2.0 0 0.3 Drain to Source Voltage VDS (V) 30 0 Ta = 25°C Case Temperature TC (°C) VGS = 3 V Drain to Source Saturation Voltage VDS (on) (V) PW 10 µs 0µ s 1m s 10 100 0.3 0 Drain Current ID (A) 1000 Drain Current ID (A) Channel Dissipation Pch (W) 100 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 0.02 10 V 0.01 0.005 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2800 0.05 Pulse Test 0.04 ID = 20 A 0.03 10 A VGS = 4 V 0.02 50 A 10, 20 A 10 V 0.01 0 –40 0 40 80 120 160 Tc = –25°C 50 25°C 20 75°C 10 5 2 VDS = 10 V Pulse Test 1 1 10 5 2 20 50 Case Temperature TC (°C) Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 5000 1000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 200 100 50 20 0.3 1 3 10 30 Ciss 1000 500 Coss 200 Crss 100 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 2000 50 0 100 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 10 V 25 V 50 V 12 VGS VDS 40 8 20 4 VDD = 50 V 25 V 10 V 0 8 16 24 32 Gate Charge Qg (nc) Rev.9.00 Sep 07, 2005 page 4 of 7 0 40 1000 Switching Time t (ns) 80 60 20 ID = 40 A Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Switching Characteristics 100 300 td(off) 100 tf tr 30 td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 2SK2800 40 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 50 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 30 5V VGS = 0, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP= 40 A VDD = 25 V duty < 1 % Rg > 50 Ω 160 120 80 40 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.5°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.9.00 Sep 07, 2005 page 5 of 7 VDD 2SK2800 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.9.00 Sep 07, 2005 page 6 of 7 tr 90% td(off) tf 2SK2800 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK2800-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.9.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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