RENESAS 2SK3159

2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1084-0400
Rev.4.00
May 15, 2006
Features
• Low on-resistance
RDS = 23 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.4.00 May 15, 2006 page 1 of 7
2
3
S
2SK3159
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
Ratings
150
±20
50
200
50
50
187
125
150
–55 to +150
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Rev.4.00 May 15, 2006 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
150
±20
—
—
1.0
—
—
27
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
23
28
45
4000
1650
590
30
280
830
450
0.95
200
Max
—
—
±10
10
2.5
30
42
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 VNote4
ID = 25 A, VGS = 4 V Note4
ID = 25 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/ dt = 50 A/µs
2SK3159
Main Characteristics
Maximum Safe Operation Area
120
50
100
150
Operation in
this area is
limited by RDS (on)
0.2
0.1 Ta = 25°C
0.05
0.1 0.3 1
200
10 30 100 300 1000
3
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
100
10 V
Pulse Test
VDS = 10 V
Pulse Test
4V
40
3V
3.5 V
Drain Current ID (A)
Drain Current ID (A)
2
1
0.5
30
20
2.5 V
10
80
60
40
Tc = 75°C
20
25°C
VGS = 2 V
0
2
4
6
8
–25°C
0
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
2.0
Pulse Test
1.6
ID = 50 A
1.2
0.8
20 A
0.4
0
10 A
0
4
8
12
16
Gate to Source Voltage VGS (V)
Rev.4.00 May 15, 2006 page 3 of 7
20
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
0
)
ot
Sh
0
0
(1
40
D
C
(T O
c pe
=
25 rati
°C on
)
20
10
5
s
m
80
1
10 0 µ
0 s
µ
1
m s
s
10
Drain Current ID (A)
500
200
100
50
=
160
PW
Channel Dissipation Pch (W)
Power vs. Temperature Derating
100
50
VGS = 4 V
20
10 V
10
5
2
Pulse Test
1
1
2
5
10
20
50 100 200
Drain Current ID (A)
Pulse Test
80
10, 20 A
ID = 50 A
60
VGS = 4 V
40
10, 20 A
50 A
20
10 V
0
–50
0
50
100
150
200
20
25°C
10
5
75°C
2
VDS = 10 V
Pulse Test
1
0.5
0.1
0.3
1
10
3
30
100
Capacitance C (pF)
10000
Ciss
3000
1000
Coss
300
20
Crss
VGS = 0
f = 1 MHz
100
0.3
1
3
10
30
100
0
10
20
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 50 A
16
160
VDD = 100 V
50 V
25 V
12
VGS
VDS
8
40
0
0
Tc = –25°C
30000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
50
80
50
Typical Capacitance vs.
Drain to Source Voltage
100
120
100
Body to Drain Diode Reverse
Recovery Time
200
200
200
Drain Current ID (A)
500
10
0.1
500
Case Temperature Tc (°C)
4
VDD = 100 V
50 V
25 V
80
160
240
320
Gate Charge Qg (nc)
Rev.4.00 May 15, 2006 page 4 of 7
0
400
50
5000
2000
Switching Time t (ns)
Reverse Recovery Time trr (ns)
Forward Transfer Admittance yfs (S)
100
1000
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
2SK3159
td(off)
1000
500
200
tf
tr
100
50
20
10
0.1 0.2
td(on)
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
0.5 1
2
5
10 20
Drain Current ID (A)
50
2SK3159
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
50
40
30
10 V
20
VGS = 0, –5 V
5V
10
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
250
IAP = 50 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
200
150
100
50
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
0.05
0.02
0.03
0.0
1
1s
t
ho
D=
PDM
pu
lse
0.01
10 µ
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
D.U.T
V(BR)DSS
IAP
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.4.00 May 15, 2006 page 5 of 7
VDD
2SK3159
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.4.00 May 15, 2006 page 6 of 7
10%
tr
90%
td(off)
tf
2SK3159
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
2SK3159-E
Quantity
360 pcs
Shipping Container
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 May 15, 2006 page 7 of 7
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