2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 1. Gate 2. Drain 3. Source S 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 120 ±20 10 40 10 10 8.5 25 150 –55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 120 ±20 — — 1.0 — — 5.5 — — — — — — — — — Typ — — — — — 100 130 9.5 580 240 130 11 55 140 80 0.9 100 Max — — ±10 10 2.5 130 170 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 120 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 VNote4 ID = 5 A, VGS = 4 V Note4 ID = 5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 diF/ dt = 50 A/ µs 2SK3140 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Drain Current ID (A) 30 20 10 PW 10 DC 3 1m s =1 0m s( Op era 1s tio 1 0µ µs n( Tc s ho t) =2 0.3 Operation in this area is 0.1 limited by RDS(on) 5°C ) 0.03 20 Ta = 25°C 0.01 0 Drain Current ID (A) 10 10 30 50 100 150 1 200 10 5 2 20 50 100 200 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 V 4V Pulse Test 6V 16 Drain Current ID (A) Channel Dissipation Pch (W) 40 3.5 V 12 8 3V 4 VGS GS =2.5 V 8 VDS = 10 V Pulse Test 6 4 2 Tc = 75°C –25°C 25°C 2 4 6 8 1 2 3 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 2 ID = 15 A 10 A 1 5A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) 0 5 500 Pulse Test 200 VGS = 4 V 100 10 V 50 20 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK3140 500 Pulse Test 400 2A 5A 300 10 A 200 VGS = 4 V 2, 5 A 10 A 100 10 V 0 –40 0 40 80 120 160 25°C Tc = –25°C 10 75°C 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / µs VGS = 0, Ta = 25°C 2000 Capacitance C (pF) 500 200 100 50 20 1000 Ciss 500 200 Coss 100 50 Crss VGS = 0 f = 1 MHz 20 200 10 0.3 1 3 10 30 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 20 A 160 16 VDD = 100 V 50 V 25 V 120 12 VGS 80 8 VDS 40 0 0 100 4 VDD = 100 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 40 500 300 Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 20 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 50 td(off) 100 tf tr 30 td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 Drain Current ID (A) 30 100 2SK3140 8 6 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 10 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 4 VGS = 0, –5 V 5V 2 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 10 IAP = 10 A VDD = 50 V duty < 0.1 % Rg > 50 Ω 8 6 4 2 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 5.0°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 µ t ho D= lse PW T PW pu T 1s 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit Avalanche Waveform L EAR= VDS 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.2.00 Sep 07, 2005 page 5 of 7 VDD 2SK3140 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 6 of 7 tr 90% td(off) tf 2SK3140 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK3152 Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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