HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0200 Rev.2.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.2.00 Sep 26, 2005 page 1 of 7 Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C HAT2173H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.2.00 Sep 26, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ±20 — — 4.0 — — 27 — — — — — — — — — Typ — — — — — 12 13 45 4350 520 150 0.5 61 23 14.5 20 15 Max — — ±10 1 6.0 15 17.5 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns — — — — 37 5.7 0.82 55 — — 1.07 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, ID = 20 mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 8 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 50 V,VGS = 10 V, ID = 25 A VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0, diF/ dt = 100 A/ µs HAT2173H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 100 50 100 150 Case Temperature 10 30 n 1 Operation in this area is 0.1 limited by RDS(on) 0.01 0.1 0.3 200 6.2 V 5.8 V 20 5.6 V 10 5.4 V 2 4 6 8 Drain to Source Voltage 300 ID = 50 A 200 20 A 100 10 A Gate to Source Voltage Rev.2.00 Sep 26, 2005 page 3 of 7 Tc = 75°C -25°C 10 0 16 20 VGS (V) 2 4 6 8 Gate to Source Voltage 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) 400 12 25°C 20 VDS (V) Pulse Test 8 40 30 10 500 4 VDS (V) VDS = 10 V Pulse Test Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 500 5.2 V VGS = 5.0 V 0 100 50 Pulse Test 6.0 V 30 3 Typical Transfer Characteristics ID (A) 40 10 V 8V 1 Drain to Source Voltage Tc (°C) Drain Current 50 ID (A) 10 µs tio Typical Output Characteristics Drain Current 10 Tc = 25°C 1 shot Pulse 0 Drain to Source Voltage VDS(on) (mV) 10 PW 1 m 0 µs s DC = 1 Op 0 m er s a 100 Pulse Test 50 20 VGS = 8 V 10 10 V 5 2 1 1 3 10 Drain Current 30 ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2173H 50 Pulse Test 40 ID = 5 A, 10 A, 20 A 30 20 VGS = 8 V 10 5 A, 10 A, 20 A 10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc 1000 300 100 Tc = -25°C 30 10 75°C 3 25°C 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 (°C) 10000 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 100 Typical Capacitance vs. Drain to Source Voltage 100 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 Reverse Drain Current 30 3000 1000 Coss 300 Crss 100 30 VGS = 0 f = 1 MHz 10 100 0 IDR (A) 10 16 12 150 VDD = 100 V 100 50 8 50 V 4 25 V VDS 0 20 40 Gate Charge Rev.2.00 Sep 26, 2005 page 4 of 7 60 80 Qg (nc) 40 50 0 100 1000 Switching Time t (ns) VDD = 100 V 50 V 25 V 200 20 VGS (V) VGS ID = 25 A 30 Switching Characteristics Gate to Source Voltage 250 20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 30 10 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 3 1 300 tf 100 td(off) 30 td(on) 10 3 tr VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 HAT2173H (mJ) Reverse Drain Current vs. Source to Drain Voltage 40 Repetitive Avalanche Energy EAR Reverse Drain Current IDR (A) 50 10 V 30 20 5V VGS = 0 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 100 IAP = 25 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/ W, Tc = 25°C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 µ D= lse t ho PW T PW T pu 1s 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.2.00 Sep 26, 2005 page 5 of 7 VDD HAT2173H Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) Rev.2.00 Sep 26, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2173H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2173H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 26, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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