RENESAS 2SJ535

2SJ535
Silicon P Channel MOS FET
REJ03G0885-0400
(Previous: ADE-208-627B)
Rev.4.00
Sep 07, 2005
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.028 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
1. Gate
2. Drain
3. Source
G
1 2
3
Rev.4.00 Sep 07, 2005 page 1 of 7
S
2SJ535
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–60
Unit
V
VGSS
ID
±20
–30
V
A
–120
–30
A
A
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
–30
77
A
mJ
Channel dissipation
Channel temperature
Pch
Tch
Note 2
35
150
W
°C
–55 to +150
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
–60
±20
—
—
—
—
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IDSS
IGSS
—
—
—
—
–10
±10
µA
µA
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
–1.0
—
—
0.028
–2.0
0.037
V
Ω
ID = –1 mA, VDS = –10 V
Note 4
ID = –15 A, VGS = –10 V
Forward transfer admittance
RDS (on)
|yfs|
—
15
0.038
25
0.055
—
Ω
S
ID = –15 A, VGS = –4 V
Note 4
ID = –15 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
2500
1300
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
300
25
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
Rise time
Turn-off delay time
tr
td (off)
—
—
150
350
—
—
ns
ns
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
220
–0.95
—
—
ns
V
trr
—
100
—
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Body to drain diode reverse recovery time
Note:
4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 7
Test Conditions
Note 4
VGS = –10 V
ID = –15 A
RL = 2 Ω
IF = –30 A, VGS = 0
IF = –30 A, VGS = 0
diF/dt = 50 A/µs
2SJ535
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–1000
ID (A)
–300
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
10 µs
–100
10
0
µ
1
= 1 ms s
DC
0
ms
Op
era
(1
sh
tio
ot)
n(
Tc
=2
Operation in
5°
C)
this area is
limited by RDS (on)
PW
–30
–10
–3
–1
–0.3
0
0
50
100
150
Case Temperature
Ta = 25°C
–0.1
–0.1 –0.3
–1
200
Tc (°C)
Drain Current
ID (A)
–4 V
–40
–30
–3 V
–20
–2.5 V
–10
–20
–10
–2
–4
–6
–25°C
0
–10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
ID = –50 A
–1
–20 A
–10 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 3 of 7
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
VDS (V)
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
–8
25°C
Tc = 75°C
VGS = –2 V
0
VDS (V)
VDS = –10 V
Pulse Test
–3.5 V
–5 V
0
–100
–50
Pulse Test
–40
–30
–30
Typical Transfer Characteristics
Drain Current
ID (A)
–10 V
–8 V
–10
Drain to Source Voltage
Typical Output Characteristics
–50
–3
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
0.02
0.01
–1
–10 V
–3
–10
–30
Drain Current
–100 –300 –1000
ID (A)
2SJ535
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
–10 A
0.08
–20 A
ID = –50 A
0.06
VGS = –4 V
0.04
–50 A
–10 A, –20 A
0.02
–10 V
0
–40
0
40
80
Case Temperature
120
160
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1
Tc (°C)
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
200
100
50
–1
–3
–10
Reverse Drain Current
–30
1000
10
–100
–8
VGS
–12
–16
–80
ID = –30 A
–100
0
40
80
Gate Charge
Rev.4.00 Sep 07, 2005 page 4 of 7
120
160
Qg (nc)
–20
200
VGS (V)
–4
VDD = –10 V
–25 V
–50 V
0
–10
–20
–30
–40
–50
1000
Switching Time t (ns)
–60
VGS = 0
f = 1 MHz
Switching Characteristics
0
VDS
–40
Crss
Drain to Source Voltage VDS (V)
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
–20
–100
Coss
100
Dynamic Input Characteristics
VDD = –10 V
–25 V
–50 V
–30
300
IDR (A)
0
–10
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.3
–3
Typical Capacitance vs.
Drain to Source Voltage
1000
10
–0.1
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
20
–0.3
td(off)
500
tf
200
100
tr
50
td(on)
20 V = –10 V, V = –30 V
GS
DD
PW = 5 µs, duty ≤ 1 %
10
–0.1 –0.3
–1
–3
–10
Drain Current
–30
ID (A)
–100
2SJ535
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–50
–40
–10 V
–30
–5 V
–20
VGS = 0
–10
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
100
IAP = –30 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C
0.1
0.05
D=
PDM
0.02
e
1
u ls
0.0
tp
o
h
1s
0.03
0.01
10 µ
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
Rev.4.00 Sep 07, 2005 page 5 of 7
VDD
2SJ535
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 7
10%
tr
10%
td(off)
tf
2SJ535
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-67
PRSS0003AD-A
TO-220FM / TO-220FMV
1.8g
Unit: mm
10.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
2.5 ± 0.2
4.45 ± 0.3
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
7.0 ± 0.3
0.5 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SJ535-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0