2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous: ADE-208-495A) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 15 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 8 2 3 S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 8 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max — — ±10 10 2.5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V*4 ID = 20 A, VGS = 4 V*4 ID = 20 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 20 A, VGS = 10 V, RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/ dt = 50A/ µs 2SK2912(L), 2SK2912(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 300 75 50 25 50 40 50 100 150 PW 30 DC 10 Op er 3 = 10 1 ms ( 1s ati on ho t) (T c= Operation in this area is limited by RDS(on) 0.1 0.1 200 25 °¡C ) 3 1 30 10 100 Typical Output Characteristics Typical Transfer Characteristics 50 10 V 6V 4.5 V 4V Pulse Test 3.5 V 20 10 2 4 6 8 VDS = 10 V Pulse Test 40 30 Tc = 75°C 25°C 20 –25°C 10 0 10 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1.6 1.2 ID = 50 A 0.8 0.4 20 A 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 2.0 0 0.3 Drain to Source Voltage VDS (V) 30 0 Ta = 25°C Case Temperature TC (°C) VGS = 3 V Drain to Source Saturation Voltage VDS (on) (V) 10 10 µµs 0 µµ 1 m s s 100 0.3 0 Drain Current ID (A) 1000 Drain Current ID (A) Channel Dissipation Pch (W) 100 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 0.02 10 V 0.01 0.005 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2912(L), 2SK2912(S) 0.05 Pulse Test 0.04 ID = 20 A 0.03 10 A VGS = 4 V 0.02 50 A 10, 20 A 10 V 0.01 0 –40 0 40 80 120 160 25°C 20 75°C 10 5 2 VDS = 10 V Pulse Test 1 1 10 5 2 20 50 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 5000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 20 10 0.1 3 10 30 1000 500 Coss 200 Crss 50 0 100 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 40 A 16 VDD = 10 V 25 V 50 V 12 VGS VDS 40 8 20 0 Ciss Reverse Drain Current IDR (A) 80 60 1 4 VDD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 8 0 100 1000 Switching Time t (ns) 100 0.3 2000 100 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Tc = –25°C 50 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 100 300 td(off) 100 tf tr 30 td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 2SK2912(L), 2SK2912(S) 40 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 50 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 30 5V VGS = 0, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP = 40 A VDD = 25 V duty < 1 % Rg > 50 Ω 160 120 80 40 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.5°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.2.00 Sep 07, 2005 page 5 of 8 VDD 2SK2912(L), 2SK2912(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 Ω 10% 10% VDD = 30 V 90% td(on) Rev.2.00 Sep 07, 2005 page 6 of 8 10% tr 90% td(off) tf 2SK2912(L), 2SK2912(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.2.00 Sep 07, 2005 page 7 of 8 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 SC-83 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.86 +– 0.1 JEITA Package Code Unit: mm 2.2 2SK2912(L), 2SK2912(S) Ordering Information Part Name 2SK2912L-E 2SK2912STL-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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