RENESAS HAT3004R-EL-E

HAT3004R
Silicon N Channel / P Channel Power MOS FET
High Speed Power Switching
REJ03G1196-1100
(Previous: ADE-208-500I)
Rev.11.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
5 6
D D
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
Nch
Rev.11.00 Sep 07, 2005 page 1 of 10
S3
Pch
Source
Gate
Drain
HAT3004R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Value
Symbol
Unit
Nch
Pch
VDSS
VGSS
30
±20
–30
±20
V
V
ID
Note 1
ID (pulse)
5.5
44
–3.5
–28
A
A
Body-drain diode reverse drain current
Channel dissipation
IDR
Note 2
Pch
5.5
–3.5
2
A
W
Channel dissipation
Channel temperature
Pch
Tch
3
150
W
°C
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Note 3
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
°C
Electrical Characteristics
N Channel
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
30
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
10
µA
µA
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.0
—
—
0.050
2.0
0.065
V
Ω
VDS = 10 V, ID = 1 mA
Note 4
ID = 3 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
3.5
0.078
5.5
0.11
—
Ω
S
ID = 3 A, VGS = 4 V
Note 4
ID = 3 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
310
220
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
100
17
—
—
pF
ns
VDS = 10 V
VGS = 0
f = 1 MHz
tr
190
25
—
—
ns
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
60
0.9
—
1.4
ns
V
trr
—
50
—
ns
Body-drain diode reverse recovery time
Note:
4. Pulse test
Rev.11.00 Sep 07, 2005 page 2 of 10
Test Conditions
Note 4
VGS = 4 V, ID = 3 A
VDD ≅ 10 V
IF = 5.5 A, VGS = 0
IF = 5.5 A, VGS = 0
diF/dt = 20 A/µs
Note 4
HAT3004R
P Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–30
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
VGS (off)
—
–1.0
—
—
–10
–2.5
µA
V
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
RDS (on)
RDS (on)
—
—
0.12
0.20
0.16
0.34
Ω
Ω
ID = –2 A, VGS = –10 V
Note 5
ID = –2 A, VGS = –4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
2.5
—
3.5
350
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
230
75
—
—
pF
pF
ID = –2 A, VDS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
18
110
—
—
ns
ns
VGS = –4 V, ID = –2 A
VDD ≅ –10 V
Turn-off delay time
Fall time
td (off)
tf
—
—
20
30
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
–1.0
60
–1.5
—
V
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
5. Pulse test
Rev.11.00 Sep 07, 2005 page 3 of 10
Note 5
IF = –3.5 A, VGS = 0
IF = –3.5 A, VGS = 0
diF/dt = 20 A/µs
Note 5
Note 5
HAT3004R
Main Characteristics
N Channel
Typical Output Characteristics
Maximum Safe Operation Area
100
10
DC
3
1
PW
Op
er
at
ion
Operation in
this area is
limited by RDS (on)
0.3
1
=
10
(P
W
m
µs
s
ms
No
≤1
0
te
s)
6
0.1
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
1
3
0.1 0.3
4.5 V
12
4V
8
3.5 V
4
3V
VGS = 2.5 V
0
10
30
0
100
Drain to Source Saturation Voltage
VDS (on) (V)
20
–25°C
25°C
Drain Current
12
8
4
VDS = 10 V
Pulse Test
6
8
Gate to Source Voltage
10
Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
VGS = 4 V
0.1
0.05
10 V
0.02
0.01
0.2
0.5
1
2
Drain Current
Rev.11.00 Sep 07, 2005 page 4 of 10
5
10
ID (A)
6
0.5
8
10
VDS (V)
Pulse Test
0.4
0.3
ID = 5 A
0.2
2A
0.1
1A
0
0
20
2
4
6
8
Gate to Source Voltage
VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID (A)
Tc = 75°C
4
4
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Typical Transfer Characteristics
2
2
Drain to Source Voltage
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0
0
5V
16
Drain to Source Voltage VDS (V)
16
8V
6V
Pulse Test
0
ID (A)
10
Drain Current
ID (A)
Drain Current
20
10 µs
30
10 V
10
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
2A
1A
ID = 5 A
0.12
VGS = 4 V
0.08
0.04
1 A, 2 A, 5 A
10 V
0
–40
0
40
80
Case Temperature
120
Tc (°C)
160
HAT3004R
Body-Drain Diode Reverse
Recovery Time
500
20
Tc = –25°C
5
75°C
25°C
1
0.5
0.2
VDS = 10 V
Pulse Test
0.1
0.2
0.5
1
2
5
10
100
50
20
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
10
5
0.1
20
Drain Current ID (A)
VDS (V)
Ciss
Drain to Source Voltage
Capacitance C (pF)
500
Coss
100
Crss
50
VGS = 0
f = 1 MHz
10
0
10
20
30
2
40
5
10
IDR (A)
50
20
ID = 5.5 A
40
16
30
12
VDD = 5 V
10 V
20 V
VDS
20
8
VGS
10
4
VDD = 20 V
10 V
5V
0
0
0
50
2
4
Gate Charge
Drain to Source Voltage VDS (V)
6
8
10
Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
500
20
200
Reverse Drain Current IDR (A)
VGS = 4 V, VDD = 10 V
PW = 3 µs, duty ≤ 1 %
Switching Time t (ns)
1
Dynamic Input Characteristics
1000
20
0.5
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
200
0.2
tr
100
tf
50
td(off)
20
td(on)
10
5
0.1
16
VGS = 5 V
12
8
0, –5 V
4
Pulse Test
0
0.2
0.5
1
Drain Current
2
ID (A)
Rev.11.00 Sep 07, 2005 page 5 of 10
5
10
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD
2.0
(V)
VGS (V)
2
200
Gate to Source Voltage
10
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
HAT3004R
P Channel
Typical Output Characteristics
Maximum Safe Operation Area
–20
–100
PW
DC
–3
ID (A)
10
0
µs
1
m
s
–10
Op
0m
era
tio
s
n(
PW No
t
Operation in
≤1 e7
–0.3
this area is
0s
)
–0.1 limited by RDS (on)
Ta = 25°C
–0.03 1 shot Pulse
1 Drive Operation
–0.01
–1
–3
–10 –30
–0.1 –0.3
–1
Pulse Test
–5 V
–4.5 V
–4 V
–8
–3.5 V
–4
–3 V
VGS = –2.5 V
0
0
–100
75°C
25°C
Drain Current
–12
–8
–4
VDS = –10 V
Pulse Test
–6
–8
Gate to Source Voltage
–10
Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
VGS = –4 V
0.2
0.1
–10 V
0.05
0.02
–0.2
–0.5
–1
–2
Drain Current
Rev.11.00 Sep 07, 2005 page 6 of 10
–5
–10
ID (A)
–6
–8
–0.5
–10
VDS (V)
Pulse Test
–0.4
–0.3
ID = –2 A
–0.2
–1 A
–0.1
0
–0.5 A
0
–20
–2
–4
–6
–8
Gate to Source Voltage
VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID (A)
Tc = –25°C
Drain to Source Saturation Voltage
VDS (on) (V)
–20
–4
–4
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Typical Transfer Characteristics
–2
–2
Drain to Source Voltage
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0
0
–6 V
–16
Drain to Source Voltage VDS (V)
–16
–8 V
–12
=1
Drain Current
ID (A)
–30
Drain Current
–10 V
10 µs
–10
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
ID = –2 A
0.3
VGS = –4 V
–1 A, –0.5 A
0.2
0.1
–2 A, –1 A, –0.5 A
–10 V
0
–40
0
40
80
Case Temperature
120
Tc (°C)
160
HAT3004R
Body-Drain Diode Reverse
Recovery Time
500
10
Tc = –25°C
5
75°C
2
25°C
1
0.5
VDS = –10 V
Pulse Test
–0.5
–1
–2
50
20
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
10
5
–0.1 –0.2
–10 –20
–5
100
Drain Current ID (A)
VDS (V)
1000
Drain to Source Voltage
Capacitance C (pF)
3000
Ciss
300
30
Crss
VGS = 0
f = 1 MHz
10
0
–10
–20
–30
–40
–10
–8
–30
–12
VDD = –25 V
–10 V
–5 V
–40
–16
ID = –3.5 A
–50
0
4
8
12
Gate Charge
Reverse Drain Current IDR (A)
Switching Time t (ns)
VGS
VDS
–20
200
tr
tf
td(on)
td(off)
5
–0.1 –0.2
–4
16
–20
20
Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
VGS = –4 V, VDD = –10 V
PW = 3 µs, duty ≤ 1 %
10
IDR (A)
VDD = –5 V
–10 V
–25 V
–20
–50
500
20
–10
0
Switching Characteristics
50
–5
0
Drain to Source Voltage VDS (V)
100
–2
Dynamic Input Characteristics
10000
Coss
–1
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
100
–0.5
Pulse Test
–16
VGS = –5 V
–12
–8
0, 5 V
–4
0
–0.5
–1
Drain Current
–2
ID (A)
Rev.11.00 Sep 07, 2005 page 7 of 10
–5
–10
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
VGS (V)
0.1
–0.2
200
Gate to Source Voltage
0.2
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
HAT3004R
Common
Power vs. Temperature Derating
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2
Dr
2.0
ive
Op
er
ion
0
ive
at
1.0
Dr
er
1
Op
Channel Dissipation
Pch (W)
4.0
0
50
at
ion
100
150
Ambient Temperature
200
Ta (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.001
0.02
0.01
D=
PDM
e
uls
tp
ho
1s
0.0001
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
0.0001
10 µ
1s
ho
t
ls
pu
100 µ
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.11.00 Sep 07, 2005 page 8 of 10
D=
PDM
e
10
100
1000
10000
HAT3004R
N channel
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
4V
10%
VDD
= 10 V
50 Ω
10%
90%
td(on)
tr
90%
td(off)
tf
P channel
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–4 V
50 Ω
VDD
= –10 V
Vout
td(on)
Rev.11.00 Sep 07, 2005 page 9 of 10
10%
tr
10%
td(off)
tf
HAT3004R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT3004R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.11.00 Sep 07, 2005 page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .3.0