RENESAS HAT3018R

HAT3018R, HAT3018RJ
Silicon N/P Channel Power MOS FET
High Speed Power Switching
REJ03G0127-0100Z
Rev.1.00
Oct.20.2003
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
8
5
7 6
3
1 2
7 8
D D
2
G
4
5 6
D D
4
G
S1
MOS1
Nch
Rev.1.00, Oct.20.2003, page 1 of 15
S3
MOS2
Pch
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT3018R, HAT3018RJ
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
HAT3018R
HAT3018RJ
Unit
Nch
Pch
Nch
Pch
Drain to source voltage
VDSS
60
–60
60
–60
V
Gate to source voltage
VGSS
±20
±20
±20
±20
V
Drain current
ID
6
–5
6
–5
A
Note1
Drain peak current
ID (pulse)
48
–40
48
–40
A
Avalanche current
IAP
Note4
—
—
6
–5
A
Avalanche energy
EARNote4
—
—
3.08
2.14
mJ
Channel dissipation
Note2
Pch
2
2
2
2
W
Channel dissipation
PchNote3
3
3
3
3
W
Channel temperature
Tch
150
150
150
150
°C
Storage temperature
Tstg
–55 to +150 –55 to +150 –55 to +150 –55 to +150 °C
Notes: 1.
2.
3.
4.
PW ≤ 10µs, duty cycle ≤ 1%
1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Oct.20.2003, page 2 of 15
HAT3018R, HAT3018RJ
Electrical Characteristics
• N Channel
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 60 V, VGS = 0
Zero gate voltage
HAT3018R
IDSS
—
—
—
µA
VDS = 48 V, VGS = 0
drain current
HAT3018RJ IDSS
—
—
10
µA
Ta = 125°C
60
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
6
9.5
—
S
ID = 3 ANote 5, VDS = 10 V
Static drain to source on state
RDS(on)
—
28
35
mΩ
ID = 3 ANote 5, VGS = 10 V
resistance
RDS(on)
—
40
50
mΩ
ID = 3 ANote 5, VGS = 4.5 V
Input capacitance
Ciss
—
1000
—
pF
VDS = 10 V, VGS = 0
Output capacitance
Coss
—
145
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Total gate charge
Qg
—
15
—
nC
VDD = 25 V
Gate to source charge
Qgs
—
2
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
3
—
nC
ID = 6 A
Turn-on delay time
td(on)
—
12
—
ns
VGS = 10 V, ID= 3 A
Rise time
tr
—
10
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
60
—
ns
RL = 10 Ω
Fall time
tf
—
11
—
ns
RG = 4.7 Ω
Body-drain diode forward voltage
VDF
—
0.82
1.07
V
IF = 6 A, VGS = 0
—
40
—
ns
IF = 6 A, VGS = 0
diF/dt = 100A/ µs
Body-drain diode reverse recovery trr
time
Notes: 5. Pulse test
Rev.1.00, Oct.20.2003, page 3 of 15
Note 5
HAT3018R, HAT3018RJ
• P Channel
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to Source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
—
—
–1
µA
VDS = –60 V, VGS = 0
Zero gate voltage
HAT3018R
IDSS
—
—
—
µA
VDS = –48 V, VGS = 0
drain current
HAT3018RJ IDSS
—
—
–10
µA
Ta = 125°C
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.5
V
VDS = –10 V, ID = 1 mA
Forward transfer admittance
|yfs|
3
5
—
S
ID = –2.5 ANote 5, VDS = –10 V
Static drain to source on state
RDS(on)
—
60
76
mΩ
ID = –2.5 ANote 5, VGS = –10 V
resistance
RDS(on)
—
90
130
mΩ
ID = –2.5 ANote 5, VGS = –4.5V
Input capacitance
Ciss
—
1350
—
pF
VDS = –10 V, VGS = 0
Output capacitance
Coss
—
135
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Total gate charge
Qg
—
21
—
nC
VDD = –25 V
Gate to source charge
Qgs
—
3
—
nC
VGS = –10 V
Gate to drain charge
Qgd
—
4
—
nC
ID = –5 A
Turn-on delay time
td(on)
—
20
—
ns
VGS = –10 V, ID= –2.5 A
Rise time
tr
—
15
—
ns
VDD ≅ –30 V
Turn-off delay time
td(off)
—
55
—
ns
RL = 12 Ω
Fall time
tf
—
10
—
ns
RG = 4.7 Ω
Body-drain diode forward voltage VDF
—
–0.85
–1.10
V
IF = –5 A, VGS = 0Note 5
Body-drain diode reverse
recovery time
—
25
—
ns
IF = –5 A, VGS = 0
diF/dt = 100A/ µs
trr
Notes: 5. Pulse test
Rev.1.00, Oct.20.2003, page 4 of 15
HAT3018R, HAT3018RJ
Main Characteristics
• N Channel
30
(A)
Drain Current ID
PW
3
0.3
µs
10
10
1
Typical Output Characteristics
DC
1m
s
=1
0µ
s
0m
s
Op
era
tio
n(
0.1 Operation in
PW
this area is
0.03 limited by RDS(on)
10
10 V
4V
(A)
Maximum Safe Operation Area
10
Drain Current ID
100
N
< 1 ote 6
0s
)
Pulse Test
8
6
3V
4
2
0.01 Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
VGS= 2.5 V
0
2
4
6
Drain to Source voltage
8
10
VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Drain Current ID
(A)
VDS = 10 V
Pulse Test
8
6
4
Tc = 75°C
25°C
2
–25°C
0
1
2
3
Gate to Source Voltage
Rev.1.00, Oct.20.2003, page 5 of 15
4
5
VGS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
Typical Transfer Characteristics
0.3
Pulse Test
0.2
ID = 5 A
0.1
2A
0
1A
20
15
5
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4.5 V
10 V
0.02
0.01
1
3
10
30
100
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source on State Resistance
RDS(on) (Ω)
HAT3018R, HAT3018RJ
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
VGS = 4.5 V
0.04
1, 2, 5 A
0.02
0
-40
Drain Current ID (A)
40
80
120
Tc
160
(°C)
1000
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |yfs| (S)
0
Body-Drain Diode Reverse
Recovery Time
50
20
Tc = –25°C
25°C
5
75°C
2
1
0.5
0.1
10 V
Case Temperature
Forward Transfer Admittance vs.
Drain Current
10
1, 2 ,5A
VDS = 10 V
Pulse Test
0.3
1
3
10
30
Drain Current ID (A)
Rev.1.00, Oct.20.2003, page 6 of 15
100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
500
200
100
50
20
10
0.1
0.3
1
3
10
Reverse Drain Current
30
IDR (A)
100
HAT3018R, HAT3018RJ
1000
Ciss
500
Drain to Source Voltage
Capacitance C (pF)
2000
200
Coss
100
50
10
Crss
VGS = 0
f = 1 MHz
20
0
10
20
30
40
Drain to Source Voltage VDS
50
(V)
Dynamic Input Characteristics
ID = 6 A
80 V = 50 V
DD
25 V
10 V
60
VDS
12
40
8
20
0
8
16
Gate Charge
(A)
Reverse Drain Current IDR
Pulse Test
10 V
12
Rev.1.00, Oct.20.2003, page 7 of 15
5V
VGS = 0, -5 V
4
0
4
VDD = 50 V
25 V
10 V
20
8
16
VGS
Reverse Drain Current vs.
Source to Drain Voltage
16
20
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD
2.0
(V)
24
32
Qg (nc)
0
40
VGS (V)
100
VDS (V)
5000
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
HAT3018R, HAT3018RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Switching Characteristics
Repetitive Avalanche Energy EAR (mJ)
1000
Switching Time t (ns)
300
100
td(off)
30
tr
td(on)
tf
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
ID (A)
4.0
3.2
2.4
1.6
0.8
100
0
25
Switching Time Test Circuit
50
75
100
125
150
Channel Temperature Tch (°C)
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
IAP = 6 A
VDD = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50 Ω
10%
Vin
RL
Vout
10%
V DS
= 30V
Vin
10 V
90%
td(on)
tr
Avalanche Test Circuit
90%
td(off)
tf
Avalanche Waveform
EAR =
L
V DS
Monitor
10%
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.1.00, Oct.20.2003, page 8 of 15
VDD
HAT3018R, HAT3018RJ
• P Channel
Maximum Safe Operation Area
10
–30
PW
–3
DC
s
=1
s
0m
s
Op
era
tio
–0.3
0µ
1m
–0.1 Operation in
this area is
–0.03 limited by RDS(on)
n(
PW
Pulse Test
–10 V
(A)
(A)
Drain Current ID
µs
10
–10
–1
Typical Output Characteristics
–10
Drain Current ID
–100
N
< 1 ote 6
0s
)
–8
–6 V
–4.5 V
–3.5 V
–6
–4
–2
–0.01 Ta = 25°C
–0.003 1 shot Pulse
1 Drive Operation
–0.001
–0.1 –0.3 –1
–3
–10 –30 –100
Drain to Source Voltage VDS (V)
VGS = –2.5 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Typical Transfer Characteristics
Drain to Source Saturation Voltage
VDS(on) (V)
–10
Drain Current ID
(A)
VDS = –10 V
Pulse Test
–8
–6
–4
–2
Tc = 75°C
0
–1
–2
25°C
–25°C
–3
–4
Gate to Source Voltage
Rev.1.00, Oct.20.2003, page 9 of 15
VGS (V)
–5
–1
Pulse Test
–0.8
–0.6
–0.4
ID = –5 A
–0.2
–2 A
–1 A
0
0
–4
–8
–12
Gate to Source Voltage
–16
VGS (V)
–20
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4.5 V
–10 V
0.02
0.01
–1
–10
–3
–30
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source on State Resistance
RDS(on) (Ω)
HAT3018R, HAT3018RJ
–100
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–5 A
0.15
VGS = –4.5 V
0.10
0.05
0
–40
Tc = –25°C
25°C
75°C
2
VDS = –10 V
Pulse Test
0.5
–0.1 –0.3
–1
–3
–10
Drain Current ID (A)
Rev.1.00, Oct.20.2003, page 10 of 15
0
40
80
–30
120
Tc
160
(°C)
1000
10
1
–1, –2 A
–10 V
Body-Drain Diode Reverse
Recovery Time
Forward Transfer Admittance vs.
Drain Current
20
5
–5 A
Case Temperature
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |yfs| (S)
Drain Current ID (A)
50
ID = -1, –2 A
–100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
500
200
100
50
20
10
–0.1 –0.3
–1
–3
–10
Reverse Drain Current
–30
IDR (A)
–100
HAT3018R, HAT3018RJ
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Ciss
500
200
Coss
100
50
Crss
VGS = 0
f = 1 MHz
20
10
0
–10
–20
–30
–40
Drain to Source Voltage VDS
–20
–8
–40
VDS
–60
–80
0
8
(V)
16
Gate Charge
–10
Reverse Drain Current IDR
(A)
Pulse Test
–8
–10 V
–6
–5 V
VGS = 0, 5 V
–2
0
0
Rev.1.00, Oct.20.2003, page 11 of 15
VGS
VDD = –10 V
–25 V
–50 V
Reverse Drain Current vs.
Source to Drain Voltage
–4
–4
ID = –5 A
–100
–50
0
VDD = –10 V
–25 V
–50 V
–0.4 –0.8 –1.2
Source to Drain Voltage
–1.6
–2.0
VSD (V)
–12
–16
24
32
Qg (nc)
-20
40
VGS (V)
1000
Drain to Source Voltage
Capacitance C (pF)
2000
0
Gate to Source Voltage
VDS (V)
5000
HAT3018R, HAT3018RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Switching Characteristics
Switching Time t (ns)
1000
300
100
td(off)
tr
30
td(on)
10
tf
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty < 1 %
1
–0.1 –0.3
–1
–3
–10 –30
Drain Current ID (A)
–100
2.5
IAP = –5 A
VDD = –25 V
duty < 0.1 %
Rg > 50 Ω
2.0
1.5
1.0
0.5
0
25
Switching Time Test Circuit
100
125
150
Vin
10%
D.U.T.
Rg
75
Switching Time Waveform
Vout
Monitor
Vin Monitor
50
Channel Temperature Tch (°C)
RL
90%
V DD
= -30 V
Vin
-10 V
Vout
10%
td(on)
tr
Avalanche Test Circuit
V DS
Monitor
90%
90%
10%
td(off)
tf
Avalanche Waveform
EAR =
L
1
2
2
L • I AP •
I AP
Monitor
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
-15 V
50Ω
0
Rev.1.00, Oct.20.2003, page 12 of 15
VDD
HAT3018R, HAT3018RJ
• In common
Power vs. Temperature Derating
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm) PW ≤ 10 s
3.0
2.0
2
iv
Dr
er
at
ion
ion
Rev.1.00, Oct.20.2003, page 13 of 15
Op
at
0
ive
er
1.0
Dr
Op
1
e
Channel Dissipation
Pch (W)
4.0
50
100
Case Temperature
150
Tc (°C)
200
HAT3018R, HAT3018RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance γs (t)
10
D=1
1
0.1
0.05
θch - f(t) = γs (t) × θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.01
e
uls
p
ot
PDM
h
1s
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance γs (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch - f(t) = γs (t) × θch - f
θch - f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.01
e
uls
0.001
PDM
p
ot
D=
h
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.1.00, Oct.20.2003, page 14 of 15
10
100
1000
10000
HAT3018R, HAT3018RJ
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Rev.1.00, Oct.20.2003, page 15 of 15
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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