HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0300 Rev.3.00 Apr 05, 2006 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 6 S1/D2 S1/D2 7 8 D1 D1 5 6 7 8 2 G1 4 G2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 4 3 2 1 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Tc = 25°C Rev.3.00 Apr 05, 2006 page 1 of 9 Ratings MOS1 30 ±20 14 56 14 8 150 –55 to +150 MOS2 & SBD 30 ±12 22 88 22 15 150 –55 to +150 Unit V V A A A W °C °C HAT2285WP Electrical Characteristics • MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.0 — — 10 — — — — — — — — Typ — — — — 19 27 18 630 155 57 4.6 2.2 1.2 7 30 Max — ±0.1 1 2.5 24 40 — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns — — — — 35 3.6 0.91 18 — — 1.19 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = 10 V Note3 ID = 7 A, VGS = 4.5 V Note3 ID = 7 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 14 A VGS =10 V, ID = 7 A, VDD ≅ 10 V, RL = 1.42 Ω, Rg = 4.7 Ω IF = 14 A, VGS = 0 Note3 IF =14 A, VGS = 0 diF/ dt = 100 A/µs • MOS2 & Schottky Barrier Diode (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) Forward transfer admittance Input capacitance RDS(on) |yfs| Ciss Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VF Body–drain diode reverse recovery time Notes: 3. Pulse test Rev.3.00 Apr 05, 2006 page 2 of 9 trr Min 30 — — 1.4 — — 24 — Typ — — — — 14 15 40 1930 Max — ±0.1 1 2.5 18 23 — — Unit V µA mA V mΩ mΩ S pF — — — — — — — — — — — 300 130 18 5.8 4.5 10 20 45 4.0 0.5 16 — — — — — — — — — — — pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID =11 A, VGS = 10 V Note3 ID = 11 A, VGS = 4.5 V Note3 ID = 11 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 11 A, VDD ≅ 10 V, RL = 0.91 Ω, Rg = 4.7 Ω IF = 3.5 A, VGS = 0 Note3 IF = 22 A, VGS = 0 diF/ dt = 100 A/µs HAT2285WP Electrical Characteristics • MOS1 Power vs. Temperature Derating Maximum Safe Operation Area Drain Current ID (A) 1000 12 8 4 10 µs 1 m 100 µs PW s DC = Op 10 era ms tio n 10 1 Operation in this area is 0.1 limited by RDS(on) Tc = 25°C 0 20 50 100 150 200 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 4.5 V VDS = 10 V Pulse Test 3.6 V 3.2 V 10 VGS = 2.8 V 10 Tc = 75°C 25°C −25°C Pulse Test 0 5 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test 150 100 ID = 5 A 50 2A 1A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 Apr 05, 2006 page 3 of 9 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 10 Case Temperature Tc (°C) 10 V Drain Current ID (A) 100 0.01 1 shot Pulse 0.1 1 Drain Current ID (A) Channel Dissipation Pch (W) 16 100 VGS = 4.5 V 10 V 10 Pulse Test 1 0.1 1 10 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 5A Pulse Test ID = 1 A, 2 A 40 VGS = 4.5 V 30 20 1 A, 2 A, 5 A 10 V 10 0 –25 0 25 50 75 100 125 150 100 50 Tc = –25°C 20 10 5 25°C 2 75°C 1 0.5 0.1 0.1 0.2 0.5 1 VGS = 0 f = 1 MHz 5000 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 2000 1000 Ciss 500 200 Coss 100 Crss 50 20 10 0.3 1 3 10 30 0 100 5 40 16 VGS VDS 12 20 8 10 4 VDD = 25 V 10 V 5V 4 8 12 16 Gate Charge Qg (nC) Rev.3.00 Apr 05, 2006 page 4 of 9 20 25 30 0 20 100 Switching Time t (ns) VDD = 25 V 10 V 5V 15 Switching Characteristics 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics ID = 14 A 10 Drain to Source Voltage VDS (V) Reverse Drain Current IDR (A) 0 50 100 Typical Capacitance vs. Drain to Source Voltage 50 30 5 10 20 Body-Drain Diode Reverse Recovery Time 10000 50 2 Drain Current ID (A) 100 1 0.1 VDS = 10 V Pulse Test 0.2 Case Temperature Tc (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2285WP tr td(off) 50 20 10 td(on) 5 tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 Ω, duty ≤ 1 % 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 HAT2285WP Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 10 V 5V VGS = 0 V, –5 V 10 Pulse Test 0 0.4 0.8 1.2 1.6 Normalized Transient Thermal Impedance γs (t) Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 15.6°C/W, Tc = 25°C 0.1 0.1 0.05 02 0.03 0. 1 e 0.0 puls t o h 1s 0.01 10 µ 100 µ D= PDM PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg RL Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.3.00 Apr 05, 2006 page 5 of 9 10% tr 90% td(off) tf HAT2285WP • MOS2 & Schottky Barrier Diode Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 1000 30 20 10 10 µs 10 0 1 PW µs ms DC = 1 10 Op 0 m era s tio n 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 0 20 50 100 150 200 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 Pulse Test 5V VDS = 10 V Pulse Test 2.8 V 2.6 V 10 2.4 V 10 Tc = 75°C 25°C −25°C VGS = 2.3 V 0 5 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 160 Pulse Test 120 80 ID = 5 A 40 2A 1A 0 2 4 6 8 10 12 Gate to Source Voltage VGS (V) Rev.3.00 Apr 05, 2006 page 6 of 9 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 100 Case Temperature Tc (°C) 10 V Drain Current ID (A) 100 0.01 1 shot Pulse 0.1 1 Drain Current ID (A) Channel Dissipation Pch (W) 40 100 Pulse Test VGS = 4.5 V 10 10 V 1 0.1 1 10 Drain Current ID (A) 100 Forward Transfer Admittance |yfs| (S) 50 Pulse Test 40 30 1 A, 2 A, 5 A 20 VGS = 4.5 V 1 A, 2 A, 5 A 10 10 V 0 –25 0 25 50 75 100 125 150 20 10 5 25°C 2 75°C 1 0.5 VDS = 10 V Pulse Test 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 100 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 10000 5000 VGS = 0 f = 1 MHz 2000 Ciss 1000 500 Coss 200 100 Crss 50 20 10 0.3 1 3 10 30 0 100 5 10 15 20 25 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS VDD = 25 V 10 V 5V 10 8 6 VDS 20 4 VDD = 25 V 10 V 5V 10 10 20 30 2 0 40 Gate Charge Qg (nC) Rev.3.00 Apr 05, 2006 page 7 of 9 50 100 Switching Time t (ns) ID = 22 A 40 0 Tc = –25°C Body-Drain Diode Reverse Recovery Time 20 30 50 Drain Current ID (A) 50 1 0.1 100 Case Temperature Tc (°C) 100 50 Drain to Source Voltag VDS (V) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2285WP 50 td(off) tr 20 td(on) 10 5 tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 Ω, duty ≤ 1 % 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 HAT2285WP Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 10 V VGS = 0 V, –5 V 5V 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 0.3 D=1 0.5 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 8.33°C/W, Tc = 25°C 0.1 0.1 0.05 2 0.03 0.0 1 lse 0 . 0 pu t ho 1s 0.01 10 µ 100 µ D= PDM PW T PW T 1m 100 m 10 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) Rev.3.00 Apr 05, 2006 page 8 of 9 10% tr 90% td(off) tf HAT2285WP Package Dimensions JEITA Package Code RENESAS Code PWSN0008DB-A Previous Code WPAK-DV MASS[Typ.] 0.07 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK-D 4.21Typ 1.27Typ 6.1 +0.1 -0.3 5.9 +0.1 -0.2 3.8 ± 0.2 1.7 1.7 0.5 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part Name HAT2285WP-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 05, 2006 page 9 of 9 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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