RENESAS HAT2210R

HAT2210R, HAT2210RJ
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0578-0300
Rev.3.00
Mar.15.2005
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8<FP-8DA>)
7 8
D D
5 6
D D
2
G
8
4
G
5
7 6
3
1 2
S
1
4
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
S
3
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
Note 2
EAR
Pch Note3
Tch
Tstg
HAT2210R
HAT2210RJ
MOS1
30
±20
7.5
60
7.5
—
MOS2 & SBD
30
±12
8.0
64
8.0
—
MOS1
30
±20
7.5
60
7.5
7.5
MOS2 & SBD
30
±12
8.0
64
8.0
8.0
V
V
A
A
A
A
—
1.5
150
–55 to +150
—
1.5
150
–55 to +150
5.62
1.5
150
–55 to +150
6.4
1.5
150
–55 to +150
mJ
W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Rev.3.00, Mar.15.2005, page 1 of 11
Unit
HAT2210R, HAT2210RJ
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
HAT2210R
Zero gate voltage
drain current
HAT2210RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.3.00, Mar.15.2005, page 2 of 11
Symbol
V(BR)DSS
IGSS
IDSS
IDSS
Min
30
—
—
—
Typ
—
—
—
—
Max
—
±0.1
1
—
Unit
V
µA
µA
µA
IDSS
—
—
10
µA
VGS(off)
RDS(on)
1.0
—
—
9
—
—
—
—
—
—
—
19
27
15
630
155
57
4.6
2.2
1.2
2.5
24
40
—
—
—
—
—
—
—
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
VDS = 10 V, ID = 1 mA
ID = 3.75 A, VGS = 10 V Note4
ID = 3.75 A, VGS = 4.5 V Note4
ID = 3.75 A, VDS = 10 V Note4
—
—
—
—
—
—
7
14
36
3.4
0.85
17
—
—
—
—
1.11
—
ns
ns
ns
ns
V
ns
VGS =10 V, ID = 3.75 A,
VDD ≈ 10 V, RL = 2.66 Ω,
Rg = 4.7 Ω
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 24 V, VGS = 0,
Ta = 125°C
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 7.5 A
IF = 7.5 A, VGS = 0 Note4
IF =7.5 A, VGS = 0
diF/ dt = 100 A/µs
HAT2210R, HAT2210RJ
• MOS2 & Schottky Barrier Diode
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Schottky Barrier diode forward voltage
VF
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
trr
Rev.3.00, Mar.15.2005, page 3 of 11
Min
30
—
—
1.4
—
—
15
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
17
21
25
1330
230
92
11
3.8
3.2
10
16
43
3.9
Max
—
±0.1
1
2.5
22
29
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
mA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
—
—
0.5
15
—
—
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID =1 mA
ID =4 A, VGS = 10 V Note4
ID = 4 A, VGS = 4.5 V Note4
ID = 4 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 8 A
VGS = 10 V, ID = 4 A,
VDD ≈ 10 V, RL = 2.5 Ω,
Rg = 4.7 Ω
IF = 3.5 A, VGS = 0 Note4
IF = 8 A, VGS = 0
diF/ dt = 100 A/µs
HAT2210R, HAT2210RJ
Main Characteristics
• MOS1
Power vs. Temperature Derating
3.0
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
100
2.0
1.0
10 µs
10
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
4.0
PW
DC
=1
1 m 100
µs
s
0m
s(
1s
ho
tio
t)
n(
P
Operation in
W N
≤ 1 ote
this area is
0s 5
)
0.1 limited by RDS(on)
Op
era
1
Ta = 25°C
0
50
100
Ambient Temperature
150
200
0.01 1 shot Pulse
0.1
1
10
100
Drain to Source Voltage VDS (V)
Ta (°C)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
Typical Transfer Characteristics
20
4.5 V
3.2 V
10
VGS = 2.8 V
Drain Current
ID (A)
ID (A)
Drain Current
VDS = 10 V
Pulse Test
3.6 V
10 V
10
Pulse Test
200
5
Drain to Source Voltage VDS
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Pulse Test
150
100
ID = 5 A
50
2A
1A
0
12
4
8
Gate to Source Voltage
Rev.3.00, Mar.15.2005, page 4 of 11
0
10
(V)
16
20
VGS (V)
8
VGS
10
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
Tc = 75°C
25°C
−25°C
2
4
6
Gate to Source Voltage
VGS = 4.5 V
10 V
10
1
0.1
Pulse Test
1
Drain Current
10
ID (A)
100
40
VGS = 4.5 V
30
20
1 A, 2 A, 5 A
10 V
10
0
-25
Forward Transfer Admittance vs.
Drain Current
100
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
50
5A
Pulse Test
ID = 1 A, 2 A
50
Tc = –25°C
20
10
5
25°C
2
75°C
1
0.5
0.1
0.1 0.2 0.5 1
0
25 50 75 100 125 150
Case Temperature Tc (°C)
50 100
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
5000
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
2000
1000
Ciss
500
200
Coss
100
Crss
50
20
10
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
16
VGS
30
12
VDS
20
8
10
0
4
VDD = 25 V
10 V
5V
4
8
Gate Charge
Rev.3.00, Mar.15.2005, page 5 of 11
12
16
Qg (nC)
0
20
50
Switching Time t (ns)
VDD = 25 V
10 V
5V
40
Switching Characteristics
(V)
ID = 7.5 A
5
10
15
20
25
30
Drain to Source Voltage VDS (V)
100
20
VGS
50
Gate to Source Voltage
VDS (V)
5 10 20
10000
1
0.1
Drain to Source Voltage
2
Drain Current
Body-Drain Diode Reverse
Recovery Time
100
VDS = 10 V
Pulse Test
0.2
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2210R, HAT2210RJ
td(off)
tr
20
10
td(on)
5
tf
2 VGS = 10 V, VDD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2
5 10 20
Drain Current ID (A)
50 100
HAT2210R, HAT2210RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
10 V
5V
VGS = 0 V, –5 V
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
10
IAP = 7.5 A
VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
8
6
4
2
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.05
0.02
0.01
0.01
t
ho
lse
PDM
pu
D=
1s
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.3.00, Mar.15.2005, page 6 of 11
10
100
1000
10000
HAT2210R, HAT2210RJ
• MOS2 & Schottky Barrier Diode
Power vs. Temperature Derating
3.0
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
100
2.0
1.0
10 µs
10
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
4.0
PW
DC
1m
s
0µ
s
=1
0m
s(
1s
ho
tio
t)
n(
PW
Operation in
N
≤ 1 ote
this area is
0s 5
)
0.1 limited by RDS(on)
Op
era
1
Ta = 25°C
0.01 1 shot Pulse
0
50
100
150
Ambient Temperature
0.1
200
1
Ta (°C)
Typical Transfer Characteristics
Pulse Test
10 V
VDS = 10 V
Pulse Test
2.8 V
10
2.6 V
ID (A)
3.0 V
ID (A)
100
20
Drain Current
4.5 V
10
Drain to Source Voltage VDS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
Drain Current
10
10
Tc = 75°C
25°C
VGS = 2.4 V
−25°C
200
5
Drain to Source Voltage VDS
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Pulse Test
150
100
ID = 5 A
50
0
2A
1A
6
2
4
8
10
12
Gate to Source Voltage VGS (V)
Rev.3.00, Mar.15.2005, page 7 of 11
0
10
(V)
2
4
6
Gate to Source Voltage
8
VGS
10
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
VGS = 4.5 V
10
1
0.1
10 V
1
Drain Current
10
ID (A)
100
40
5A
ID = 1 A, 2 A
30
VGS = 4.5 V
20
1 A, 2 A, 5 A
10 V
10
0
-25
Forward Transfer Admittance vs.
Drain Current
100
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
50
Tc = –25°C
20
10
5
25°C
2
75°C
1
0.5
0.1
0.1 0.2 0.5 1
0
25 50 75 100 125 150
Case Temperature Tc (°C)
50 100
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
5000
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
Ciss
2000
1000
500
200
Coss
100
Crss
50
20
10
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
30
8
VDD = 25 V
10 V
5V
VGS 6
VDS
20
4
VDD = 25 V
10 V
5V
10
0
4
8
Gate Charge
Rev.3.00, Mar.15.2005, page 8 of 11
12
2
16
Qg (nC)
0
20
50
Switching Time t (ns)
40
Switching Characteristics
(V)
ID = 8 A
5
10
15
20
25
30
Drain to Source Voltage VDS (V)
100
10
VGS
50
Gate to Source Voltage
VDS (V)
5 10 20
10000
1
0.1
Drain to Source Voltage
2
Drain Current
Body-Drain Diode Reverse
Recovery Time
100
VDS = 10 V
Pulse Test
0.2
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2210R, HAT2210RJ
td(off)
tr
20
td(on)
10
5
tf
2
VGS = 10 V, VDD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2
5 10 20
Drain Current ID (A)
50 100
HAT2210R, HAT2210RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10 V
VGS = 0 V, –5 V
5V
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
10
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
20
IAP = 8 A
VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
8
6
4
2
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.05
0.02
0.01
0.01
e
uls
PDM
p
ot
D=
h
1s
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.3.00, Mar.15.2005, page 9 of 11
10
100
1000
10000
HAT2210R, HAT2210RJ
• Common
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
2
L • IAP2 •
VDSS
VDSS – VDD
I AP
Monitor
V (BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
10 V
50 Ω
0
VDD
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3.00, Mar.15.2005, page 10 of 11
tr
10%
90%
td(off)
tf
HAT2210R, HAT2210RJ
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-A
FP-8DA
MASS[Typ.]
F
0.085g
*1 D
bp
b1
5
Index mark
1
Z
c1
c
HE
*2 E
8
4
*3
Terminal cross section
bp
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
x M
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.42
0.50
1.75
A
A
A1
bp
L
0.40
b1
c
0.19
c1
0.25
0.20
0°
Detail F
y
0.22
HE
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT2210R-EL-E
HAT2210RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00, Mar.15.2005, page 11 of 11
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
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Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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