RENESAS HAT2024R

HAT2024R
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1159-0500
(Previous: ADE-208-494C)
Rev.5.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
MOS1
Rev.5.00 Sep 07, 2005 page 1 of 7
5 6
D D
S3
MOS2
Source
Gate
Drain
HAT2024R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
5.5
V
A
44
5.5
A
A
Pch
Note 3
Pch
2
3
W
W
Tch
Tstg
150
–55 to +150
°C
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
1.0
—
—
10
2.0
µA
V
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
Static drain to source on state resistance
RDS (on)
RDS (on)
—
—
0.05
0.078
0.065
0.11
Ω
Ω
ID = 3 A, VGS = 10 V
Note 4
ID = 3 A, VGS = 4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
3.5
—
5.5
310
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
220
100
—
—
pF
pF
ID = 3 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
17
190
—
—
ns
ns
VGS = 4 V, ID = 3 A,
VDD ≅ 10 V
Turn-off delay time
Fall time
td (off)
tf
—
—
25
60
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.9
50
1.4
—
V
ns
Note:
4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 7
Test Conditions
ID = 10 mA, VGS = 0
Note 4
IF = 5.5 A, VGS = 0
IF = 5.5 A, VGS = 0
diF/dt = 20 A/µs
Note 4
Note 4
HAT2024R
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
Dr
ive
2.0
0
ive
Op
er
50
ion
at
er
1.0
Dr
Op
1
0
Drain Current
Pch (W)
3.0
2
Channel Dissipation
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
at
ID (A)
100
4.0
ion
100
200
150
Ambient Temperature
10 µs
30
10
10
1m
DC
3
PW
Op
er
1
at
ion
Operation in
this area is
limited by RDS (on)
0.3
0.1
=
(P
10
W
0µ
ms
No
≤1
0
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3
1
3
10
Drain to Source Voltage
Ta (°C)
s
s
te
5
s)
30
100
VDS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
20
10 V 8 V 6 V
20
5V
25°C
12
4V
8
3.5 V
4
3V
(A)
4.5 V
Tc = 75°C
16
–25°C
ID
16
12
Drain Current
Drain Current
ID
(A)
Pulse Test
8
4
VDS = 10 V
Pulse Test
VGS = 2.5 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.4
0.3
ID = 5 A
0.2
2A
0.1
1A
0
0
2
4
6
Gate to Source Voltage
Rev.5.00 Sep 07, 2005 page 3 of 7
8
10
VGS (V)
6
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
4
Gate to Source Voltage
VDS (V)
0.5
2
1
Pulse Test
0.5
0.2
VGS = 4 V
0.1
0.05
10 V
0.02
0.01
0.2
0.5
1
2
Drain Current
5
10
ID (A)
20
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT2024R
0.20
Pulse Test
0.16
2A
1A
ID = 5 A
0.12
VGS = 4 V
0.08
1 A, 2 A, 5 A
0.04
10 V
0
–40
0
40
80
120
Case Temperature
Tc
160
20
Tc = –25°C
10
5
25°C
2
75°C
1
0.5
0.2
VDS = 10 V
Pulse Test
0.1
0.2
5
10
20
1000
500
Capacitance C (pF)
200
100
50
20
10
0.5
1
2
5
Coss
100
Crss
50
VGS = 0
f = 1 MHz
0
10
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
VDD = 5 V
10 V
20 V
30
VDS
12
20
8
VGS
10
4
VDD = 20 V
10 V
5V
0
2
4
Gate Charge
Rev.5.00 Sep 07, 2005 page 4 of 7
6
0
8
Qg (nc)
10
20
Reverse Drain Current IDR (A)
16
40
VGS (V)
Reverse Drain Current IDR (A)
ID = 5.5 A
0
200
10
0.2
20
50
Ciss
20
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage
Reverse Recovery Time trr (ns)
2
Typical Capacitance vs.
Drain to Source Voltage
500
5
0.1
VDS (V)
1
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
0.5
16
VGS = 5 V
0, –5 V
12
8
4
Pulse Test
0
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
HAT2024R
Switching Characteristics
500
Switching Time t (ns)
VGS = 4 V, VDD = 10 V
PW = 3 µs, duty ≤ 1 %
200
tr
100
tf
50
td(off)
20
td(on)
10
5
0.1
0.2
0.5
1
2
Drain Current
ID
5
10
(A)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.001
0.02
0.01
1s
h
0.0001
10 µ
p
ot
uls
e
D=
PDM
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
0.0001
10 µ
1s
ho
tp
100 µ
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.5.00 Sep 07, 2005 page 5 of 7
D=
PDM
e
uls
10
100
1000
10000
HAT2024R
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
4V
50 Ω
VDD
= 10 V
10%
90%
td(on)
Rev.5.00 Sep 07, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2024R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2024R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0