HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1159-0500 (Previous: ADE-208-494C) Rev.5.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Rev.5.00 Sep 07, 2005 page 1 of 7 5 6 D D S3 MOS2 Source Gate Drain HAT2024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 5.5 V A 44 5.5 A A Pch Note 3 Pch 2 3 W W Tch Tstg 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — 1.0 — — 10 2.0 µA V VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS (on) RDS (on) — — 0.05 0.078 0.065 0.11 Ω Ω ID = 3 A, VGS = 10 V Note 4 ID = 3 A, VGS = 4 V Forward transfer admittance Input capacitance |yfs| Ciss 3.5 — 5.5 310 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 220 100 — — pF pF ID = 3 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 17 190 — — ns ns VGS = 4 V, ID = 3 A, VDD ≅ 10 V Turn-off delay time Fall time td (off) tf — — 25 60 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.9 50 1.4 — V ns Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 7 Test Conditions ID = 10 mA, VGS = 0 Note 4 IF = 5.5 A, VGS = 0 IF = 5.5 A, VGS = 0 diF/dt = 20 A/µs Note 4 Note 4 HAT2024R Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Dr ive 2.0 0 ive Op er 50 ion at er 1.0 Dr Op 1 0 Drain Current Pch (W) 3.0 2 Channel Dissipation Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s at ID (A) 100 4.0 ion 100 200 150 Ambient Temperature 10 µs 30 10 10 1m DC 3 PW Op er 1 at ion Operation in this area is limited by RDS (on) 0.3 0.1 = (P 10 W 0µ ms No ≤1 0 Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 Drain to Source Voltage Ta (°C) s s te 5 s) 30 100 VDS (V) Note 5: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 10 V 8 V 6 V 20 5V 25°C 12 4V 8 3.5 V 4 3V (A) 4.5 V Tc = 75°C 16 –25°C ID 16 12 Drain Current Drain Current ID (A) Pulse Test 8 4 VDS = 10 V Pulse Test VGS = 2.5 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 0 2 4 6 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 7 8 10 VGS (V) 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 4 Gate to Source Voltage VDS (V) 0.5 2 1 Pulse Test 0.5 0.2 VGS = 4 V 0.1 0.05 10 V 0.02 0.01 0.2 0.5 1 2 Drain Current 5 10 ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2024R 0.20 Pulse Test 0.16 2A 1A ID = 5 A 0.12 VGS = 4 V 0.08 1 A, 2 A, 5 A 0.04 10 V 0 –40 0 40 80 120 Case Temperature Tc 160 20 Tc = –25°C 10 5 25°C 2 75°C 1 0.5 0.2 VDS = 10 V Pulse Test 0.1 0.2 5 10 20 1000 500 Capacitance C (pF) 200 100 50 20 10 0.5 1 2 5 Coss 100 Crss 50 VGS = 0 f = 1 MHz 0 10 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage VDD = 5 V 10 V 20 V 30 VDS 12 20 8 VGS 10 4 VDD = 20 V 10 V 5V 0 2 4 Gate Charge Rev.5.00 Sep 07, 2005 page 4 of 7 6 0 8 Qg (nc) 10 20 Reverse Drain Current IDR (A) 16 40 VGS (V) Reverse Drain Current IDR (A) ID = 5.5 A 0 200 10 0.2 20 50 Ciss 20 di / dt = 20 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage Reverse Recovery Time trr (ns) 2 Typical Capacitance vs. Drain to Source Voltage 500 5 0.1 VDS (V) 1 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.5 16 VGS = 5 V 0, –5 V 12 8 4 Pulse Test 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) HAT2024R Switching Characteristics 500 Switching Time t (ns) VGS = 4 V, VDD = 10 V PW = 3 µs, duty ≤ 1 % 200 tr 100 tf 50 td(off) 20 td(on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID 5 10 (A) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.001 0.02 0.01 1s h 0.0001 10 µ p ot uls e D= PDM PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 0.0001 10 µ 1s ho tp 100 µ PW T PW T 1m 10 m 100 m 1 Pulse Width PW (S) Rev.5.00 Sep 07, 2005 page 5 of 7 D= PDM e uls 10 100 1000 10000 HAT2024R Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 4V 50 Ω VDD = 10 V 10% 90% td(on) Rev.5.00 Sep 07, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2024R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT2024R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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