HAT2114R, HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1.00 Oct.06.2003 Features • • • • Low on-resistance Capable of 4.5V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 4 5 6 D D 4 G 2 G S1 MOS1 Rev.1.00, Oct.06.2003, page 1 of 9 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2114R, HAT2114RJ Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol HAT2114R HAT2114RJ Unit Drain to source voltage VDSS 60 60 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 6 6 A Note1 Drain peak current ID (pulse) 48 48 A Avalanche current IAP Note4 — 6 A Avalanche energy Note4 EAR — 3.08 mJ Channel dissipation Note2 Pch 2 2 W Channel dissipation PchNote3 3 3 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. 2. 3. 4. PW ≤ 10µs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Oct.06.2003, page 2 of 9 HAT2114R, HAT2114RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS — — V ID = 10 mA, VGS = 0 Gate to Source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 60 V, VGS = 0 Zero gate voltage HAT2114R IDSS — — — µA VDS = 48 V, VGS = 0 drain current HAT2114RJ IDSS 60 — — 10 µA Ta = 125°C Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 6 9.5 — S ID = 3 ANote5, VDS = 10 V Static drain to source on state RDS(on) — 28 32 mΩ ID = 3 ANote5, VGS = 10 V resistance RDS(on) — 40 50 mΩ ID = 3 ANote5, VGS = 4.5 V Input capacitance Ciss — 1000 — pF VDS = 10V, VGS = 0 Output capacitance Coss — 145 — pF f = 1 MHz Reverse transfer capacitance Crss — 85 — pF Total gate charge Qg — 15 — nC VDD = 25 V Gate to source charge Qgs — 2 — nC VGS = 10 V Gate to drain charge Qgd — 3 — nC ID = 6A Turn-on delay time td(on) — 12 — ns VGS = 10 V, ID= 3 A Rise time tr — 10 — ns VDD ≅ 30 V Turn-off delay time td(off) — 60 — ns RL = 10 Ω Fall time tf — 11 — ns RG =4.7 Ω Body-drain diode forward voltage VDF — 0.82 1.07 V IF = 6 A, VGS = 0Note5 — 40 — ns IF = 6A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery trr time Notes: 5. Pulse test Rev.1.00, Oct.06.2003, page 3 of 9 HAT2114R, HAT2114RJ Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 2.0 er at ion ion Op at ive er 0 Dr Op 1.0 ive Dr 1 50 100 Case Temperature 150 Ta (°C) 200 10 30 PW 3 1 0.3 µs 10 10 Drain Current ID 3.0 100 (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) 2 Channel Dissipation Pch (W) 4.0 DC 0µ 1m =1 s s 0m s Op era tio n (P W No 0.1 Operation in < 1 te this area is 0s 6 ) 0.03 limited by RDS(on) 0.01 Ta = 25°C 0.003 1 shot Pulse 1 Drive Operation 0.001 0.1 0.3 1 3 10 Drain to Source Voltage 30 100 VDS (V) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 10 10 Pulse Test (A) 8 VDS = 10 V Pulse Test 6 3V 4 2 Drain Current ID Drain Current ID (A) 10 V 4V 8 6 4 Tc = 75°C 2 −25°C VGS = 2.5 V 0 25°C 2 4 6 Drain to Source voltage Rev.1.00, Oct.06.2003, page 4 of 9 8 10 VDS (V) 0 1 2 3 Gate to Source Voltage 4 5 VGS (V) HAT2114R, HAT2114RJ Pulse Test 0.2 ID = 5 A 2A 1A 20 15 5 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 1, 2 ,5A 0.06 VGS = 4.5 V 0.04 1, 2, 5 A 0.02 0 -40 Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 0.05 0.1 0 Drain to Source on State Resistance RDS(on) (Ω) 0.3 10 V 0 40 80 120 160 Case Temperature Tc (°C) Rev.1.00, Oct.06.2003, page 5 of 9 VGS = 4.5 V 10 V 0.02 0.01 1 10 30 3 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 10 Tc = -25°C 25°C 5 75°C 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2114R, HAT2114RJ Typical Capacitance vs. Drain Source Voltage Body-Drain Diode Reverse Recovery Time 5000 di / dt = 100 A / µs VGS = 0, Ta = 25°C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 1000 Ciss 500 200 Coss 100 50 Crss 20 VGS = 0 f = 1 MHz 20 10 0.1 10 0.3 1 3 10 Reverse Drain Current 30 0 100 IDR (A) Dynamic Input Characteristics 12 40 8 20 4 VDD = 50V 25V 10V 8 16 Gate Charge 24 32 Qg (nc) Rev.1.00, Oct.06.2003, page 6 of 9 0 40 Switching Time t (ns) 16 VGS 1000 VGS (V) ID = 6 A 80 V = 50 V DD 25 V 10 V 60 V DS 0 Switching Characteristics 20 Gate to Source Voltage Drain to Source Voltage VDS (V) 100 10 20 30 40 50 Drain Source Voltage VDS (V) 300 100 td(off) 30 tr td(on) tf 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2114R, HAT2114RJ Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) 20 Pulse Test 16 10 V 12 5V 8 VGS = 0, -5 V 4 0 0.4 0.8 1.2 1.6 2.0 Source Drain Voltage VSD (V) 4.0 IAP = 6 A VDD = 25 V L = 100 µH duty < 0.1 % Rg > 50 Ω 3.2 2.4 1.6 0.8 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Waveform L V DS Monitor 1 2 • L • I AP • 2 EAR = VDSS VDSS – V DD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Rg 90% Vout Monitor Vin Monitor D.U.T. Vin Vout Vin 10 V V DS = 30V 10% 90% td(on) Rev.1.00, Oct.06.2003, page 7 of 9 10% RL tr 10% 90% td(off) tf HAT2114R, HAT2114RJ Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θch-f(t) = γs (t) • θch - f θch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6mm) 0.01 e uls p ot PDM h 1s 0.001 D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θch-f(t) = γs (t) • θch - f θch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6mm) 0.02 0.01 0.01 0.001 0.0001 10 µ t ho lse PDM pu D= 1s PW T PW T 100 µ 1m 10 m 100 m 1 Pulse Width PW (S) Rev.1.00, Oct.06.2003, page 8 of 9 10 100 1000 10000 HAT2114R, HAT2114RJ Package Dimensions As of January, 2003 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0˚ – 8˚ 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Rev.1.00, Oct.06.2003, page 9 of 9 Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g Sales Strategic Planning Div. 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