RENESAS HAT2215R

HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G0486-0300
Rev.3.00
Dec.22.2004
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
Outline
SOP-8
7 8
D D
5 6
D D
8
2
G
5
7 6
4
G
3
1 2
S1
MOS1
4
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
Pch Note4
Tch
Tstg
Ratings
HAT2215R
80
±20
3.4
20.4
3.4
—
—
1.5
2.2
150
–55 to +150
HAT2215RJ
80
±20
3.4
20.4
3.4
3.4
1.54
1.5
2.2
150
–55 to +150
PW ≤ 10 µs, duty cycle ≤ 1 %
Value at Tch = 25°C, Rg ≥ 50 Ω
1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Rev.3.00 Dec. 22, 2004 page 1 of 7
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
HAT2215R, HAT2215RJ
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
HAT2215R
Zero gate voltage
drain current
HAT2215RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 5. Pulse test
Rev.3.00 Dec. 22, 2004 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
IDSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
±20
—
—
—
—
1.0
—
—
4.2
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
88
100
7.0
400
57
24
7.3
1.1
1.3
6.0
Max
—
—
±10
1
—
10
2.5
115
145
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
—
—
—
—
—
4.0
39
3.5
0.83
30
—
—
—
1.08
—
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VGS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 64 V, VGS = 0
Ta = 125°C
VDS = 10 V, ID = 1 mA
ID = 1.7 A, VGS = 10 V Note5
ID = 1.7 A, VGS = 4.5 V Note5
ID = 1.7 A, VDS = 10 V Note5
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 25 V
VGS = 10 V
ID = 3.4 A
VGS =10 V, ID = 1.7 A
VDD ≈ 30 V
RL = 17.6 Ω
Rg = 4.7 Ω
IF = 3.4 A, VGS = 0 Note5
IF =3.4 A, VGS = 0
diF/ dt = 100 A/µs
HAT2215R, HAT2215RJ
Main Characteristics
Power vs. Temperature Derating
2.0
1D
1.0
Dr
ive
O
pe
riv
ra
eO
pe
0
50
PW
DC
1
n
100
150
0.1 Operation in
0.1
1
t)
≤ 1Note
0s 4
)
3.0 V
VGS = 2.8 V
100
ID (A)
VDS = 10 V
Pulse Test
5
0
10
(V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Pulse Test
400
300
200
ID = 2 A
100
1A
0.5 A
15
5
10
20
Gate to Source Voltage VGS (V)
Tc = 75°C
25°C
−25°C
2
3
4
Gate to Source Voltage VGS
5
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Static Drain to Source on State Resistance
RDS(on) (mΩ)
5
Drain to Source Voltage VDS
10
Typical Transfer Characteristics
Drain Current
ID (A)
Drain Current
ho
10
Pulse Test
Drain to Source Voltage VDS(on) (mV)
PW
Drain to Source Voltage VDS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
3.4 V
4.5 V
10 V
Rev.3.00 Dec. 22, 2004 page 3 of 7
n(
this area is
limited by RDS(on)
Ta (°C)
5
0
1s
tio
200
3.2 V
500
s(
era
Typical Output Characteristics
0
0m
Op
Ta = 25°C
0.001 1 shot Pulse
ion
Ambient Temperature
10
=1
0.01
tio
rat
ID (A)
3.0
10
10 µs
0µ
1m s
s
10
Drain Current
Pch (W)
Channel Dissipation
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2
Maximum Safe Operation Area
100
4.0
100
VGS = 4.5 V
10 V
10
0.1
Pulse Test
1
Drain Current
10
ID (A)
100
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
ID = 0.5 A, 1 A, 2 A
200
150
VGS = 4.5 V
0.5 A, 1 A, 2 A
100
50
0
-25
10 V
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
1
0.3
0.1
25°C
75°C
0.01
0.01
1
3
10
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
500
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1
3
Reverse Drain Current
200
100
50
Coss
20
Crss
10
5
VGS = 0
f = 1 MHz
2
0
10
IDR (A)
VDD = 50 V
25 V
10 V
VDS
12
40
8
20
0
4
VDD = 50 V
25 V
10 V
2
4
Gate Charge
Rev.3.00 Dec. 22, 2004 page 4 of 7
6
8
Qg (nC)
40
50
0
10
td(off)
50
Switching Time t (ns)
60
VGS
16
VGS
80
30
Switching Characteristics
(V)
ID = 3.4 A
20
100
20
Gate to Source Voltage
100
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
0.3
1000
10
Drain to Source Voltage
0.03 0.1
Drain Current
Body-Drain Diode Reverse
Recovery Time
100
VDS = 10 V
Pulse Test
0.03
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2215R, HAT2215RJ
20
tf
10
5
td(on)
tr
2 VGS = 10 V, VDD = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
1
0.1 0.2
1
2
0.5
5
Drain Current ID (A)
10
HAT2215R, HAT2215RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
10 V
5
VGS = 0 V, –5 V
5V
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
2.0
IAP = 3.4 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
10%
Vin
V DS
= 30 V
Vin
10 V
Vout
10%
90%
td(on)
Avalanche Test Circuit
VDS
Monitor
tr
10%
90%
td(off)
tf
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
I AP
Monitor
V (BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
10 V
50 Ω
0
Rev.3.00 Dec. 22, 2004 page 5 of 7
VDD
HAT2215R, HAT2215RJ
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation)
10
1
0.1
0.01
D=1
0.5
0.2
0.1
0.05
0.02
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
1
0.0
se
pul
t
o
1sh
PDM
D=
0.001
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
ot
1sh
θch - f(t) = γs (t) x θch - f
θch - f = 210°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
se
pul
PDM
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
Rev.3.00 Dec. 22, 2004 page 6 of 7
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
HAT2215R, HAT2215RJ
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
1
1.75 Max
*0.22 ± 0.03
0.20 ± 0.03
4
0.75 Max
+ 0.10
6.10 – 0.30
1.08
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.14 – 0.04
+ 0.11
0° – 8°
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Ordering Information
Part Name
HAT2215R-EL-E
HAT2215RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Dec. 22, 2004 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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