To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE FS5KM-5 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS .............................................................................. 250V ¡rDS (ON) (MAX) .............................................................. 1.3Ω ¡ID .......................................................................................... 5A ¡Viso .............................................................................. 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID Drain-source voltage Gate-source voltage Drain current IDM PD Tch Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight Tstg Viso — Conditions VGS = 0V VDS = 0V AC for 1minute, Terminal to case Typical value Ratings Unit 250 ±30 5 V V A 15 30 –55 ~ +150 –55 ~ +150 A W °C °C 2000 2.0 Vrms g Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case Thermal resistance POWER DISSIPATION DERATING CURVE 50 40 30 20 10 0 0 50 100 150 200 250 ±30 — — — — — — ±10 V V µA — 2 — — — 3 1.0 2.0 1 4 1.3 2.6 mA V Ω V 1.6 — — — 2.5 270 55 10 — — — — S pF pF pF — — — — 11 13 32 22 — — — — ns ns ns ns — 1.5 2.0 V — — 4.17 °C/W tw=10µs 100µs 1ms 100 7 5 3 2 10ms TC = 25°C Single Pulse DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 5 10V 6V 7V 6 6V 4 5V 2 Max. 101 7 5 3 2 10–1 7 5 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= TC = 25°C 30W Pulse Test 8 Typ. MAXIMUM SAFE OPERATING AREA CASE TEMPERATURE TC (°C) 10 Unit Min. 5 3 2 DRAIN CURRENT ID (A) VSD Rth (ch-c) Turn-off delay time Fall time Source-drain voltage POWER DISSIPATION PD (W) td (off) tf DRAIN CURRENT ID (A) Crss td (on) tr DRAIN CURRENT ID (A) V (BR) GSS IGSS Limits Test conditions TC = 25°C Pulse Test PD= 30W 4 3 5.5V 2 5V 1 4.5V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 32 24 ID = 10A 16 8A 8 0 5A 0 4 8 12 3A 20 1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 4 8 12 16 VDS = 10V Pulse Test TC = 25°C 3 2 100 7 5 75°C 125°C 3 2 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Ciss Coss 3 2 101 Crss 7 5 Tch = 25°C f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 20V 101 7 5 4 102 7 5 VGS = 10V 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 6 3 2 3 TRANSFER CHARACTERISTICS (TYPICAL) TC = 25°C VDS = 50V Pulse Test 0 4 DRAIN CURRENT ID (A) 8 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 DRAIN CURRENT ID (A) 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 102 7 5 td(off) 3 2 tf td(on) 101 7 5 tr 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 50V 100V 12 200V 8 4 101 7 5 0 4 8 12 16 25°C 8 75°C 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 12 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test 16 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 Tch = 25°C ID = 5A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999