WiP Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS Low RDS(on) Single Event Effect (SEE) hardened LET 55, Range: 90µm VGS: 0V to -15V, VDS = 250V, approved VGS:-15V to -20V, VDS = 160V, approved 4 Total Ionisation Dose (TID) hardened 100 kRad approved (Level R) Hermetically sealed 1 2 N-channel Type Marking 3 Pin Configuration 1 2 3 Package 4 BUY25CS12K-01 - D S G Not connected TO-257AA BUY25CS12K-11 - G D S Not connected TO-257AA Maximum Ratings Parameter Symbol Values Unit Drain Source Voltage VDS 250 V Gate Source Voltage VGS +/- 20 V Drain Gate Voltage VDG 250 V Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Source Current IS 12.4 A Drain Current Pulsed, tp limited by Tjmax IDM 50 Apk Ptot 75 W Junction Temperature TJ -55 to + 150 °C Operating and Storage Temperature Top -55 to + 150 °C Avalanche Energy EAS 60 mJ Thermal Resistance (Junction to Case) Rth JC 1.66 K/W Soldering Temperature Tsol 250 °C Total Power Dissipation 1) A 12.4 8 Thermal Characteristics Notes.: 1) For TS ≤ 25°C. For TS > 25°C derating is required. IFAG PMM RPD D HIR 1 of 7 Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 Electrical Characteristics, at TA=25°C; unless otherwise specified Parameter Symbol Values min. max. Unit DC Characteristics Breakdown Voltage Drain to Source ID = 0.25mA, VGS = 0V BVDSS 250 - V Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS VGS(th) 2.0 4.0 V Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V IGSS - +/-100 nA Drain Current VDS = 200V, VGS = 0V IDSS - 25 µA Drain Source On Resistance 1) VGS = 10V, ID = 8A rDS(ON) - 0.13 Ω - 1.2 V Source Drain Diode, Forward Voltage 1), 2) VSD VGS = 0V, IS = 12.4A AC Characteristics Turn-on Delay Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω td(ON) - 25 ns Rise Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω tr - 25 ns Turn-off Delay Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω td(OFF) - 35 ns Fall Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω tf - 20 ns Reverse Recovery Time VDD < 50% VDS, ID = 12.4A trr - 400 ns Common Source Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Ciss 1.3 1.9 nF Common Source Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Coss 90 150 pF Common Source Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Crss 1 6 pF Total Gate Charge VDD = 50% VDS, VGS = 10V, ID = 12.4A QG - 42 nC Notes.: 1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%. 2) Measured within 2.0 mm of case. IFAG PMM RPD D HIR 2 of 7 Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 Electrical Characteristics at TA=125°C; unless otherwise specified Parameter Symbol Values min. max. Unit DC Characteristics Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS VGS(th) 1.5 - V Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V IGSS - +/-200 nA Drain Current VDS = 200V, VGS = 0V IDSS - 250 µA Drain Source On Resistance 1) VGS = 10V, ID = 8A rDS(ON) - 0.3 Ω Notes.: 1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%. Electrical Characteristics at TA=-55°C; unless otherwise specified Parameter Symbol Values min. max. - 5.0 Unit DC Characteristics Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS IFAG PMM RPD D HIR VGS(th) 3 of 7 V Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 1 Typ. output characteristics 2 Typ. output characteristics I D = f(V DS ); T j = 25 °C parameter: V GS I D = f(V DS ); T j = 150 °C parameter: V G 3 Typ. drain-source on-state resistance 4 Typ. drain-source on-state resistance R DS(on) = f(I D ); T j = 150 °C parameter: V GS R DS(on) = f(T j ) I D =8A IFAG PMM RPD D HIR 4 of 7 Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 5 Typ. transfer characteristics 6 Typ. gate threshold voltage I D = f(V GS ); |VDS| > 2 |I D | R DS(on)max parameter: T j I D =f(T j ) I D = 1mA 7 Typ. forward characteristics of reverse diode 8 Typ. drain-source breakdown voltage I F = f(V SD ) parameter: T j BV DSS = f(T j ) I D = 250µA IFAG PMM RPD D HIR 5 of 7 Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 9 Typ. capacitances 10 Typ. gate charge C = f(V DS ); V GS = 0 V; f = 1 MHz V GS = f(Q gate ); ID = 12.4 A pulsed parameter: V DD IFAG PMM RPD D HIR 6 of 7 Draft Aug 2014 WiP Data Sheet BUY25CS12K-01 TO-257AA Package 5.1 10.6 3.6 16.5 Edition 2014-08 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2014 All Rights Reserved. 10.6 13.5 1.0 16.0 1 2 3 [2.54] [2.54] 0.8 3.0 Dimensions are typical [mm] Caution This package contains beryllia. Therefore it must not be in any form machined, grinded, sanded, polished or any other mechanical operation which will produce dust and particles. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of a third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG PMM RPD D HIR 7 of 7 Draft Aug 2014