To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 3 2.6 ± 0.2 2 3 1 • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ...........50ns • Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 1 GATE 2 DRAIN 3 SOURCE 1 2 TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Conditions VGS = 0V VDS = 0V Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value Ratings Unit –30 ±20 V V –30 –120 –30 –30 –120 25 A A A A A W –55 ~ +150 –55 ~ +150 2000 °C °C V 2.0 g Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30KMJ-03 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V –30 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –5A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V –1.3 — — — –1.8 48 96 –0.72 –2.3 61 120 –0.92 V mΩ mΩ V — — — — 11.9 2460 410 170 — — — — S pF pF pF — — — — 20 84 123 60 — — — — ns ns ns ns — –1.0 –1.5 V — — — 50 5.00 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –15V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –15A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –15A, dis/dt = 50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) –102 40 30 20 10 0 0 –50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 50 100 150 tw = 10µs –7 –5 –3 –2 100µs –101 –7 –5 1ms –3 –2 10ms –100 DC TC = 25°C Single Pulse –7 –5 –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V –20 –7V –8V –40 –5V –30 Tc = 25°C Pulse Test –20 VGS = –10V –6V –10 –4V PD = 25W DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 –6V –5V –8V –16 –4V PD = 25W –12 Tc = 25°C Pulse Test –8 –3V –4 –3V 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30KMJ-03 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –3.0 ID = –50A –2.0 –30A –1.0 –15A 0 –50 –2 –4 –6 –8 102 –2 –4 –6 –8 7 5 4 3 2 75°C 125°C TC = 25°C 101 7 5 4 3 2 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 Tch = 25°C Ciss Coss Crss 102 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) VDS = –10V Pulse Test –100 –10 103 3 2 –10V 40 2 7 VGS = 0V 5 7 5 80 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 104 f = 1MHZ 3 2 VGS = –4V TRANSFER CHARACTERISTICS (TYPICAL) –10 2 120 DRAIN CURRENT ID (A) –20 0 160 GATE-SOURCE VOLTAGE VGS (V) –30 0 Tc = 25°C Pulse Test 0 –10–1 –2 –3 –5 –7–100 –2 –3 –5–7 –101 –2 –3 –5 –7–102 –10 Tc = 25°C VDS = –10V Pulse Test –40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) –4.0 0 DRAIN CURRENT ID (A) 200 Tc = 25°C Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Tch = 25°C 7 VGS = –10V 5 VDD = –15V 4 RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 4 3 tf tr td(on) 2 3 2 –3 –5–7–100 –2 –3 –5–7 –101 –2 3 –5–7 –102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) 101 –5 –7 –100 –2 –3 –5 –7–101 –2 –3 –5 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30KMJ-03 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) –6 –4 VDS = –10V –20V –25V –2 0 10 20 30 40 –20 –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VGS = –10V ID = 1/2ID Pulse Test 100 7 5 4 3 2 –50 0 50 100 VDS = –10V ID = –1mA –3.2 –2.4 –1.6 –0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 TC = 25°C 75°C 125°C GATE CHARGE Qg (nC) 2 10–1 –30 0 101 7 5 4 3 VGS = 0V Pulse Test –40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –50 Tch = 25°C ID = –30A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D=1 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10–1 0.05 0.02 0.01 Single Pulse 7 5 PDM tw T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999