To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-12A FL14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 600V ● rDS (ON) (MAX) .............................................................. 0.75Ω ● ID ......................................................................................... 14A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, Inverter type fluorescent light sets, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 600 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±30 14 42 V A A IDA PD Tch Tstg Viso Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 14 40 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions Limits Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V — 2.0 — — — 3.0 0.58 4.06 1 4.0 0.75 5.25 mA V Ω V — — — — 11 1600 210 80 — — — — S pF pF pF — — — — 30 60 290 120 — — — — ns ns ns ns — 1.5 2.0 V — — 3.13 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Sep. 2001