3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE 3N165, 3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 mA Storage Temperature -55ºC to +150ºC Operating Temperature -55ºC to +150ºC Lead Temperature (Soldering, 10 sec.) +300ºC Power Dissipation (One Side) 300 mW Total Derating above 25ºC 4.2 mW/ºC SOIC TOP VIEW TO-99 TOP VIEW ELECTRICAL CHARACTERISTICS (TA=25°C and VBS=0 unless otherwise noted) 3N165 & 3N166 SYMBOL CHARACTERISTIC MIN 3N165 & 3N166 MAX MIN MAX UNITS CONDITIONS IGSSR Gate Reverse Leakage Current -- 10 -- 100 VGS=40V IGSSF Gate Forward Leakage Current -- -10 -- -100 VGS=-40V -- -25 -- -- pA TA=+125ºC IDSS Drain to Source Leakage Current -- -200 -200 VDS=-20 V, VGS=VBS=0V ISDS Source to Drain Leakage Current -- -400 -- -400 VSD=-20 V, VGD=VDB=0V ID(on) On Drain Current -5 -30 -5 -30 mA VDS=-15V VGS=-10 V VSB=0V VGS(th) Gate Source Threshold Voltage -2 -5 -2 -5 V VDS=-15V ID=-10µA VSB=0V VGS(th) Gate Source Threshold Voltage -2 -5 -2 -5 V VDS=VGS ID=-10µA VSB=0V rDS(on) Drain Source ON Resistance 300 -- 300 gfs Forward Transconductance gos Output Admittance Clss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance RE(Yls) Common Source Forward Transconductance Linear Integrated Systems -- ohms VGS=-20V ID=-100µA VSB=0V 3000 1500 3000 µS VDS=-15V ID=-10mA f=1kHz -- 300 -- 300 µS -- 3.0 -- 3.0 -- 0.7 -- 1.0 -- 3.0 -- 3.0 1200 -- 1500 pF µS VSB=0V VDS=-15V ID=-10mA (NOTE 3) VSB=0V VDS=-15V ID=-10mA (NOTE 3) VSB=0V f=1MHz f=100MHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201138 09/11/2013 Rev#A8 ECN# 3N165 3N166 MATCHING CHARACTERISTICS 3N165 LIMITS SYMBOL CHARACTERISTIC MIN. MAX. UNITS Gfs1/Gfs2 Forward Transconductance Ratio 0.90 1.0 VGS1-2 Gate Source Threshold Voltage Differential -- 100 ΔVGS1-2/ΔT Gate Source Threshold Voltage Differential -- 100 CONDITIONS VDS=-15V ID=-500 µA f=1kHz VSB=0V VDS=-15V ID=-500 µA VSB=0V µV/ºC VDS=-15V ID=-500 µA VSB=0V mV Change with Temperature TA=-55ºC to = +125ºC TYPICAL SWITCHING WAVEFORM INPUT PULSE Rise Time≤2ns Pulse Width≥200ns SAMPLING SCOPE Tr≤0.2ns CIN≤2pF RIN≥10M Typical Switching Time Test Circuit Circuit NOTES: 1. MOS field effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures: To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove devices from circuits with the power on, as transient voltages may cause permanent damage to the devices. 2. Per transistor. 3. For design reference only, not 100% tested. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201138 09/11/2013 Rev#A8 ECN# 3N165 3N166