Linear Integrated Systems IT124 SUPER

IT124
SUPER-BETA
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT124
Pin for Pin Compatible
C1
C2
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
10mA
Maximum Temperatures
Storage Temperature Range
-65°C to +150°C
Operating Junction Temperature
-55°C to +150°C
Maximum Power Dissipation
ONE SIDE
B1
E1
E2
B2
BOTH SIDES
Device Dissipation TA=25°C
250mW
500mW
Linear Derating Factor
2.3mW/°C
4.3W/°C
TOP VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
IT124
BVCBO
Collector-Base Breakdown Voltage
2
MIN.
V
IC = 10µA
IE = 0A
BVCEO
Collector to Emitter Voltage
2
MIN.
V
IC = 10µA
IB = 0A
BVEBO
Emitter-Base Breakdown Voltage
6.2
MIN.
V
IE = 10µA
IC = 0A NOTE 2
BVCCO
Collector to Collector Voltage
50
MIN.
V
ICCO = 10µA
IB = IE = 0A
hFE
DC Current Gain
1500
MIN.
IC = 1µA
VCE = 1V
hFE
DC Current Gain
1500
MIN.
IC = 10µA
VCE = 1V
VCE(SAT)
Collector Saturation Voltage
0.5
MAX.
V
IC = 1mA
IB = 0.1mA
ICBO
Collector Cutoff Current
100
MAX.
pA
IE = 0
VCB = 1V
IEBO
Emitter Cutoff Current
100
IC = 0
VEB = 3V
Output Capacitance
2
MAX.
MAX.
pA
COBO
pF
IE = 0
VCB = 1V
2
MAX.
pF
VCC = 0
±500
MAX.
nA
VCCO = ±50V
IB = IE = 0A
100
MIN.
MHz
IC = 100µA
VCE = 1V
3
MAX.
dB
IC = 10µA
VCE = 3V
RG = 10 KΩ
f=1KHz
3
3
CC1C2
Collector to Collector Capacitance
IC1C2
Collector to Collector Leakage Current
fT
NF
Current Gain Bandwidth Product
Narrow Band Noise Figure
3
3
UNITS
CONDITIONS
BW = 200Hz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201156 9/27/2012 Rev#A4 ECN# IT124
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
IT124
│VBE1-VBE2│
Base Emitter Voltage Differential
2
TYP.
mV
5
MAX.
mV
5
TYP.
15
0.6
∆│(VBE1-VBE2)│/∆T
Base Emitter Voltage Differential
Change with Temperature
│IB1-IB2│
Base Current Differential
3
UNITS
CONDITIONS
IC = 10 µA
VCE = 1V
µV/°C
IC = 10 µA
VCE = 1V
MAX.
µV/°C
T = -55°C
MAX.
nA
IC = 10 µA
to
+125°C
VCE = 1V
C1
C2
B1
B2
E1
E2
N/C
N/C
0.210
0.170
C1
C2
B1
B2
E1
E2
N/C
N/C
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201156 9/27/2012 Rev#A4 ECN# IT124