3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS LS370, 71 3N170, 71 1 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation Continuous Power Dissipation 300mW Maximum Current Drain to Source 30mA Maximum Voltages Drain to Gate ±35V Drain to Source 25V Gate to Source ±35V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVDSS Drain to Source Breakdown Voltage VDS(on) Drain to Source "On" Voltage VGS(th) Gate to Source Threshold Voltage IGSS Gate Leakage Current IDSS Drain Leakage Current "Off" ID(on) Drain Current "On" gfs rds(on) TYP MAX 25 3N170 1.0 2.0 3N171 1.5 3.0 10 10 10 1000 Drain to Source "On" Resistance 200 Crss Reverse Transfer Capacitance 1.3 Ciss Input Capacitance 5.0 Cdb Drain to Body Capacitance 5.0 • CONDITIONS ID = 10µA, VGS = 0V 2.0 Forward Transconductance Linear Integrated Systems UNITS V ID = 10mA, VGS = 10V VDS = 10V, ID = 10µA pA VGS = -35V, VDS = 0V nA VDS = 10V, VGS = 0V mA VGS = 10V, VDS = 10V µS VDS = 10V, ID = 2.0mA, f = 1.0kHz Ω VGS = 10V, ID = 100µA, f = 1.0kHz VDS = 0V, VGS = 0V, f = 1.0MHz pF VDS = 10V, VGS = 0V, f = 1.0MHz VDB = 10V, f = 1.0MHz 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 6/06/12 Rev#A11 ECN# 3N170_3N171 SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC td(on) Turn On Delay Time 3.0 tr Turn On Rise Time 10 td(off) Turn Off Delay Time 3.0 Turn Off Fall Time 15 tf 1. MIN TYP MAX UNITS ns CONDITIONS VDD = 10V, IDD(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V RG = 50Ω Absolute maximum ratings are limiting values above which serviceability may be impaired. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 6/06/12 Rev#A11 ECN# 3N170_3N171