RENESAS 2SC4784

2SC4784
Silicon NPN Epitaxial
REJ03G0730-0300
(Previous ADE-208-1121A)
Rev.3.00
Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10 GHz Typ.
• High gain, low noise figure
PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK R )
3
1. Emitter
2. Base
3. Collector
1
2
Note:
Marking is “YA–”.
*CMPAK is a trademark of Renesas Technology Corp.
Attention: This is electrostatic sensitive device.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Symbol
VCBO
VCEO
Ratings
15
8
Unit
V
V
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
PC
Tj
Tstg
1.5
20
100
150
–55 to +150
V
mA
mW
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 8
2SC4784
Electrical Characteristics
(Ta = 25°C)
Item
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Rev.3.00 Aug 10, 2005 page 2 of 8
Symbol
ICBO
ICEO
IEBO
hFE
Cob
fT
PG
Min
—
—
—
50
—
7.0
12.0
Typ
—
—
—
120
0.45
10.0
15.0
Max
10
1
10
250
0.8
—
—
Unit
µA
mA
µA
pF
GHz
dB
NF
—
1.2
2.5
dB
Test conditions
VCB = 15 V, IE = 0
VCE = 8 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 10 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
2SC4784
Main Characteristics
DC Current Transfer Ratio
vs. Collector Current
200
120
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
80
60
40
20
0
50
100
160
120
VCE = 5V
80
VCE = 1V
40
0
0.1 0.2
150
Ambient Temperature Ta (°C)
8
6
VCE = 1 V
4
2
0
5
10
20
50
Collector Output Capacitance Cob (pF)
fT (GHz)
Gain Bandwidth Product
VCE = 5 V
2
5
10 20
50
Collector Output Capacitance vs.
Collector to Base Voltage
12
1
2
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
10
0.5 1
0.56
IE = 0
f = 1 MHz
0.52
0.48
0.44
0.40
0.36
0.5
2
1
5
10
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
20
5
f = 900 MHz
VCE = 5V
Noise Figure NF (dB)
(dB)
12
Power Gain
16
PG
f = 900 MHz
VCE = 1V
8
4
4
3
VCE = 5V
2
1
VCE = 1V
0
0
0.3
1
3
10
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 8
30
0.3
1
3
10
Collector Current IC (mA)
30
2SC4784
S11 Parameter vs. Frequency
.6
.8
1
S21 Parameter vs. Frequency
90°
1.5
120°
2
.4
Scale: 4 / div.
60°
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
0°
180°
–10
–5
–4
–3
–.2
–.4
–30°
–150°
–2
–.6
–.8 –1
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
–1.5
–120°
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
(I C = 5 mA)
(I C = 10 mA)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
60°
.8
.6
1
1.5
2
.4
3
150°
30°
0°
180°
4
5
10
.2
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–120°
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
Rev.3.00 Aug 10, 2005 page 4 of 8
–2
–.6
–1.5
–.8 –1
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
2SC4784
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
1
90°
.8
.6
1.5
120°
2
.4
Scale: 0.8 / div.
60°
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
0°
180°
–10
–5
–4
–3
–.2
–.4
–30°
–150°
–2
–.6
–.8
–1
S12 Parameter vs. Frequency
120°
S22 Parameter vs. Frequency
Scale: 0.06 / div.
.8
.6
60°
1
1.5
2
.4
30°
150°
–90°
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
90°
–60°
–120°
–1.5
3
4
5
.2
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
0°
180°
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–120°
–60°
–90°
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
Rev.3.00 Aug 10, 2005 page 5 of 8
–2
–.6
–1.5
–.8 –1
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
2SC4784
S Parameter
(VCE = 5 V, IC = 5 mA, ZO = 50 Ω, Emitter Common)
Freq.
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG.
0.850
0.781
0.689
0.598
0.523
0.450
0.394
0.348
0.306
0.278
0.243
0.219
0.203
0.190
0.167
0.171
0.161
0.160
0.167
0.170
S21
ANG.
–17.1
–33.0
–47.5
–58.8
–69.4
–78.8
–87.1
–95.3
–102.7
–109.3
–117.8
–125.4
–132.4
–143.7
–153.7
–163.2
–172.5
178.6
169.4
161.4
MAG.
13.203
12.116
10.894
9.620
8.489
7.534
6.760
6.129
5.550
5.113
4.716
4.342
4.057
3.804
3.580
3.391
3.207
3.051
2.921
2.788
S12
ANG.
164.8
151.3
139.0
129.5
121.6
115.1
109.9
105.1
100.7
97.4
94.0
91.0
88.5
85.9
83.8
81.1
79.2
77.1
75.0
73.1
MAG.
0.018
0.035
0.049
0.060
0.069
0.076
0.083
0.088
0.095
0.101
0.107
0.113
0.118
0.124
0.130
0.136
0.143
0.149
0.155
0.161
S22
ANG.
80.4
72.0
65.9
62.2
59.5
57.9
57.1
57.0
56.6
56.8
57.0
56.8
57.1
57.4
57.5
57.8
57.7
57.3
57.6
57.5
MAG.
0.965
0.898
0.815
0.735
0.667
0.610
0.563
0.523
0.493
0.467
0.445
0.428
0.416
0.401
0.390
0.380
0.371
0.364
0.356
0.349
ANG.
–10.5
–19.9
–27.5
–32.8
–36.4
–38.9
–40.6
–42.1
–42.7
–43.5
–44.2
–44.3
–45.1
–45.5
–45.9
–46.6
–47.0
–47.6
–48.3
–48.9
S Parameter
(VCE = 5 V, IC = 10 mA, ZO = 50 Ω, Emitter Common)
Freq.
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
S11
S21
MAG.
0.730
0.622
0.508
0.417
0.349
0.295
0.256
0.223
0.195
0.183
0.173
0.154
0.158
ANG.
–25.1
–46.7
–64.4
–77.8
–89.5
–100.6
–110.7
–120.6
–129.7
–140.7
–151.8
–160.4
–171.4
MAG.
20.636
17.551
14.512
12.064
10.223
8.803
7.735
6.899
6.178
5.644
5.167
4.743
4.423
ANG.
158.3
140.7
127.1
118.0
111.0
105.3
101.0
97.1
93.5
90.7
88.0
85.5
83.5
MAG.
0.017
0.031
0.041
0.049
0.057
0.064
0.070
0.077
0.084
0.091
0.098
0.105
0.112
ANG.
77.3
69.3
64.0
62.8
62.1
62.1
62.9
63.4
63.6
63.8
64.3
64.6
64.5
MAG.
0.929
0.808
0.689
0.600
0.534
0.487
0.451
0.423
0.403
0.385
0.372
0.361
0.353
ANG.
–15.0
–26.3
–33.0
–36.8
–38.7
–39.2
–39.3
–39.6
–39.4
–39.5
–39.6
–39.6
–40.0
1400
1500
1600
1700
1800
1900
2000
0.158
0.157
0.165
0.172
0.176
0.187
0.194
177.6
165.9
160.7
154.4
147.9
140.9
136.0
4.121
3.866
3.648
3.460
3.277
3.129
2.982
81.4
79.1
77.0
75.1
73.7
71.6
69.8
0.119
0.126
0.133
0.141
0.148
0.155
0.162
64.8
64.7
64.2
64.1
63.9
63.7
63.2
0.345
0.338
0.332
0.327
0.321
0.317
0.312
–40.3
–40.6
–41.0
–41.8
–42.3
–42.8
–43.5
Rev.3.00 Aug 10, 2005 page 6 of 8
S12
S22
2SC4784
S Parameter
(VCE = 1 V, IC = 0.5 mA, ZO = 50 Ω, Emitter Common)
Freq.
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG.
0.983
0.975
0.957
0.933
0.910
0.879
0.845
0.804
0.778
0.739
0.706
0.671
0.643
0.609
0.573
0.553
0.531
0.516
0.485
0.466
S21
ANG.
–6.8
–13.4
–20.2
–26.9
–33.2
–39.5
–45.8
–51.4
–57.3
–62.9
–68.6
–73.0
–78.5
–84.4
–88.6
–94.4
–100.1
–103.8
–109.6
–114.5
MAG.
1.755
1.721
1.722
1.706
1.629
1.597
1.553
1.528
1.475
1.432
1.392
1.317
1.286
1.261
1.215
1.186
1.158
1.128
1.098
1.070
S12
ANG.
173.2
166.6
159.4
152.9
146.3
139.8
134.0
128.1
122.6
117.8
112.7
107.8
104.8
100.0
96.4
92.6
88.8
85.7
82.5
78.9
MAG.
0.027
0.055
0.082
0.107
0.130
0.151
0.170
0.187
0.203
0.215
0.227
0.237
0.245
0.252
0.258
0.263
0.267
0.272
0.273
0.275
S22
ANG.
84.6
79.9
75.0
70.6
66.2
61.9
58.1
54.4
51.1
47.6
44.9
42.1
39.7
37.3
35.3
33.1
31.1
29.1
27.7
26.1
MAG.
0.995
0.987
0.974
0.956
0.937
0.913
0.890
0.862
0.838
0.813
0.790
0.767
0.745
0.723
0.702
0.683
0.667
0.650
0.634
0.619
ANG.
–4.5
–8.8
–13.3
–17.7
–21.4
–25.4
–28.9
–32.4
–35.2
–38.4
–41.1
–43.5
–46.1
–48.5
–50.4
–52.6
–54.5
–56.5
–58.4
–60.3
S Parameter
(VCE = 1 V, IC = 1 mA, ZO = 50 Ω, Emitter Common)
Freq.
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
MAG.
0.962
0.950
0.919
0.885
0.839
0.797
0.748
0.701
0.664
0.625
0.577
0.545
0.515
S11
ANG.
–8.8
–17.5
–26.2
–33.8
–41.8
–49.5
–56.3
–63.3
–69.9
–75.7
–82.3
–87.7
–93.8
MAG.
3.376
3.268
3.223
3.139
2.969
2.833
2.699
2.611
2.473
2.363
2.254
2.109
2.011
S21
ANG.
172.0
164.5
156.2
148.7
141.8
135.1
129.2
123.2
117.9
113.1
108.3
104.2
101.3
MAG.
0.027
0.054
0.080
0.102
0.123
0.141
0.157
0.169
0.181
0.190
0.198
0.205
0.210
ANG.
83.7
78.2
72.6
67.2
62.2
58.1
54.5
51.1
47.9
45.2
43.0
40.7
39.1
MAG.
0.991
0.975
0.951
0.920
0.887
0.851
0.815
0.776
0.743
0.710
0.680
0.655
0.633
ANG.
–5.9
–11.4
–17.2
–22.4
–26.8
–31.2
–35.1
–38.7
–41.8
–44.7
–47.3
–49.3
–51.8
1400
1500
1600
1700
1800
1900
2000
0.475
0.446
0.421
0.403
0.387
0.366
0.354
–100.5
–105.5
–111.6
–117.9
–122.1
–129.0
–135.7
1.946
1.863
1.800
1.732
1.663
1.614
1.554
97.0
93.7
90.1
87.2
84.4
81.6
78.6
0.215
0.219
0.222
0.225
0.229
0.230
0.232
37.5
36.2
34.6
33.7
32.2
31.7
31.0
0.606
0.584
0.563
0.545
0.528
0.512
0.498
–54.0
–55.7
–57.7
–59.2
–60.9
–62.7
–64.1
Rev.3.00 Aug 10, 2005 page 7 of 8
S12
S22
2SC4784
Package Dimensions
JEITA Package Code
RENESAS Code
SC-70
Package Name
PTSP0003ZA-A
D
MASS[Typ.]
CMPAK / CMPAKV
0.006g
A
e
Q
c
E
HE
LP
L
A
A
x M
L1
S
A3
Reference
Symbol
b
A
e
A2
A
A1
S
e1
b
b1
l1
c1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
c
c1
D
E
e
HE
L
L1
LP
x
b2
e1
l1
Q
Dimension in Millimeters
Min
0.8
0
0.8
0.25
0.1
1.8
1.15
1.8
0.3
0.1
0.2
Nom
0.9
0.25
0.32
0.3
0.13
0.11
2.0
1.25
0.65
2.1
Max
1.1
0.1
1.0
0.4
0.15
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.45
1.5
0.9
0.2
Ordering Information
Part Name
2SC4784YA-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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