RENESAS 2SC5628

2SC5628
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
REJ03G0750-0300
(Previous ADE-208-979A)
Rev.3.00
Aug.10.2005
Features
• Super compact package;
(1.4 × 0.8 × 0.59mm)
• High power gain and low noise figure;
(PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)
Outline
RENESAS Package code: PUSF0003ZA-A
(Package name: MFPAK R )
3
1. Emitter
2. Base
3. Collector
1
2
Note: Marking is “XZ-”.
*MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Symbol
VCBO
VCEO
VEBO
Ratings
15
8
1.5
Unit
V
V
V
Collector current
Collector power dissipation
IC
Pc
50
80
mA
mW
Tj
Tstg
150
–55 to +150
°C
°C
Junction temperature
Storage temperature
Rev.3.00 Aug 10, 2005 page 1 of 9
2SC5628
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cob
Min
15
—
—
—
80
—
Typ
—
—
—
—
100
0.55
Max
—
0.2
1
1
160
0.85
Unit
V
µA
µA
µA
Gain bandwidth product
Power gain
fT
PG
6
11
9
14
—
—
GHz
dB
Noise figure
NF
—
1.1
2.0
dB
Rev.3.00 Aug 10, 2005 page 2 of 9
pF
Test Conditions
IC = 10µA , IE = 0
VCB = 12V , IE = 0
VCE = 8V , RBE = ∞
VEB = 1.5V , IC = 0
VCE = 1V , IC = 5mA
VCB = 1V , IE = 0
f = 1MHz
VCE = 1V , IC = 5mA
VCE = 1V, IC = 5mA
f = 900MHz
VCE = 1V, IC = 5mA
f = 900MHz
2SC5628
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
200
DC Current Transfer Ratio hFE
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
150
100
50
VCE = 5 V
3V
100
1V
0
0
50
100
150
200
1
(GHz)
2.0
IE = 0
f = 1MHz
20
50
100
20
fT
16
VCE = 3 to 5V
Gain Bandwidth Product
Cob (pF)
Collector Output Capacitance
10
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
1.2
0.8
0.4
0
0.1
0.2
0.5
1
2
12
1V
8
4
0
10
5
1
5
10
20
50
100
Collector Current IC (mA)
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
5
f = 900MHz
16
VCE = 5 V
3V
12
1V
8
4
Noise Figure NF (dB)
f = 900MHz
0
1
2
Collector to Base Voltage VCB (V)
20
Power Gain PG (dB)
5
Collector Current IC (mA)
Ambient Temperature Ta (°C)
1.6
2
4
3
VCE = 1 V to 5V
2
1
0
2
5
10
20
50
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 9
100
1
2
5
10
20
50
Collector Current IC (mA)
100
2SC5628
S 21 Parameter vs. Collector Current
20
S21 Parameter |S21| 2 (dB)
f = 1GHz
VCE = 5 V
16
3V
12
1V
8
4
0
1
2
5
10
20
50
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 9
100
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 5 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
−10
−5
−4
−.2
−3
−.4
−30°
−150°
−2
−.6
−.8
−1
−60°
−120°
−1.5
−90°
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.08 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30°
−150°
−3
−.4
−120°
−60°
−90°
−2
−.6
−.8
−1
−1.5
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
Rev.3.00 Aug 10, 2005 page 5 of 9
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 5 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
−10
−5
−4
−.2
−3
−.4
−30°
−150°
−2
−.6
−.8
−1
−60°
−120°
−1.5
−90°
Condition : V CE = 3 V , I C = 5mA
Condition : V CE = 3 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.08 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30°
−150°
−3
−.4
−120°
−60°
−90°
−2
−.6
−.8
−1
−1.5
Condition : V CE = 3 V , I C = 5mA
Condition : V CE = 3 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
Rev.3.00 Aug 10, 2005 page 6 of 9
2SC5628
Sparameter
(VCE = 1V, IC = 5mA, Zo = 50Ω)
S11
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
MAG
0.815
0.734
0.692
0.665
0.650
0.644
0.640
0.641
0.638
0.638
0.643
0.643
0.648
0.651
0.658
0.663
0.667
0.669
0.673
0.682
S21
ANG
–46.1
–84.6
–111.2
–127.4
–139.6
–148.8
–155.6
–161.6
–166.9
–171.6
–175.1
–178.5
178.5
175.4
173.2
170.0
167.2
165.0
163.1
161.0
Rev.3.00 Aug 10, 2005 page 7 of 9
MAG
13.63
10.68
8.23
6.58
5.44
4.61
4.03
3.56
3.20
2.90
2.66
2.46
2.28
2.15
2.03
1.92
1.82
1.74
1.67
1.60
S12
ANG
152.2
130.6
116.8
107.9
101.4
96.3
92.2
88.6
85.3
82.2
79.6
77.2
74.9
72.8
70.5
68.5
66.7
64.4
63.2
61.4
MAG
0.0509
0.0834
0.0998
0.108
0.114
0.120
0.124
0.128
0.134
0.138
0.143
0.149
0.154
0.161
0.168
0.174
0.182
0.189
0.196
0.204
S22
ANG
67.0
51.0
42.9
39.5
38.0
38.3
39.0
39.9
41.8
43.5
44.4
46.2
47.8
49.1
50.9
51.8
53.2
54.6
55.5
56.4
MAG
0.882
0.695
0.550
0.459
0.399
0.360
0.333
0.315
0.301
0.292
0.286
0.280
0.279
0.278
0.277
0.279
0.281
0.282
0.286
0.289
ANG
–32.5
–58.5
–76.0
–88.5
–98.1
–105.7
–112.2
–117.8
–122.4
–126.7
–130.2
–133.6
–135.6
–138.6
–140.9
–143.3
–145.0
–147.1
–149.3
–150.6
2SC5628
Sparameter
(VCE = 3V, IC = 5mA, Zo = 50Ω)
S11
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
MAG
0.826
0.746
0.685
0.646
0.627
0.617
0.606
0.598
0.605
0.604
0.604
0.607
0.605
0.608
0.618
0.622
0.627
0.629
0.633
0.641
S21
ANG
–39.3
–74.6
–100.5
–117.4
–130.7
–141.0
–149.0
–155.4
–161.3
–166.1
–170.6
–174.2
–178.2
178.9
175.5
172.4
170.0
166.9
164.3
162.3
Rev.3.00 Aug 10, 2005 page 8 of 9
MAG
14.04
11.47
9.14
7.41
6.19
5.27
4.61
4.09
3.67
3.35
3.06
2.83
2.62
2.47
2.32
2.19
2.08
1.99
1.90
1.82
S12
ANG
155.5
134.9
121.1
111.9
104.8
99.6
95.0
91.6
87.7
84.7
81.8
79.5
77.1
74.9
72.7
70.7
68.9
66.7
65.2
63.4
MAG
0.0412
0.0700
0.0864
0.0950
0.101
0.107
0.111
0.115
0.120
0.124
0.129
0.134
0.139
0.145
0.152
0.157
0.164
0.171
0.177
0.186
S22
ANG
69.9
54.9
46.7
43.0
41.3
41.3
41.6
42.5
44.3
45.6
46.8
49.0
50.4
51.9
53.4
54.8
56.2
57.6
58.7
59.5
MAG
0.906
0.738
0.591
0.490
0.419
0.369
0.333
0.307
0.287
0.273
0.262
0.253
0.249
0.245
0.242
0.241
0.241
0.242
0.243
0.245
ANG
–25.8
–47.3
–61.9
–71.9
–79.9
–85.7
–90.7
–95.3
–99.0
–102.6
–106.0
–108.8
–111.0
–114.3
–116.6
–118.9
–121.3
–123.4
–125.9
–127.7
2SC5628
Package Dimensions
JEITA Package Code
RENESAS Code
SC-89 Modified
Package Name
PUSF0003ZA-A
D
MASS[Typ.]
MFPAK / MFPAKV
0.0016g
A
e
c
LP
E
HE
L
A
A
b
x M S
e
A
Reference
Symbol
A2
A
e1
A1
b
b1
S
I1
c1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
b
b1
c
c1
D
E
e
HE
L
LP
x
b2
e1
I1
Dimension in Millimeters
Min
0.55
0
0.55
0.15
0.1
1.35
0.7
1.15
0.1
0.15
Nom
0.22
0.2
0.13
0.11
1.4
0.8
0.45
1.2
0.2
Max
0.6
0.01
0.59
0.3
0.15
1.45
0.9
1.25
0.3
0.45
0.05
0.35
0.75
0.5
Ordering Information
Part Name
2SC5628XZ-TL-E
Quantity
9000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 9 of 9
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Colophon .3.0