2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 (Previous ADE-208-979A) Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “XZ-”. *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Symbol VCBO VCEO VEBO Ratings 15 8 1.5 Unit V V V Collector current Collector power dissipation IC Pc 50 80 mA mW Tj Tstg 150 –55 to +150 °C °C Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 9 2SC5628 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob Min 15 — — — 80 — Typ — — — — 100 0.55 Max — 0.2 1 1 160 0.85 Unit V µA µA µA Gain bandwidth product Power gain fT PG 6 11 9 14 — — GHz dB Noise figure NF — 1.1 2.0 dB Rev.3.00 Aug 10, 2005 page 2 of 9 pF Test Conditions IC = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 8V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz VCE = 1V, IC = 5mA f = 900MHz 2SC5628 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 200 DC Current Transfer Ratio hFE Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 50 VCE = 5 V 3V 100 1V 0 0 50 100 150 200 1 (GHz) 2.0 IE = 0 f = 1MHz 20 50 100 20 fT 16 VCE = 3 to 5V Gain Bandwidth Product Cob (pF) Collector Output Capacitance 10 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 1.2 0.8 0.4 0 0.1 0.2 0.5 1 2 12 1V 8 4 0 10 5 1 5 10 20 50 100 Collector Current IC (mA) Power Gain vs. Collector Current Noise Figure vs. Collector Current 5 f = 900MHz 16 VCE = 5 V 3V 12 1V 8 4 Noise Figure NF (dB) f = 900MHz 0 1 2 Collector to Base Voltage VCB (V) 20 Power Gain PG (dB) 5 Collector Current IC (mA) Ambient Temperature Ta (°C) 1.6 2 4 3 VCE = 1 V to 5V 2 1 0 2 5 10 20 50 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 9 100 1 2 5 10 20 50 Collector Current IC (mA) 100 2SC5628 S 21 Parameter vs. Collector Current 20 S21 Parameter |S21| 2 (dB) f = 1GHz VCE = 5 V 16 3V 12 1V 8 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 9 100 2SC5628 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 5 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 −60° −120° −1.5 −90° Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.08 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° −2 −.6 −.8 −1 −1.5 Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) Rev.3.00 Aug 10, 2005 page 5 of 9 2SC5628 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 5 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 −60° −120° −1.5 −90° Condition : V CE = 3 V , I C = 5mA Condition : V CE = 3 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.08 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° −2 −.6 −.8 −1 −1.5 Condition : V CE = 3 V , I C = 5mA Condition : V CE = 3 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) Rev.3.00 Aug 10, 2005 page 6 of 9 2SC5628 Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.815 0.734 0.692 0.665 0.650 0.644 0.640 0.641 0.638 0.638 0.643 0.643 0.648 0.651 0.658 0.663 0.667 0.669 0.673 0.682 S21 ANG –46.1 –84.6 –111.2 –127.4 –139.6 –148.8 –155.6 –161.6 –166.9 –171.6 –175.1 –178.5 178.5 175.4 173.2 170.0 167.2 165.0 163.1 161.0 Rev.3.00 Aug 10, 2005 page 7 of 9 MAG 13.63 10.68 8.23 6.58 5.44 4.61 4.03 3.56 3.20 2.90 2.66 2.46 2.28 2.15 2.03 1.92 1.82 1.74 1.67 1.60 S12 ANG 152.2 130.6 116.8 107.9 101.4 96.3 92.2 88.6 85.3 82.2 79.6 77.2 74.9 72.8 70.5 68.5 66.7 64.4 63.2 61.4 MAG 0.0509 0.0834 0.0998 0.108 0.114 0.120 0.124 0.128 0.134 0.138 0.143 0.149 0.154 0.161 0.168 0.174 0.182 0.189 0.196 0.204 S22 ANG 67.0 51.0 42.9 39.5 38.0 38.3 39.0 39.9 41.8 43.5 44.4 46.2 47.8 49.1 50.9 51.8 53.2 54.6 55.5 56.4 MAG 0.882 0.695 0.550 0.459 0.399 0.360 0.333 0.315 0.301 0.292 0.286 0.280 0.279 0.278 0.277 0.279 0.281 0.282 0.286 0.289 ANG –32.5 –58.5 –76.0 –88.5 –98.1 –105.7 –112.2 –117.8 –122.4 –126.7 –130.2 –133.6 –135.6 –138.6 –140.9 –143.3 –145.0 –147.1 –149.3 –150.6 2SC5628 Sparameter (VCE = 3V, IC = 5mA, Zo = 50Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.826 0.746 0.685 0.646 0.627 0.617 0.606 0.598 0.605 0.604 0.604 0.607 0.605 0.608 0.618 0.622 0.627 0.629 0.633 0.641 S21 ANG –39.3 –74.6 –100.5 –117.4 –130.7 –141.0 –149.0 –155.4 –161.3 –166.1 –170.6 –174.2 –178.2 178.9 175.5 172.4 170.0 166.9 164.3 162.3 Rev.3.00 Aug 10, 2005 page 8 of 9 MAG 14.04 11.47 9.14 7.41 6.19 5.27 4.61 4.09 3.67 3.35 3.06 2.83 2.62 2.47 2.32 2.19 2.08 1.99 1.90 1.82 S12 ANG 155.5 134.9 121.1 111.9 104.8 99.6 95.0 91.6 87.7 84.7 81.8 79.5 77.1 74.9 72.7 70.7 68.9 66.7 65.2 63.4 MAG 0.0412 0.0700 0.0864 0.0950 0.101 0.107 0.111 0.115 0.120 0.124 0.129 0.134 0.139 0.145 0.152 0.157 0.164 0.171 0.177 0.186 S22 ANG 69.9 54.9 46.7 43.0 41.3 41.3 41.6 42.5 44.3 45.6 46.8 49.0 50.4 51.9 53.4 54.8 56.2 57.6 58.7 59.5 MAG 0.906 0.738 0.591 0.490 0.419 0.369 0.333 0.307 0.287 0.273 0.262 0.253 0.249 0.245 0.242 0.241 0.241 0.242 0.243 0.245 ANG –25.8 –47.3 –61.9 –71.9 –79.9 –85.7 –90.7 –95.3 –99.0 –102.6 –106.0 –108.8 –111.0 –114.3 –116.6 –118.9 –121.3 –123.4 –125.9 –127.7 2SC5628 Package Dimensions JEITA Package Code RENESAS Code SC-89 Modified Package Name PUSF0003ZA-A D MASS[Typ.] MFPAK / MFPAKV 0.0016g A e c LP E HE L A A b x M S e A Reference Symbol A2 A e1 A1 b b1 S I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Dimension in Millimeters Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.75 0.5 Ordering Information Part Name 2SC5628XZ-TL-E Quantity 9000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 9 of 9 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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