2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z (Previous ADE-208-013A (Z) ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz Outline CMPAK–4 2 3 1 4 Note: 1. Collector 2. Emitter 3. Base 4. Emitter Marking is “YD–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Rev.3.00, Apr.05.2004, page 1 of 9 2SC4995 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO Collector cutoff current ICBO ICEO Emitter cutoff current IEBO DC current transfer ratio hFE Collector output capacitance Cob Gain bandwidth product fT S21 Parameter |S21| 15 — — — 50 — 8.0 — — — — — 120 0.55 11.0 16 — 10 1 10 250 1.1 — — V µA mA µA pF GHz dB Power gain PG 13.5 16.5 — dB Noise figure NF — 1.1 2.0 dB IC = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00, Apr.05.2004, page 2 of 9 2SC4995 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 120 DC Current Transfer Ratio h FE Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 VCE = 5V 160 80 120 60 40 20 0 80 40 0 1 50 100 150 Ambient Temperature Ta (°C) Collector Output Capacitance Cob (pF) Gain Bandwidth Product f T (GHz) 12 VCE = 5 V 10 8 VCE = 1 V 6 4 2 0 2 5 10 20 Collector Current I C (mA) 50 0.9 IE = 0 f = 1 MHz 0.8 0.7 0.6 0.5 0.4 0.5 Power Gain vs. Collector Current 1 2 5 10 20 Collector to Base Voltage V CB (V) Noise Figure vs. Collector Current 20 5 VCE = 5V f = 900MHz VCE = 5V f = 900 MHz NF (dB) 16 Power Gain PG (dB) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1 2 5 10 20 Collector Current I C (mA) Noise Figure 12 8 4 0 4 3 2 1 0 1 2 5 10 20 Collector Current I C (mA) Rev.3.00, Apr.05.2004, page 3 of 9 50 1 5 10 20 2 Collector Current I C (mA) 50 2SC4995 S21 Parameter vs. Collector Current 20 (dB) f = 1 GHz VCE = 5V |S21 | 16 S 21 Parameter 12 VCE = 1V 8 4 0 1 2 5 10 20 Collector Current I C (mA) Rev.3.00, Apr.05.2004, page 4 of 9 50 2SC4995 S11 Parameter vs. Frequency .8 1 .6 S21 Parameter vs. Frequency 90° 1.5 Scale: 5 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00, Apr.05.2004, page 5 of 9 –2 –.6 –.8 –1 –1.5 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 2SC4995 S11 Parameter vs. Frequency .8 1 .6 S21 Parameter vs. Frequency 90° 1.5 Scale: 5 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00, Apr.05.2004, page 6 of 9 –2 –.6 –.8 –1 –1.5 Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 2SC4995 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 400 600 800 1000 1200 1400 1600 1800 2000 0.781 0.669 0.591 0.549 0.524 0.520 0.515 0.518 0.523 0.537 –48.2 –83.6 –109.4 –129.1 –145.0 –156.8 –166.9 –176.0 176.5 170.1 12.84 10.04 7.84 6.30 5.23 4.45 3.86 3.44 3.11 2.82 148.8 127.3 113.9 104.4 96.7 90.7 86.0 81.1 77.3 73.5 0.0449 0.0695 0.0815 0.0889 0.0937 0.0986 0.103 0.107 0.111 0.116 64.6 50.3 42.6 39.2 38.4 37.7 38.7 40.0 41.2 42.4 0.866 0.682 0.541 0.446 0.381 0.340 0.309 0.287 0.268 0.256 –28.6 –46.9 –58.1 –65.2 –70.4 –74.6 –77.7 –81.2 –85.1 –89.0 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 400 600 800 1000 1200 1400 1600 1800 2000 0.542 0.520 0.516 0.519 0.525 0.538 0.540 0.554 0.567 0.580 –69.9 –136.2 –156.3 –169.1 –179.2 173.6 167.5 161.6 159.5 151.7 24.74 15.31 10.81 8.29 6.70 5.63 4.85 4.29 3.86 3.48 128.7 109.4 99.5 93.5 88.5 84.1 80.9 77.5 74.3 71.6 0.0296 0.0398 0.0470 0.0547 0.0624 0.0712 0.0805 0.0895 0.0991 0.109 55.5 50.2 52.8 55.1 57.9 60.2 61.5 62.8 63.8 64.3 0.631 0.395 0.285 0.225 0.189 0.166 0.151 0.140 0.134 0.129 –52.5 –72.9 –83.6 –91.3 –97.5 –102.8 –107.9 –112.6 –118.1 –122.5 Rev.3.00, Apr.05.2004, page 7 of 9 2SC4995 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 400 600 800 1000 1200 1400 1600 1800 2000 0.739 0.643 0.603 0.586 0.578 0.580 0.588 0.596 0.607 0.617 –65.4 –106.5 –132.0 –148.7 –162.1 –171.9 179.9 172.9 166.8 161.0 11.99 8.54 6.34 4.99 4.08 3.45 2.99 2.67 2.41 2.20 140.8 118.9 106.4 97.9 90.9 86.0 81.7 77.2 73.4 70.0 0.0681 0.0957 0.107 0.114 0.118 0.124 0.129 0.134 0.139 0.145 56.9 41.5 34.9 32.6 32.6 32.7 33.3 34.3 35.9 36.9 0.793 0.576 0.446 0.369 0.323 0.396 0.275 0.263 0.256 0.254 –44.9 –72.1 –89.4 –101.9 –112.0 –120.1 –127.0 –133.0 –139.5 –144.7 S Parameter (VCE = 1 V, IC = 20 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 400 600 800 1000 1200 1400 1600 1800 2000 0.588 0.618 0.627 0.639 0.650 0.656 0.664 0.677 0.689 0.696 –127.7 –157.6 –171.4 179.6 172.1 –166.4 160.7 156.5 151.6 147.5 19.25 11.00 7.62 5.80 4.66 3.94 3.40 3.03 2.71 2.47 119.0 102.5 94.6 89.2 84.5 81.1 78.2 75.2 71.9 69.2 0.0389 0.0483 0.0570 0.0662 0.0768 0.873 0.0996 0.110 0.122 0.134 47.2 45.3 49.0 52.6 55.9 57.7 59.2 60.2 61.1 61.2 0.527 0.380 0.334 0.315 0.306 0.302 0.301 0.301 0.304 0.306 –86.7 –120.8 –139.3 –150.9 –158.9 –165.4 –170.5 –174.6 –178.4 178.2 Rev.3.00, Apr.05.2004, page 8 of 9 2SC4995 Package Dimensions As of January, 2003 Unit: mm 0.1 0.3 +– 0.05 0.2 0.65 0.6 1.25 ± 0.2 0.9 ± 0.1 0.1 0.4 +– 0.05 0 – 0.1 0.425 0.1 0.3 +– 0.05 + 0.1 0.16– 0.06 2.1 ± 0.3 0.65 0.65 1.25 ± 0.1 0.1 0.3 +– 0.05 0.425 2.0 ± 0.2 1.3 ± 0.2 Package Code JEDEC JEITA Mass (reference value) CMPAK-4(T) — Conforms 0.006 g Ordering Information Part Name Quantity Shipping Container 2SC4995 3000 pcs φ178 mm Taping Reel (TL) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Apr.05.2004, page 9 of 9 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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