RENESAS HAT2058RJ

HAT2058R, HAT2058RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1174-0200
(Previous: ADE-208-934)
Rev.2.00
Sep 07, 2005
Features
•
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
MOS1
Rev.2.00 Sep 07, 2005 page 1 of 7
5 6
D D
S3
MOS2
Source
Gate
Drain
HAT2058R, HAT2058RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Value
HAT2058R
HAT2058RJ
Symbol
Drain to source voltage
Gate to source voltage
VDSS
VGSS
Drain current
Drain peak current
ID
Unit
100
±20
100
±20
V
V
4
32
4
32
A
A
4
—
4
4
A
A
Note 4
—
2
1.6
2
mJ
W
Note 3
3
150
3
150
W
°C
Note 2
ID (pulse)
Note 1
Body-drain diode reverse drain current
Avalanche current
IDR
Note 4
IAP
Avalanche energy
Channel dissipation
EAR
Note 2
Pch
Channel temperature
Pch
Tch
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
100
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
Test Conditions
Zero gate voltage drain
current
HAT2058R
HAT2058RJ
IDSS
IDSS
—
—
—
—
1
0.1
µA
µA
VDS = 100 V, VGS = 0
Zero gate voltage drain
current
HAT2058R
HAT2058RJ
IDSS
IDSS
—
—
—
—
—
10
µA
µA
VDS = 80 V, VGS = 0
Ta = 125°C
IGSS
VGS (off)
—
1.0
—
—
±10
2.5
µA
V
VGS = ±16 V, VDS = 0
VDS = 10 V, ID = 1 mA
|yfs|
5
120
—
145
S
mΩ
ID = 2 A, VDS = 10 V
Note 5
ID = 2 A, VGS = 10 V
ID = 2 A, VGS = 4 V
VDS = 10 V, VGS = 0
f = 1 MHz
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
RDS (on)
3
—
Input capacitance
RDS (on)
Ciss
—
—
150
420
180
—
mΩ
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
180
100
—
—
pF
pF
Turn-on delay time
Rise time
td (on)
tr
—
—
10
30
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
110
60
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.85
75
1.1
—
V
ns
Note:
5. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
Note 5
Note 5
VGS = 10 V, ID = 2 A,
VDD ≅ 30 V
IF = 4 A, VGS = 0
IF = 4 A, VGS = 0
diF/dt = 50 A/µs
Note 5
HAT2058R, HAT2058RJ
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
3.0
ive
ive
Op
ion
at
1.0
Dr
er
Op
1
0
Drain Current
Dr
2.0
er
0
50
at
ion
100
200
150
Ambient Temperature
10 µs
30
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2
Channel Dissipation
Pch (W)
4.0
10
10
PW
D
C
3
O
pe
1
=
ra
1
m
0
µs
s
10
m
tio
s
n
Operation in
(
PW N
0.3
this area is
≤ ote 6
10
0.1 limited by RDS (on)
s)
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3 1
3
10 30 100 300 1000
Drain to Source Voltage
Ta (°C)
VDS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
20
10
Pulse Test
VDS = 10 V
Pulse Test
(A)
(A)
10 V
16
8
ID
4V
12
6
Drain Current
Drain Current
ID
6V
8
4
4
25°C
2
Tc = 75°C
VGS = 2 V
–25°C
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.8
0.6
ID = 4 A
0.4
2A
0.2
1A
0
0
4
8
12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
1.0
1
0.5
0.2
VGS = 4 V
0.1
10 V
0.05
0.02
Pulse Test
0.01
0.1 0.2
0.5 1
2
Drain Current
5
10 20
ID (A)
50
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT2058R, HAT2058RJ
0.5
Pulse Test
0.4
4A
0.3
ID = 1 A, 2 A
VGS = 4 V
0.2
4A
1 A, 2 A
0.1
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
VDS = 10 V
Pulse Test
0.5
0.1
0.3
2000
Capacitance C (pF)
500
200
100
50
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
3
10
30
100
100
Coss
50
Crss
20
30
40
50
VGS
12
8
80
40
4
VDD = 80 V
50 V
25 V
0
8
16
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 7
24
0
32
Qg (nc)
40
1000
Switching Time t (ns)
16
VDS
0
200
Switching Characteristics
VDD = 80 V
50 V
25 V
120
Ciss
Dynamic Input Characteristics
ID = 4 A
160
500
Drain to Source Voltage VDS (V)
20
200
100
Reverse Drain Current IDR (A)
VGS (V)
VDS (V)
Drain to Source Voltage
1
30
1000
20 VGS = 0
f = 1 MHz
10
0
10
Gate to Source Voltage
Reverse Recovery Time trr (ns)
5000
0.3
10
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
20
1
300
td(off)
100
30
tf
tr
td(on)
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2058R, HAT2058RJ
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
Pulse Test
8
6
10 V
VGS = 0, –5 V
4
5V
2
0
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
IAP = 4 A
VDD = 50 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
2.0
1.5
1.0
0.5
0
25
50
75
100
125
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
lse
0.001
D=
PDM
u
tp
ho
1s
0.0001
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Normalized Transient Thermal Impedance γ s (t)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.0001
10 µ
1s
ho
t
ls
pu
100 µ
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.2.00 Sep 07, 2005 page 5 of 7
D=
PDM
e
0.001
150
Channel Temperature Tch (°C)
VSD (V)
10
100
1000
10000
HAT2058R, HAT2058RJ
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
1
• L • IAP2 •
2
EAR =
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.2.00 Sep 07, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2058R, HAT2058RJ
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT2058R-EL-E
HAT2058RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0