HAT2058R, HAT2058RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1174-0200 (Previous: ADE-208-934) Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Rev.2.00 Sep 07, 2005 page 1 of 7 5 6 D D S3 MOS2 Source Gate Drain HAT2058R, HAT2058RJ Absolute Maximum Ratings (Ta = 25°C) Item Value HAT2058R HAT2058RJ Symbol Drain to source voltage Gate to source voltage VDSS VGSS Drain current Drain peak current ID Unit 100 ±20 100 ±20 V V 4 32 4 32 A A 4 — 4 4 A A Note 4 — 2 1.6 2 mJ W Note 3 3 150 3 150 W °C Note 2 ID (pulse) Note 1 Body-drain diode reverse drain current Avalanche current IDR Note 4 IAP Avalanche energy Channel dissipation EAR Note 2 Pch Channel temperature Pch Tch °C Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 100 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Test Conditions Zero gate voltage drain current HAT2058R HAT2058RJ IDSS IDSS — — — — 1 0.1 µA µA VDS = 100 V, VGS = 0 Zero gate voltage drain current HAT2058R HAT2058RJ IDSS IDSS — — — — — 10 µA µA VDS = 80 V, VGS = 0 Ta = 125°C IGSS VGS (off) — 1.0 — — ±10 2.5 µA V VGS = ±16 V, VDS = 0 VDS = 10 V, ID = 1 mA |yfs| 5 120 — 145 S mΩ ID = 2 A, VDS = 10 V Note 5 ID = 2 A, VGS = 10 V ID = 2 A, VGS = 4 V VDS = 10 V, VGS = 0 f = 1 MHz Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance RDS (on) 3 — Input capacitance RDS (on) Ciss — — 150 420 180 — mΩ pF Output capacitance Reverse transfer capacitance Coss Crss — — 180 100 — — pF pF Turn-on delay time Rise time td (on) tr — — 10 30 — — ns ns Turn-off delay time Fall time td (off) tf — — 110 60 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.85 75 1.1 — V ns Note: 5. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Note 5 Note 5 VGS = 10 V, ID = 2 A, VDD ≅ 30 V IF = 4 A, VGS = 0 IF = 4 A, VGS = 0 diF/dt = 50 A/µs Note 5 HAT2058R, HAT2058RJ Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 3.0 ive ive Op ion at 1.0 Dr er Op 1 0 Drain Current Dr 2.0 er 0 50 at ion 100 200 150 Ambient Temperature 10 µs 30 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 10 10 PW D C 3 O pe 1 = ra 1 m 0 µs s 10 m tio s n Operation in ( PW N 0.3 this area is ≤ ote 6 10 0.1 limited by RDS (on) s) Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage Ta (°C) VDS (V) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 10 Pulse Test VDS = 10 V Pulse Test (A) (A) 10 V 16 8 ID 4V 12 6 Drain Current Drain Current ID 6V 8 4 4 25°C 2 Tc = 75°C VGS = 2 V –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.8 0.6 ID = 4 A 0.4 2A 0.2 1A 0 0 4 8 12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 7 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 1.0 1 0.5 0.2 VGS = 4 V 0.1 10 V 0.05 0.02 Pulse Test 0.01 0.1 0.2 0.5 1 2 Drain Current 5 10 20 ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2058R, HAT2058RJ 0.5 Pulse Test 0.4 4A 0.3 ID = 1 A, 2 A VGS = 4 V 0.2 4A 1 A, 2 A 0.1 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 50 20 Tc = –25°C 10 25°C 5 75°C 2 1 VDS = 10 V Pulse Test 0.5 0.1 0.3 2000 Capacitance C (pF) 500 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 3 10 30 100 100 Coss 50 Crss 20 30 40 50 VGS 12 8 80 40 4 VDD = 80 V 50 V 25 V 0 8 16 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 7 24 0 32 Qg (nc) 40 1000 Switching Time t (ns) 16 VDS 0 200 Switching Characteristics VDD = 80 V 50 V 25 V 120 Ciss Dynamic Input Characteristics ID = 4 A 160 500 Drain to Source Voltage VDS (V) 20 200 100 Reverse Drain Current IDR (A) VGS (V) VDS (V) Drain to Source Voltage 1 30 1000 20 VGS = 0 f = 1 MHz 10 0 10 Gate to Source Voltage Reverse Recovery Time trr (ns) 5000 0.3 10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time 20 1 300 td(off) 100 30 tf tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2058R, HAT2058RJ Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 10 V VGS = 0, –5 V 4 5V 2 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 2.5 IAP = 4 A VDD = 50 V L = 100 µH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 75 100 125 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 lse 0.001 D= PDM u tp ho 1s 0.0001 10 µ PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Normalized Transient Thermal Impedance γ s (t) Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.0001 10 µ 1s ho t ls pu 100 µ PW T PW T 1m 10 m 100 m 1 Pulse Width PW (S) Rev.2.00 Sep 07, 2005 page 5 of 7 D= PDM e 0.001 150 Channel Temperature Tch (°C) VSD (V) 10 100 1000 10000 HAT2058R, HAT2058RJ Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 • L • IAP2 • 2 EAR = VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2058R, HAT2058RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2058R-EL-E HAT2058RJ-EL-E Quantity 2500 pcs 2500 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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