RENESAS HAT1097RJ-EL-E

HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0529-0100
Rev.1.00
Feb.15.2005
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A
(Previous code: SOP-8 <FP-8DA>)
5 6
7 8
D D D D
8
5
7 6
4
G
3
1 2
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
HAT1097R
HAT1097RJ
Drain to source voltage
VDSS
–60
–60
Gate to source voltage
VGSS
±20
±20
Drain current
ID
–5
–5
Note1
Drain peak current
ID (pulse)
–40
–40
Avalanche current
IAPNote3
—
–5
Avalanche energy
EARNote3
—
2.14
Channel dissipation
PchNote2
2
2
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Feb.15.2005, page 1 of 7
Unit
V
V
A
A
A
mJ
W
°C
°C
HAT1097R, HAT1097RJ
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to Source breakdown voltage
Zero gate voltage drain current
HAT1097R
Zero gate voltage
drain current
HAT1055RJ
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.1.00, Feb.15.2005, page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IDSS
RDS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Min
–60
±20
—
—
—
—
–1.0
3
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
5
60
90
1350
135
85
21
3
4
20
15
55
10
–0.85
Max
—
—
–1
—
–10
±10
–2.5
—
76
130
—
—
—
—
—
—
—
—
—
—
–1.10
Unit
V
V
µA
µA
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
trr
—
25
—
ns
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0
Ta = 125°C
VGS = ±16 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –2.5 ANote4, VDS = –10 V
ID = –2.5 ANote4, VGS = –10 V
ID = –2.5 ANote4, VGS = –4.5 V
VDS = –10 V, VGS = 0
f = 1 MHz
VDD = –25 V
VGS = –10 V
ID = –5 A
VGS = –10 V, ID= –2.5 A
VDD ≅ –30 V
RL = 12 Ω
RG = 4.7 Ω
IF = –5 A, VGS = 0Note4
IF = –5 A, VGS = 0
diF/dt = 100 A/µs
HAT1097R, HAT1097RJ
Main Characteristics
Maximum Safe Operation Area
10
µs
10
0µ
s
PW 1 ms
=1
0m
DC
s
Power vs. Temperature Derating
–100
4.0
Channel Dissipation
3.0
2.0
(A)
–30
–10
Drain Current ID
Pch (W)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm) PW ≤ 10 s
–3
–1
Op
era
tio
–0.3
n(
PW
–0.1 Operation in
this area is
–0.03 limited by R
DS(on)
1.0
N
< 1 ote
0s5
)
–0.01
–0.003
0
50
100
150
Ambient Temperature
200
Ta (°C)
Ta = 25°C
1 shot Pulse
–0.001
–0.1 –0.3 –1
–3
–10 –30 –100
Drain to Source Voltage VDS (V)
Note 5: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
–10
–10
–3.5 V
(A)
–6 V
–4.5 V
–8
Drain Current ID
(A)
Drain Current ID
–8
VDS = –10 V
Pulse Test
Pulse Test
–10 V
–6
–6
–4
–4
–2
–2
Tc = 75°C
VGS =–2.5 V
–2
–4
–6
Drain to Source voltage
–8
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
–1
Pulse Test
–0.8
–0.6
–0.4
–2 A
–8
–12
Gate to Source Voltage
Rev.1.00, Feb.15.2005, page 3 of 7
–16
–5
VGS (V)
0.5
0.2
0.1
VGS = –4.5 V
–10 V
0.02
–1 A
–4
–25°C
–3
–4
–2
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.05
ID = –5 A
–0.2
–1
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0
0
0
–10
Drain to Source on State Resistance
RDS(on) (Ω)
0
25°C
–20
VGS (V)
0.01
–1
–3
–10
–30
Drain Current ID (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
HAT1097R, HAT1097RJ
0.20
–5 A
ID = –1, –2 A
0.15
VGS = –4.5 V
0.10
–5 A
0.05
–1, –2 A
–10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
25°C
75°C
2
V DS = –10 V
Pulse Test
1
0.5
–0.1 –0.3
–3
–10
–30
–100
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain Source Voltage
5000
1000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
–1
200
100
50
2000
1000
Ciss
500
200
Coss
100
50
Crss
20
10
–0.1 –0.3
10
–1
–3
–10
Reverse Drain Current
–30
0
–100
–4
ID = –5 A
–8
–40
VDS
–60
VDD = –10 V
–25 V
–50 V
–80
0
VGS
8
16
24
32
Gate Charge Qg (nc)
Rev.1.00, Feb.15.2005, page 4 of 7
–30
–40
–50
(V)
–12
–16
–20
40
1000
Gate to Source Voltage VGS (V)
Switching Time t (ns)
VDS (V)
Drain to Source Voltage
–20
–20
Switching Characteristics
0
VDD = –10 V
–25 V
–50 V
–10
Drain Source Voltage VDS
IDR (A)
Dynamic Input Characteristics
0
–100
VGS = 0
f = 1 MHz
20
300
100
t d(off)
tr
30
10
3
1
–0.1 –0.3
t d(on)
tf
VGS = –10 V, VDS = –30 V
PW = 5 µs, duty < 1 %
–1
–3
–10 –30
Drain Current ID (A)
–100
HAT1097R, HAT1097RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
Reverse Drain Current IDR
(A)
Pulse Test
–8
–10 V
–6
–5 V
–4
V GS = 0, 5 V
–2
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I AP = −5 A
V DD = −25 V
duty < 0.1 %
Rg > 50 Ω
2.0
1.5
1.0
0.5
0
25
50
Avalanche Test Circuit
100
125
150
Avalanche Waveform
EAR =
L
V DS
Monitor
75
Channel Temperature Tch (°C)
1
2
2
L • I AP •
VDSS
VDSS - V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
-15 V
50Ω
0
VDD
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
V DD
= -30 V
Vout
td(on)
Rev.1.00, Feb.15.2005, page 5 of 7
90%
90%
10%
10%
tr
td(off)
tf
HAT1097R, HAT1097RJ
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.1
0.05
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.02
0.01
0.01
e
uls
0.001
p
ot
PDM
h
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
Rev.1.00, Feb.15.2005, page 6 of 7
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
HAT1097R, HAT1097RJ
Package Dimensions
RENESAS Code
PRSP0008DD-A
Previous Code
FP-8DA
MASS[Typ.]
0.085g
F
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
*1 D
bp
b1
1
Z
c1
c
*2 E
Index mark
HE
5
8
4
*3
Terminal cross section
bp
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
x M
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.42
0.50
1.75
A
A
A1
bp
L
0.40
b1
c
0.19
c1
0.25
0.20
0°
Detail F
y
0.22
HE
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT1097R-EL-E
HAT1097RJ-EL-E
Quantity
2500 pcs.
2500 pcs.
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Feb.15.2005, page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .2.0