PD - 96384A
AUTOMOTIVE GRADE
AUIRF2807
HEXFET® Power MOSFET
Features
l
l
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Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
G
S
75V
RDS(on) max.
13mΩ
ID(Silicon Limited)
82A
h
ID (Package Limited)
75A
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
G
D
S
TO-220AB
AUIRF2807
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
82
58
75
280
230
1.5
±20
340
43
23
5.9
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
c
dg
c
e
A
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
y
Thermal Resistance
RθJC
RθCS
RθJA
Units
h
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
y
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.50
–––
0.65
–––
62
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/09/11
AUIRF2807
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
75
–––
–––
V
Conditions
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.074
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
13
VGS = 10V, ID = 43A
2.0
–––
4.0
mΩ
V
gfs
IDSS
Forward Transconductance
38
–––
–––
S
VDS = 50V, ID = 43A
Drain-to-Source Leakage Current
–––
–––
25
μA
VDS = 75V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 0V, ID = 250μA
f
VDS = VGS, ID = 250μA
f
VDS = 60V, VGS = 0V, TJ = 150°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
–––
–––
29
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
55
VGS = 10V, See Fig.6 and 13
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 38V
tr
Rise Time
–––
64
–––
td(off)
Turn-Off Delay Time
–––
49
–––
tf
Fall Time
–––
48
–––
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
160
–––
4.5
–––
–––
7.5
–––
Ciss
Input Capacitance
–––
3820
–––
Coss
Output Capacitance
–––
610
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Min.
Typ.
Max.
ID = 43A
nC
VDS = 60V
f
ID = 43A
ns
RG = 2.5Ω
VGS = 10V,, See Fig.10
Between lead,
nH
f
D
6mm (0.25in.)
Between lead,
G
S
and center of die contact
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
h
–––
–––
82
–––
–––
280
–––
–––
1.2
Units
Conditions
MOSFET symbol
A
VSD
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
–––
100
150
ns
Qrr
Reverse Recovery Charge
–––
410
610
nC
ton
Forward Turn-On Time
V
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 43A, VGS = 0V
TJ = 25°C, IF = 43A
di/dt = 100A/μs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 370μH, RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2
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AUIRF2807
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
3L-TO-220
N/A
Class M4(+/- 800V )†††
(per AEC-Q101-002)
Class H1C(+/- 2000V )†††
(per AEC-Q101-001)
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF2807
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
4.5V
20μs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
4.5V
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
10
4.0
V DS = 25V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
9.0
10
100
Fig 2. Typical Output Characteristics
1000
TJ = 175 ° C
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
20μs PULSE WIDTH
TJ = 175 ° C
10
0.1
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 71A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF2807
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
6000
Coss = Cds + Cgd
5000
Ciss
4000
3000
Coss
2000
Crss
1000
20
VGS , Gate-to-Source Voltage (V)
7000
10
VDS = 60V
VDS = 37V
VDS = 15V
16
12
8
4
0
1
ID = 43A
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
1000
ID, Drain-to-Source Current (A)
1000
100
10
TJ = 25 ° C
1
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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120
160
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 175 ° C
0.1
0.0
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
2.4
100μsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2807
100
VGS
80
ID , Drain Current (A)
RD
V DS
LIMITED BY PACKAGE
D.U.T.
RG
+
-V DD
60
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
20
0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
AUIRF2807
600
TOP
500
BOTTOM
ID
18A
30A
43A
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
I AS
50KΩ
12V
.2μF
.3μF
Fig 12b. Unclamped Inductive Waveforms
D.U.T.
+
V
- DS
VGS
QG
VGS
QGS
QGD
VG
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Charge
Fig 13a. Basic Gate Charge Waveform
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7
AUIRF2807
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
V DD
V GS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
V[GS=10V]
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
8
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AUIRF2807
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUF2807
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF2807
Ordering Information
Base part
AUIRF2807
10
Package Type
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF2807
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AUIRF2807
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product
is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
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into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
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applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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