LRC LBSS123LT3

LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET
LBSS123LT1
LBSS123LT1
FEATURE
3
ƽ Pb-Free Package is available.
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
Shipping
SA
3000/Tape&Reel
SA
(Pb-Free)
3000/Tape&Reel
SA
10000/Tape&Reel
SA
(Pb-Free)
10000/Tape&Reel
LBSS123LT1
LBSS123LT1G
LBSS123LT3
LBSS123LT3G
SOT-23
Marking
1
Gate
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
100
Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
VGS
VGSM
±20
±40
Vdc
Vpk
ID
IDM
0.17
0.68
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
TJ, Tstg
–55 to +150
°C
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Drain
3
2 Source
Adc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
LBSS123LT1–1/4
LESHAN RADIO COMPANY, LTD.
LBSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
–
–
Vdc
–
–
–
–
15
60
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
µAdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
–
–
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
–
2.8
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
–
5.0
6.0
Ω
gfs
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
20
–
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
9.0
–
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
4.0
–
pF
td(on)
–
20
–
ns
td(off)
–
40
–
ns
VSD
–
–
1.3
V
ON CHARACTERISTICS (Note 4.)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS(4)
Turn–On Delay Time
Turn–Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 Ω)
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
LBSS123LT1–2/4
LESHAN RADIO COMPANY, LTD.
LBSS123LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
VGS = 10 V
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
9.0
0.8
125°C
0.6
0.4
0.2
0
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-ā55°C
+ā100
Figure 3. Temperature versus Static
Drain–Source On–Resistance
+ā140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
+ā100
+ā140
Figure 4. Temperature versus Gate
Threshold Voltage
LBSS123LT1–3/4
LESHAN RADIO COMPANY, LTD.
LBSS123LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. Gate
2. Source
3. Drain
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LBSS123LT1–4/4