LRC LBSS138LT1

LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
LBSS138LT1
N–Channel SOT–23
3
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
•
1
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2
• Miniature SOT–23 Surface Mount Package saves board space
• Pb−Free Package May be Available. The G−Suffix Denotes a
SOT– 23 (TO–236AB)
Pb−Free Lead Finish
200 mAMPS
50 VOLTS
R DS(on) = 3.5 N - Channel
3
MAXIMUM RATINGS (TA = 25 o C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Symbol
Value
Unit
VDSS
50
Vdc
VGS
± 20
Vdc
1
mA
ID
IDM
200
800
2
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
MARKING DIAGRAM
& PIN ASSIGNMENT
RθJA
556
°C/W
Drain
TL
260
°C
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
3
J1
W
1
Gate
2
Source
J1 = Device Code
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
LBSS138LT1
SOT–23
3000 Tape & Reel
LBSS138LT1G
SOT–23
3000 Tape & Reel
LBSS138LT1-1/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
50
–
–
Vdc
–
–
–
–
0.1
0.5
OFF CHARACTERISTICS
V(BR)DSS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
µAdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
±0.1
µAdc
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
–
1.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
–
–
5.6
–
10
3.5
gfs
100
–
–
mmhos
pF
ON CHARACTERISTICS (Note 1.)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
–
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
–
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
–
3.5
5.0
td(on)
–
–
20
td(off)
–
–
20
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
ns
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
LBSS138LT1-2/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.7
0.9
VGS = 3.5 V
TJ = 25°C
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.8
-55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
2.2
1.25
ID = 1.0 mA
2
1.8
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
25°C
10
145
VDS = 40 V
TJ = 25°C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
LBSS138LT1-3/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0.05
0
0.15
0.1
0.25
0.2
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
5
4
4.5
4
3.5
3
25°C
2.5
2
-55°C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
150°C
5
25°C
3
2
1
-55°C
0.05
0
0.25
0.2
4.5
VGS = 10 V
4
150°C
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
Figure 8. On–Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.15
0.1
ID, DRAIN CURRENT (AMPS)
Figure 7. On–Resistance versus Drain Current
VGS = 4.5 V
5.5
150°C
6
Figure 6. On–Resistance versus Drain Current
6
VGS = 2.75 V
7
120
100
TJ = 150°C
0.1
25°C
-55°C
80
60
0.01
Ciss
40
Coss
20
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
Crss
0
5
10
15
20
25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
LBSS138LT1-4/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LBSS138LT1-5/5