S-LNTA7002NT1G LNTA7002NT1G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−89
LNTA7002NT1G
S-LNTA7002NT1G
Features
•
•
•
•
•
•
Low Gate Charge for Fast Switching
Small 1.6 X 1.6 mm Footprint
ESD Protected Gate
We declare that the material of product is ROHS compliant
and halogen free.
ESD Protected:2000V
ESD
Protected:1500V
S- Prefix
for Automotive and Other Applications Requiring
ESD
Protected:1500V
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-89
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Gate
1
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
3
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"10
V
Continuous Drain
Current (Note 1)
Steady State = 25°C
ID
154
mA
Power Dissipation
(Note 1)
Steady State = 25°C
PD
300
mW
tP v 10 ms
IDM
618
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
ISD
154
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
Operating Junction and Storage Temperature
Source
2
(Top View)
MARKING DIAGRAM
3
T6
1
M
Parameter
2
T6 = Specific Device Code
M = Month Code
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Symbol
Max
Unit
RqJA
416
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
LNTA7002NT1G
S-LNTA7002NT1G
LNTA7002NT3G
S-LNTA7002NT3G
Marking
Shipping
T6
3000/Tape&Reel
T6
10000/Tape&Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V,
T = 85 °C
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±25
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
±1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
T = 85 °C
±1.0
mA
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 100 mA
1.0
1.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 154 mA
1.4
7.0
VGS = 2.5 V, ID = 154 mA
2.3
7.5
VDS = 3 V, ID = 154 mA
80
ON CHARACTERISTICS (Note 2)
Forward Transconductance
gFS
0.5
W
mS
CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
11.5
Reverse Transfer Capacitance
CRSS
3.5
td(ON)
13
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
10
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
tf
ns
15
98
ns
60
Drain−Source Diode Characteristics
Forward Diode Voltage
VSD
VGS = 0 V, IS = 0.154 mA
0.77
0.9
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Rev .O 2/5
V
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
VGS = 10 V
5V
2.8 V
2.4 V
0.16
0.14
0.2
TJ = 25°C
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
0.2
0.18
2V
0.12
0.1
0.08
0.06
0.04
0.02
1.4 V
0
1.2 V
0
0.4
0.8
1.6
1.2
0.16
0.12
0.08
TJ = 125°C
0.04
TJ = 25°C
TJ = −55°C
0
0.6
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 4.5 V
TJ = 125°C
2
1.5
TJ = 25°C
1
TJ = −55°C
0.5
0
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
2.5
TJ = 25°C
1.5
VGS = 4.5 V
1
0.5
0
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1000
ID = 0.15 A
VGS = 4.5 V
VGS = 0 V
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
2
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
1.2
0.8
1.6
1
1.4
1.8
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.4
1.2
1
0.8
0.6
100
TJ = 150°C
10
TJ = 125°C
0.4
0.2
0
−50
1
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
30
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
20
Ciss
1000
TJ = 25°C
VDD = 5.0 V
ID = 75 mA
VGS = 4.5 V
Crss
15
10
Ciss
td(off)
tf
100
tr
td(on)
10
Coss
5
0
10
t, TIME (ns)
C, CAPACITANCE (pF)
25
VDS = 0 V
5
VGS = 0 V
0
VGS
Crss
5
10
15
20
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1
1
10
RG, GATE RESISTANCE (OHMS)
100
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
IS, SOURCE CURRENT (AMPS)
0.16
0.14
VGS = 0 V
TJ = 25°C
0.12
0.1
0.08
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev .O 5/5