To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES ............................................................................... 600V ¡IC ......................................................................................... 75A ¡High Speed Switching ¡Low VCE Saturation Voltage q e q GATE w COLLECTOR e EMITTER r COLLECTOR TO-3PL APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Conditions 600 ±20 Unit V V VCE = 0V ±30 75 150 300 –40 ~ +150 V A A W °C –40 ~ +150 9.8 °C g Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight Ratings VGE = 0V VCE = 0V Typical value Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage Collector-emitter leakage current IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V Gate-emitter leakage current Gate-emitter threshold voltage VCE = 600V, VGE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V Limits Test conditions Unit Min. 600 — — Typ. — — — Max. — ±0.5 1 VCE = 25V, VGE = 0V, f = 1MHz 4.5 — — — 6.0 2.5 3100 400 7.5 3.0 — — V V pF pF td (off) tf Turn-on delay time Rise time Turn-off delay time Fall time VCC = 300V, Resistance load, IC = 75A, VGE = 15V, RGE = 10Ω — — — — 130 40 265 175 — — — — pF ns ns ns Rth (j-c) Thermal resistance Junction to case — — 245 — — 0.42 ns °C/W IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance V µA mA PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V COLLECTOR CURRENT IC (A) 100 15V Tj = 25°C 12V 80 PC = 300W 60 11V 40 10V 20 9V 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 6 150A 4 75A 2 30A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE 5 VGE = 15V Tj = 25°C 4 3 2 1 0 0 20 40 60 80 COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 100 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCE = 10V Tj = 25°C 80 60 40 20 0 100 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 Cies 3 2 103 7 5 3 2 Coes 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 Cres tf tr 102 7 5 16 300V 12 8 4 160 GATE CHARGE Qg (nc) 200 td(off) td(on) 3 Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth ( j – c) GATE-EMITTER VOLTAGE VGE (V) VCE = 200V 120 20 2 101 0 10 GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 80 16 3 2 f = 1MHZ 40 12 103 7 5 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 0 8 SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) 0 4 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (pF) COLLECTOR CURRENT IC (A) 0 7 5 3 2 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 7 5 3 2 3 2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999