MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L CT15SM-24 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE GENERAL INVERTER • UPS USE CT15SM-24 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VCES ............................................................................. 1200V ¡IC ......................................................................................... 15A ¡High Speed Switching ¡Low VCE Saturation Voltage q GATE w COLLECTOR e EMITTER r COLLECTOR q e TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Conditions 1200 ±20 Unit V V VCE = 0V ±30 15 30 250 –40 ~ +150 V A A W °C –40 ~ +150 4.8 °C g Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight Ratings VGE = 0V VCE = 0V Typical value Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE CT15SM-24 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage Collector-emitter leakage current IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V Gate-emitter leakage current Gate-emitter threshold voltage VCE = 1200V, VGE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V Limits Test conditions Unit Min. 1200 — — Typ. — — — Max. — ±0.5 1 VCE = 25V, VGE = 0V, f = 1MHz 4.5 — — — 6.0 2.7 1600 150 7.5 3.6 — — V V pF pF td (off) tf Turn-on delay time Rise time Turn-off delay time Fall time VCC = 600V, Resistance load, IC = 15A, VGE = 15V, RGE = 20Ω — — — — 45 50 150 150 — — — — pF ns ns ns Rth (j-c) Thermal resistance Junction to case — — 250 — — 0.50 ns °C/W IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance V µA mA PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 15V COLLECTOR CURRENT IC (A) 20 Tj = 25°C 16 11V 12 10V 8 4 0 9V 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 6 4 IC = 30A 15A 2 0 10A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE CT15SM-24 GENERAL INVERTER • UPS USE VGE = 15V Tj = 25°C 4 3 2 1 0 0 4 8 12 16 VCE = 10V Tj = 25°C 16 12 8 4 0 20 8 12 16 20 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 Cies 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V Coes 3 tr 102 7 5 Cres 3 101 0 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 16 600V 12 8 4 40 60 80 GATE CHARGE Qg (nc) 100 2 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth (j–c) VCC = 400V 20 Tj = 25°C VCC = 600V VGE = 15V RG = 20Ω COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 24 0 td(on) 2 f = 1MHZ 20 tf td(off) 2 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) 4 GATE-EMITTER VOLTAGE VGE (V) 103 0 0 COLLECTOR CURRENT IC (A) 104 7 5 3 2 101 COLLECTOR CURRENT IC (A) 5 COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 20 SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (pF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 7 5 3 2 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 7 5 3 2 3 2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999