2SK2393 Silicon N Channel MOS FET REJ03G1010-0200 (Previous: ADE-208-1357) Rev.2.00 Sep 07, 2005 Application High voltage / High speed power switching Features • • • • • Low on-resistance, High breakdown voltage High speed switching Low drive current No secondary breakdown Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D 1. Gate 2. Drain (Flange) 3. Source G S 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 2SK2393 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 1500 ±20 8 20 8 200 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS IGSS Min 1500 — Typ — — Max — ±1 Unit V µA Test Conditions ID = 10 mA, VGS = 0*1 VGS = ±20 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) — 2.0 — — — 1.9 500 4.0 2.8 µA V Ω VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 15 V*3 1.8 — — — — — — — — — 3.0 4370 560 200 75 180 260 125 0.9 6.5 — — — — — — — — — — S pF pF pF ns ns ns ns V µs ID = 4 A, VDS = 20 V*3 Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6 |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5 Ω IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF / dt = 100 A / µs 2SK2393 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Drain Current ID (A) Channel Dissipation Pch (W) 400 300 200 100 30 10 0µ DC 3 50 100 150 era Operation in 1 this area is tio s( n( Tc 1s =2 500 1000 2000 Typical Output Characteristics Typical Transfer Characteristics 5 15 V VDS = 10 V Pulse Test 10 V 7V 6 4 6V 2 VGS = 5 V 10 20 30 40 4 3 2 Tc = 75°C –25°C 1 0 50 25°C 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 16 12 ID = 5 A 8 2A 4 1A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 20 0 t) C) Drain to Source Voltage VDS (V) 8V 0 ho 5° Case Temperature TC (°C) Drain Current ID (A) 8 µs s s 0m limited by RDS(on) Pulse Test Drain Current ID (A) Op 1m =1 0.1 Ta = 25°C 20 50 100 200 200 10 Drain to Source Saturation Voltage VDS (on) (V) PW 0.3 0 10 10 20 Pulse Test 10 5 VGS = 10 V 2 15 V 1 0.5 0.2 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2393 5 ID = 5 A Pulse Test 2A 4 1A 3 VGS = 15 V 2 1 0 –40 0 40 80 120 160 Tc = –25°C 2 25°C 1 75°C 0.5 0.2 0.1 0.1 VDS = 20 V Pulse Test 0.2 0.5 1 2 5 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10 10000 Ciss Capacitance C (pF) 20 10 5 2 1 0.3 1 Crss 100 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 8 A 16 800 VDD = 250 V 400 V 600 V VDS VGS 12 8 400 VDD = 250 V 400 V 600 V 200 0 Coss 300 10 1000 600 1000 10 3 40 80 120 4 160 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 0 200 2000 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 1000 Switching Time t (ns) 0.5 0.1 3000 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 5 Case Temperature TC (°C) 50 Drain to Source Voltage VDS (V) 10 500 td(off) tf 200 100 tr 50 20 0.1 td(on) 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK2393 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 10 V 8 5V 6 VGS = 0, –5 V 4 2 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 Ω 10% 10% VDD = 30 V 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2393 Package Dimensions RENESAS Code PRSS0004ZF-A Package Name MASS[Typ.] TO-3PL / TO-3PLV Unit: mm 9.9g 5.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 20.0 ± 0.6 2.5 ± 0.3 26.0 ± 0.3 6.0 ± 0.2 JEITA Package Code 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 5.45 ± 0.5 0.6 +0.25 –0.1 2.8 ± 0.2 1.0 3.8 7.4 Ordering Information Part Name 2SK2329-E Quantity 500 pcs Shipping Container Box (Case) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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