RENESAS 2SK1522

2SK1521, 2SK1522
Silicon N Channel MOS FET
REJ03G0949-0200
(Previous: ADE-208-1289)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
1. Gate
2. Drain
3. Source
S
2
3
2SK1521, 2SK1522
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
450
VGSS
500
±30
V
ID(pulse)*
50
200
A
A
Body to drain diode reverse drain current
Channel dissipation
IDR
2
Pch*
50
250
A
W
Channel temperature
Storage temperature
Tch
Tstg
150
–55 to +150
°C
°C
2SK1521
2SK1522
Gate to source voltage
Drain current
Drain peak current
ID
1
Unit
V
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
2SK1521
2SK1522
V(BR)DSS
450
500
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
±30
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
Zero gate voltage drain 2SK1521
current
2SK1522
IDSS
—
—
250
µA
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on 2SK1521
state resistance
2SK1522
VGS(off)
RDS(on)
2.0
—
—
0.08
3.0
0.10
V
Ω
ID = 1 mA, VDS = 10 V
3
ID = 25 A, VGS = 10 V *
|yfs|
—
22
0.085
35
0.11
—
S
ID = 25 A, VDS = 10 V *
Input capacitance
Output capacitance
Ciss
Coss
—
—
8700
2400
—
—
pF
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
Crss
td(on)
—
—
235
85
—
—
pF
ns
tr
250
600
—
—
ns
ns
Drain to source
breakdown voltage
Forward transfer admittance
Rise time
Turn-off delay time
td(off)
—
—
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
250
1.1
—
—
ns
V
trr
—
120
—
ns
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
Test conditions
3
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
2SK1521, 2SK1522
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1,000
300
Drain Current ID (A)
Channel Dissipation Pch (W)
300
200
100
rea
sa
thi S (on)
n
ni RD
tio by
era ted
DC
Op limi
is
100
0
10
3
1
2SK1521
2SK1522
Ta = 25°C
0.1
50
100
1
150
Case Temperature TC (°C)
10
30
Drain Current ID (A)
Pulse Test
5.5 V
60
5V
40
20
4.5 V
80
60
40
20
TC = 75°C
25°C
VGS = 4 V
4
8
12
16
–25°C
0
20
4
2
6
10
8
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
5
50 A
Pulse Test
4
3
2
20 A
ID = 10 A
1
4
8
12
16
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
1,000
VDS = 20 V
Pulse Test
6V
10 V
0
300
Typical Transfer Characteristics
8V
0
100
100
100
Drain Current ID (A)
3
Drain to Source Voltage VDS (V)
Typical Output Characteristics
80
µs
µs
1m
=
10
s
Op
m
s(
er
at
1
ion
Sh
ot
(T
)
C =
25
°C
)
30
0.3
0
10
10
PW
1
Pulse Test
0.5
0.2
VGS = 10, 15 V
0.1
0.05
0.02
0.01
5
10
20
50
100 200
Drain Current ID (A)
500
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
ID = 50 A
0.2
20 A
0.1
10 A
0
–40
0
80
40
120
160
VDS = 20 V
Pulse Test
1
0.5
0.5
1
2
5
10
20
50
Ciss
Capacitance C (pF)
50
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
Coss
1,000
100
Crss
VGS = 0
f = 1 MHz
10
1
2
5
10
20
0
50
10
30
20
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
20
VDD = 100 V
400
16
250 V
400 V
300
VGS
12
VDS
200
8
ID = 50 A
VDD = 400 V
100
4
250 V
100 V
80
160
0
240
320
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
400
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
2
10,000
5
0.5
Drain to Source Voltage VDS (V)
5
Typical Capacitance vs.
Drain to Source Voltage
100
0
25°C
75°C
10
Body to Drain Diode Reverse
Recovery Time
200
10
TC = –25°C
20
Drain Current ID (A)
500
20
50
Case Temperature TC (°C)
5,000
Switching Time t (ns)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK1521, 2SK1522
50
.
VGS = 10 V, VDD =. 30 V
PW = 2 µs, duty < 1%
2,000
1,000
td (off)
500
tf
200
tr
td (on)
100
50
0.5
1
2
5
10
20
Drain Current ID (A)
50
2SK1521, 2SK1522
Reverse Drain Current vs.
Source to Drain Voltage
100
Reverse Drain Current IDR (A)
Pulse Test
80
60
40
20
VGS = 0, –5 V
10 V
0
0.4
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γS (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
θch–c (t) = γS (t) • θch–c
θch–c = 0.5°C/W, TC = 25°C
0.1
PDM
0.02
0.03 0.01
1 Sh
o
0.01
10 µ
lse
t Pu
T
100 µ
1m
10 m
100 m
PW
D = PW
T
1
10
Pulse Width PW (S)
Waveforms
Switching Time Test Circuit
Vin Monitor
90%
Vout Monitor
Vin
D.U.T
RL
50 Ω
Vin
10 V
Rev.2.00 Sep 07, 2005 page 5 of 6
VDD
.
=. 30 V
Vout
td (on)
10%
10%
90%
tr
10%
90%
td (off)
tf
2SK1521, 2SK1522
Package Dimensions
RENESAS Code

PRSS0004ZF-A
Package Name
MASS[Typ.]
TO-3PL / TO-3PLV
Unit: mm
9.9g
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
20.0 ± 0.6
2.5 ± 0.3
26.0 ± 0.3
6.0 ± 0.2
JEITA Package Code
1.4
3.0
2.2
1.2 +0.25
–0.1
5.45 ± 0.5
5.45 ± 0.5
0.6 +0.25
–0.1
2.8 ± 0.2
1.0
3.8
7.4
Ordering Information
Part Name
2SK1521-E
2SK1522-E
Quantity
500 pcs
500 pcs
Shipping Container
Box (Case)
Box (Case)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0