4N47A 4N48A 4N49A OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • Mii JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF19500 JAN, JANTX, JANTXV and JANS quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage............................................................................................................................................................. 1kV Emitter-Collector Voltage............................................................................................................................................................7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V Collector-Base Voltage .............................................................................................................................................................45V Reverse Input Voltage ...............................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A Continuous Collector Current ................................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW Storage Temperature........................................................................................................................................... -65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C. *JEDEC registered data Package Dimensions Schematic Diagram 6 LEADS 0 .0 1 6 Ø [0 .4 1 ] 0 .0 1 9 Ø [0 .4 8 ] 0 .0 4 0 [1 .0 2 ] MAX. 5 A 5 0 .3 0 5 [7 .7 5 ] 0 .3 3 5 [8 .5 1 ] 3 0 .0 2 2 Ø [5 .0 8 ] 0 .1 5 5 [3 .9 4 ] 0 .1 8 5 [4 .7 0 ] 0 .0 4 5 [1 .1 4 ] 0 .0 2 9 [0 .7 3 ] 7 1 0 .5 0 0 [1 2 .7 0 ] M IN . C 3 6 2 E 1 B 2 45° 7 0 .0 3 4 [0 .8 6 4 ] 0 .0 2 8 [0 .7 1 1 ] K N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S ( M IL L IM E T E R S ) NOTE: COLLECTOR IS ISOLATED FROM CASE MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3 - 14 4N47A, 4N48A, and 4N49A JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS *ELECTRICAL CHARACTERISTICS PARAMETER TA = 25°C Unless otherwise specified SYMBOL Input Diode Static Reverse Current MIN TYP MAX UNITS TEST CONDITIONS 100 µA VR = 2V 1.4 1.7 1.5 1.3 V IE = 10mA TYP MAX IR -55°C +25°C +100°C Input Diode Static Forward Voltage 1.0 0.8 0.7 VF *OUTPUT TRANSISTOR TA = 25°C Unless otherwise specified PARAMETER SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 45 V IC = 100µA, IB = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1mA, IB = 0, IF = 0 V(BR)EBO 7 V IC = 0, IE = 100µA, IF = 0 UNITS TEST CONDITIONS Emitter-Collector Breakdown Voltage *COUPLED CHARACTERISTICS PARAMETER SYMBOL MIN IC(ON) 0.5 1.0 2.0 On State Collector Current -55°C 4N47A 4N48A 4N49A 0.7 1.4 2.8 mA IC(ON) On State Collector Current +100°C 4N47A 4N48A 4N49A 0.5 1.0 2.0 mA IC(ON) TYP MAX 5 10 VCE = 5V, IB = 0, IF = 1mA VCE = 5V, IB = 0, IF = 2mA VCE = 5V, IB = 0, IF = 2mA +25°C IC(OFF) 100 nA VCE = 20V, IB = 0, IF = 0mA Off State Collector Current +100°C IC(OFF) 100 µA VCE = 20V, IB = 0, IF = 0mA 2 4N47A VCE(SAT) 0.3 V IC = 0.5mA, IB = 0, IF = 2mA 4N48A VCE(SAT) 0.3 V IC = 1mA, IB = 0, IF = 2mA 4N49A VCE(SAT) 0.3 V IC = 2mA, IB = 0, IF = 2mA VIN-OUT = 1kV 1 f = 1MHz, VIN-OUT = 1kV 1 RI-O Input to Output Capacitance CI-O 5 pF tr / tf tr / tf tr / tf 20 25 25 µs 4N47A 4N48A 4N49A 10 11 Input to Output Resistance Rise Time/ Fall Time Phototransistor Operation NOTE mA Off State Collector Current Collector-Emitter Saturation Voltage NOTE TA = 25°C Unless otherwise specified 4N47A 4N48A 4N49A On State Collector Current NOTE µs VCC = 10V, IF = 10mA, RL = 100Ω µs Rise Time/ Fall Time 4N47A t r / tf 0.85 µs Photodiode Operation 4N48A t r / tf 0.85 µs 4N49A t r / tf 0.85 µs VCC = 10V, IF = 10mA, RL = 100Ω NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter measured using pulse techniques tw =100µs, duty cycle < 1%. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS IFL 0 100 µA Input Current, High Level IFH 2 10 mA Supply Voltage VCE 5 10 V Input Current, Low Level SELECTION GUIDE PART NUMBER JAN4N47A JAN4N48A JAN4N49A JANTX4N47A JANTX4N48A JANTX4N49A JANTXV4N47A JANTXV4N48A JANTXV4N49A JANS4N47A JANS4N48A JANS4N49A PART DESCRIPTION 4N47A Optocoupler, JAN Screening level 4N48AOptocoupler, JAN Screening level 4N49A Optocoupler, JAN Screening level 4N47A Optocoupler, JANTX Screening level 4N48A Optocoupler, JANTX Screening level 4N49A Optocoupler, JANTX Screening level 4N47A Optocoupler, JANTXV Screening level 4N48A Optocoupler, JANTXV Screening level 4N49A Optocoupler, JANTXV Screening level 4N47A Optocoupler, JANS Screening level 4N48A Optocoupler, JANS Screening level 4N49A Optocoupler, JANS Screening level *JEDEC registered data MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3 - 15