M62021L/P/FP System Reset IC with Switch for Memory Backup REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Description The M62021 is a system IC that controls the memory backup function of microcomputer (internal RAM). The IC outputs reset signals (RES/RES) to a microcomputer at power-down and power failure. It also shifts the power supply to RAM from main to backup, outputs a signal (CS) that invokes standby mode, and alters RAM to backup circuit mode. The M62021 contains, in a single chip, power supply monitor and RAM backup functions needed for a microcomputer system, so that the IC makes it possible to construct a system easily and with fewer components compared with a conventional case that uses individual ICs and discrete components. Features • • • • • • • • Built-in switch for selection between main power supply and backup power supply to RAM. Small difference between input and output voltage (IOUT = 80 mA, VIN = 5 V) 0.2 V Typ Detection voltage (power supply monitor voltage) 4.40 V ± 0.2 V Chip select signal output (CS) Two channels of reset outputs (RES/RES) Power on reset circuit built-in Delay time variable by an external capacitance connected to Ct pin Facilitates to form backup function with a few number of components Application • Power supply control systems for memory backup of microcomputer system and SRAM boards with built-in backup function that require switching between external power supply and battery. Block Diagram SW 1 VOUT VIN 3 R1 – R2 + D1 Com Reset circuit 2 VBAT 1.24V 8 CS RES 7 Delay circuit RES 5 6 GND REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 1 of 13 4 Ct M62021L/P/FP Pin Arrangement M62021P M62021FP M62021L 8 CS VOUT 1 8 CS 7 RES VBAT 2 7 RES 6 GND VIN 3 6 GND 5 RES Ct (Delay capcitance) 4 5 RES 4 Ct (Delay capcitance) 3 VIN 2 VBAT 1 VOUT (Top view) Outline: PRSS0008AA-A (8P5) [L] REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 2 of 13 (Top view) Outline: PRDP0008AA-A (8P4) [P] PRSP0008DE-C [FP] (recommend) PRSP0008DA-A (8P2S-A) [FP] (not recommend for new design) M62021L/P/FP Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Item Input voltage Output current Power dissipation Symbol VIN Ratings 7 Unit V IOUT Pd 100 800 mA mW 625 440 Thermal derating Kθ Conditions 8-pin SIP 8-pin DIP 8-pin SOP 8 6.25 mW/°C Operating temperature Topr 4.4 –20 to +75 Storage temperature Tstg –40 to +125 Ta ≥ 25°C 8-pin SIP 8-pin DIP 8-pin SOP °C °C Electrical Characteristics (Ta = 25°C, unless otherwise noted) Symbol Min Typ Max Unit Detection voltage Hysteresis voltage Item VS ∆VS 4.2 50 4.4 100 4.6 200 V mV Temperature coefficient of detection voltage Circuit current VS/∆T — 0.005 — %/°C ICC — 2.0 4.0 mA Difference between input and output voltage VDROP — — 7.5 0.125 12.0 0.25 Ct output voltage (high level) VOH(Ct) — 4.5 0.2 5.0 Ct output voltage (low level) RES output voltage (high level) VOL(Ct) VOH(RES) — 3.5 RES output voltage (low level) VOL(RES) RES output voltage (high level) RES output voltage (low level) CS output voltage (high level) CS output voltage (low level) Test Conditions VIN (at the change from H→L) ∆VS = VSH – VSL IOUT = 0mA VIN = 4V V VIN = 5V VIN = 5V IOUT = 50mA 0.4 — V VIN = 5V * 0.02 4.0 0.1 — V V VIN = 4V * 1 VIN = 4V * — — 0.02 0.05 — 0.2 V VIN = 5V VOH(RES) VOL(RES) 4.5 — 5.0 0.02 — — V V VIN = 5V * VIN = 4V VOH(CS) — 3.50 0.05 3.57 0.2 — V VIN = 4V * VOL(CS) 2.40 — 2.47 0.08 — — V VIN = 0V, VBAT = 3V * 1 VIN = 5V * 0.1 — 0.3 ±0.5 µA VBAT = 3V IF = 10µA IOUT = 80mA 1 1 1 * Isink = 1mA 1 1 * Isink = 1mA 2 2 Backup diode leakage current IR — — Backup diode forward direction voltage VF — — — 0.54 ±0.5 0.6 V Delay time Response time tpd td 10 — 27 5.0 55 25.0 ms µs RES limit voltage of operation VOPL(RES) — 0.65 — V Isink = 1mA VIN = 5V VIN = 0V VIN = 0V→5V, Ct = 4.7µF VIN = 5V→4V 3 * Notes: 1. Regarding conditions to measure VOH and VOL, voltage values are to be generated by internal resistance only and no external resistor is used. 2. These values are produced inserting an external resistor, RCS = 1 MΩ, between the CS pin and GND. 3. With no external resistor (10 kΩ internal resistance only) REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 3 of 13 M62021L/P/FP Test Circuit V Vm2 M62021 1 SW6 SW2 VIN A Im1 Vm1 V 1 V1 3 1 2 – Reset circuit + R2 D1 Com 4 2 VBAT CS Im2 A V2 RES Delay circuit 7 4 5 SW4 3 2 1 1.24V 8 RES SW7 1 3 SW5 R1 SW1 2 VOUT 6 CRT 2 Vm4 V IF1 V Vm3 IF2 Ct 5 6 GND SW3 + 4.7µF Figure 1 Test Circuit Switch Matrix Item Circuit current VOUT CS Detection voltage Ct (VIN negative-going) RES RES Difference between input and output voltage Symbol V1 V2 IF1 IF2 1 2 3 SW 4 5 ICC 4V 5V — — — 1 ON OFF 1 VS (VSL) Decrease VDROP 5V Ct output voltage (high level) Ct output voltage (low level) RES output voltage (high level) VOH(Ct) VOL(Ct) VOH(RES) 5V 4V 4V RES output voltage (low level) VOL(RES) 5V from 5V 1 1 Im1 1 * Vm4 CRT Vm1 — 1 ON OFF 1 OFF — –50mA –80mA — 1 ON OFF 1 OFF 2 2 Vm2 — — — 1 ON OFF 1 OFF 4 1 Vm4 — 1 ON OFF 1 OFF 5 — — 1mA VOH(RES) 5V 4V CS output voltage (high level) *1 VOH(CS) 4V 0V — 3V CS output voltage (low level) VOL(CS) 5V — Backup diode leakage current IR 5V 0V 3V Backup diode forward direction voltage VF 0V — — OFF — VOL(RES) tpd td Measuring Instrument — RES output voltage (low level) VOUT CS RES RES 7 2 3 4 5 6 RES output voltage (high level) Delay time Response time 6 — — — 1 Vm4 2 — 1 ON OFF 1 OFF 6 1mA — 2 1 Vm4 2 1 — 1 ON OFF 1 OFF 3 — — 1 ON OFF 2 OFF 1 1 Im2 — 10µA 1 ON OFF 3 ON 1 1 Vm3 — 2 *3 ON ON *4 OFF 2 3 5 6 1 CRT 1mA — Vm4 2 1 Notes: 1. To measure VOH(CS), insert a 1 MΩ resistor between the CS pin and GND. 2. While monitoring each output by Vm4 or CRT, measure the input voltage Vm1 when the output goes from H to L and L to H. Regarding VSH, raise VIN from 4 V and measure the input voltage Vm1 when the output goes from H to L and L to H. ∆VS is VSH – VSL. 3. To measure delay time, change VIN from 0 V to 5 V and compare, with respect to each pin, the positive-going edge observed on a monitor with that of VIN. To measure response time, change VIN from 5 V to 4 V and compare, with respect to each pin, the negative-going edge observed on a monitor with that of VIN. 4. Set the switch to OFF when measuring response time. REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 4 of 13 M62021L/P/FP Pin Description Pin No. Pin Name 1 Power supply output VOUT Symbol Function 2 Backup power supply input VBAT 3 4 Power supply input Delay capacitor connection pin VIN Ct +5 V input pin. Connect to a logic power supply. A delay capacitor is connected to this pin. By connecting a capacitor, it is possible to delay each output. 5 Positive reset output RES 6 Ground GND Connect to the positive reset input of a microcomputer. The pin is capable of flowing 1 mA sink current. Reference for all signals. 7 Negative reset output RES 8 Chip select output CS VIN and VBAT are controlled by means of an internal switch and output through VOUT. The pin is capable of outputting up to 100 mA. Use it as VDD of CMOS RAM and the like. Backup power supply is connected to this pin. If a lithium battery is used, insert a resistor in series for safety purposes. Connect to the negative reset input of a microcomputer. The pin is capable of flowing 1 mA sink current. Connect to the chip select of RAM. The CS output is at low level in normal state thereby letting RAM be active. Under failure or backup condition, the CS output is set to high level, then RAM enters standby state disabling read/write function. The pin is capable of flowing a 1 mA sink current. Application Example Note)2 M62021 +5V (Main power supply) VIN 3 VOUT 1 SW + + CIN R1 VDD – R2 MCU or CPU + Com Reset circuit 1.24V RES 7 RES 5 COUT D1 VBAT 2 + Battery 3V CS 8 Delay circuit CMOS RAM Ct 4 + C1 Note)1 6 GND Notes: * Capacitance to be connected: CIN: 10µF, COUT: 4.7µF, Ct: 4.7µF 1. If connecting a zener diode, select one of VZ ≈ 2V to 3V. (IZ = 0.1mA) 2. When it is necessary to charge the back-up power supply such as using the large-capacity capacitor, connect it to VIN via a diode and a protection resistor. Figure 2 Application Example REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 5 of 13 VDD M62021L/P/FP Configuration Power Supply Detection The internal reference voltage Vref is compare by means of a comparator with resistor-divided voltage VR (resistordivided voltage produced by R1 and R2 from VIN). If the input voltage is 5 V, VR is set to 1.24 V or higher, so the comparator output is at low level and the Ct output (Q1 collector output) is set to high level. If the input voltage drops to below 4.4 V in an abnormal condition, VR becomes below 1.24 V, so the comparator output goes from low to high level and the Ct output, from high to low. The input voltage at this point is called VSL. Next, when the input voltage, restored from abnormal state, has a rise, the comparator output goes from high to low level and the Ct output, from low to high. The comparator used for detection has 100 mV hysteresis (∆VS), so that malfunctioning is prevented in case that the input voltage slowly drops or VR nearly equals Vref. Ct Output VO (Ct) (V) 5 4 ∆VS 3 2 VSL VSH 1 0 4.0 4.2 4.4 4.6 4.8 5.0 Input Voltage VIN (V) Figure 3 Delay Circuit Connecting an external capacitor to the Ct pin lets RES, RES, CS, and VOUT be delayed due to RC transient phenomenon (electric charge). Delay time is determined as follows. Delay time (tpd) = C1 × (R3 + R4) × 1n [VOH(Ct) – VOL(Ct)] [VOH(Ct) – INV1(VTH)] = C1 × 22kΩ × 0.2614 ≈ 5.75 × 103 × C1 * C is an external capacitance. Taking into consideration the time taken by the oscillator of microcomputer to be stable, connect a 4.7 µF capacitor to the Ct pin. (As the response time of detection can be slowed due to internal structure depending in the rising rate of power supply, avoid connecting a too large capacitance.) tpd VOH(Ct) INV1(Vth) VOL(Ct) Figure 4 Delayed Output Waveforms of Ct REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 6 of 13 M62021L/P/FP Schmitt Trigger Circuit Since waveforms show a gentle rise due to the RC delay circuit, INV1, INV2, R5, and R6 constitute a Schmitt trigger circuit to produce hysteresis so as to prevent each output from chattering. Internal Circuit Ct 4 VIN 3 RES 7 RES 5 Q4 R1 60.94k – VR + R2 24k R7 10k R6 R3 22k R4 R5 47k 47 10k INV1 INV2 R8 10k R10 800 Q2 1 VOUT R11 10k D1 2 VBAT INV3 INV4 Com Q1 Vref 1.24V R9 INV8 INV9 5k Figure 5 Internal Circuit REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 7 of 13 8 CS Q3 INV5 INV6 INV7 R10 22k Q5 6 GND M62021L/P/FP Timing Chart tpd tpd 5V ∆VS VSH VSL VIN 0V V1 V2 V3 V4 V5 VOUT V2 CS V4 V5 VOL(CS) 5V VIN(VSL) RES VOL(RES) VOH(RES) VIN(VSL) RES VOL(RES) V1 = VIN – VDROP V2 = VIN – Q4VEB(Di) V3 = VIN(VSL) – VDROP V4 = VIN(VSL) – Q4VEB(Di) V5 = VBAT – VF Figure 6 Timing Chart Input Voltage In Normal Operation In Failure (Instantaneous Drop) Restoration from Failure (Instantaneous Drop) In Backup State Input voltage: 5V Input voltage: 5V→4V Each output varies if the input voltage drops to VSL or under Input voltage: 4V→5V If the input voltage goes higher than VSL by 100mV, each output varies after delay produced by the delay circuit Input voltage: 0V Backup voltage: 3V VOUT With Q4 set to ON, a voltage (VIN – VDROP) is output Q4 is turned OFF. A voltage (VIN – Q4VEB(Di)) is output by the diode between E and B of Q4. Q4 is turned ON after delay and a voltage (VIN – VDROP) is output. VBAT – VF RES The output level is VOL (RES) with a logic low As the state shifts from a logic low to logic high, the output level becomes approximately equal to the input voltage. A logic high is maintained, and than shifts to a logic high. — RES The output level is VOH (RES) with a logic low As the state shifts from a logic high to logic low, the output level becomes VOL (RES). A logic low is held, and than shifts to a logic high. — CS The output level is VOL (CS) with a logic low As the state shifts from a logic low to logic high, the output level becomes the voltage VIN – Q4VEB(Di). A logic high is maintained, and than shifts to a logic high. Output Pin REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 8 of 13 The output is a logic high and the output level is VBAT – VF M62021L/P/FP Typical Characteristics Thermal Derating (Maximum Rating) Circuit Curent vs. Input Voltage M62021P 600 M62021FP 400 200 0 0 Detection Voltage VS (V) M62021L Circuit Curent ICC (mA) 800 16 25 50 75 100 14 12 10 8 6 4 2 0 0 125 2 3 4 5 6 7 8 Input Voltage VIN (V) Detection Voltage vs. Ambient Temperature 4.48 Hysteresis Voltage vs. Ambient Temperature 140 4.46 4.44 4.42 4.40 4.38 4.36 4.34 4.32 –40 –20 0 Tj = 25°C 130 120 110 100 90 80 70 60 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) Circuit Curent vs. Ambient Temperature 4.0 VIN = 5V VIN = 4V Circuit Curent ICC (mA) 9 8 7 6 5 4 3 2 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 9 of 13 20 40 60 80 100 120 Ambient Temperature Ta (°C) Circuit Curent vs. Ambient Temperature 10 Circuit Curent ICC (mA) 1 Ambient Temperature Ta (°C) Hysteresis Voltage ∆VS (mV) Power Dissipation Pd (mW) 1000 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) M62021L/P/FP 60 40 20 0 0 50 100 150 200 250 RES "L" Output Voltage VOL(RES) (mV) Backup Di Forward Direction Current IF (µA) Difference between Input and Output Voltages VDROP (mV) Backup Di Forward Direction Current vs. Backup Di Forward Direction Voltage 160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Backup Di Forward Direction Voltage VF (V) RES "L" Output Voltage vs. Ambient Temperature 80 VIN = 5V 70 Isink = 1mA 60 50 40 30 20 10 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 10 of 13 Difference between Input and Output Voltages VDROP (mV) 80 Backup Di Forward Direction Voltage VF (V) Output Curent IOUT (mA) VIN = 5V Difference between Input and Output Voltages vs. Ambient Temperature 400 RES "L" Output Voltage VOL(RES) (mV) Output Curent vs. Difference between Input and Output Voltages 100 VIN = 5V 350 300 250 200 150 IOUT = 100mA IOUT = 80mA IOUT = 50mA 100 50 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) Backup Di Forward Direction Voltage vs. Ambient Temperature 0.8 0.7 0.6 IF = 100µA 0.5 IF = 10µA 0.4 IF = 1µA 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) RES "L" Output Voltage vs. Ambient Temperature 80 VIN = 4V 70 Isink = 1mA 60 50 40 30 20 10 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) CS "L" Output Voltage VOL(CS) (mV) CS "L" Output Voltage vs. Ambient Temperature 160 VIN = 5V 140 Isink = 1mA 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 CS "H" Output Voltage VOH(CS) (mV) M62021L/P/FP CS "H" Output Voltage vs. Ambient Temperature 4.0 VIN = 4V 3.8 RCS = 1MΩ 3.6 3.4 3.2 3.0 2.8 2.6 2.4 –40 –20 0 Ambient Temperature Ta (°C) 20 40 60 80 100 120 Ambient Temperature Ta (°C) Delay Time vs. External Capacitance Connected to the Ct Pin 1000 Delay Time vs. Ambient Temperature 40 VIN = 0V→5V VIN = 0V→5V Delay Time tpd (ms) Delay Time tpd (ms) 35 Ct = 4.7µF 100 10 30 25 20 15 10 5 1 0.1 1 10 100 External Capacitance Connected to the Ct Pin Ct (µF) REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 11 of 13 0 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) M62021L/P/FP Package Dimensions JEITA Package Code P-SIP8-6.4x19-2.54 RENESAS Code PRSS0008AA-A Previous Code 8P5 2.8 ±0.2 ±0.2 2.54 0.5 ±0.1 0.85 3.0 Min 1.2 Min 8.3 Max 6.4 19.0 MASS[Typ.] 0.73g +0.3 -0.1 1.2 ±0.1 1.2 +0.1 -0.3 RENESAS Code PRDP0008AA-A 5 1 4 MASS[Typ.] 0.5g c *1 E 8 Previous Code 8P4 +0.07 -0.05 e1 JEITA Package Code P-DIP8-6.3x8.84-2.54 0.27 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. *2 L A1 A A2 D SEATING PLANE *3 b 3 *3 b 2 bp e Reference Symbol e1 D E A A1 A2 bp b2 b3 c e L REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 12 of 13 Dimension in Millimeters Min Nom Max 7.32 7.62 7.92 8.7 8.9 9.1 6.15 6.3 6.45 4.5 0.51 3.3 0.4 0.5 0.6 0.9 1.0 1.3 1.4 1.5 1.8 0.22 0.27 0.34 15° 0° 2.29 2.54 2.79 3.0 M62021L/P/FP JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-C *1 Previous Code — MASS[Typ.] 0.1g F D 8 NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 5 c *2 E HE bp Index mark Terminal cross section ( Ni/Pd/Au plating ) Reference Symbol 4 1 *3 e Z bp x M A A2 L1 A1 θ L y Detail F JEITA Package Code P-SOP8-4.4x5-1.27 RENESAS Code PRSP0008DA-A Min Nom Max 4.65 4.85 5.05 4.2 4.4 4.6 1.85 0.00 0.1 0.20 2.03 0.34 0.4 0.46 0.15 0.20 0.25 0° 8° 5.7 6.2 6.5 1.12 1.27 1.42 0.12 0.10 0.75 0.25 0.45 0.65 0.90 MASS[Typ.] 0.07g E 5 *1 HE 8 Previous Code 8P2S-A D E A2 A1 A bp b1 c c1 θ HE e x y Z L L1 Dimension in Millimeters F 1 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 4 Index mark c A2 *2 A1 D L A Reference Symbol *3 e bp y D E A2 A1 A bp c Detail F HE e y L REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 13 of 13 Dimension in Millimeters Min Nom Max 4.8 5.0 5.2 4.2 4.4 4.6 1.5 0.05 1.9 0.35 0.4 0.5 0.13 0.15 0.2 0° 10° 5.9 6.2 6.5 1.12 1.27 1.42 0.1 0.2 0.4 0.6 Sales Strategic Planning Div. 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