HA16129AFPJ Single Watchdog Timer REJ03F0143-0100 (Previous: ADE-204-067) Rev.1.00 Jun 15, 2005 Description The HA16129AFPJ is a watchdog timer IC that monitors a microprocessor for runaway. In addition to the watchdog timer function, the HA16129AFPJ also provides a function for supplying a high-precision stabilized power supply to the microprocessor, a power on reset function, a power supply voltage monitoring function, and a fail-safe function that masks the microprocessor outputs if a runaway is detected. Functions • Watchdog timer (WDT) function Monitors the P-RUN signal output by the microprocessor, and issues an auto-reset (RES) signal if a microprocessor runaway is detected. • Stabilized power supply Provides power to the microprocessor. • Power on and clock off functions The power on function outputs a low level signal to the microprocessor for a fixed period when power is first applied. The clock off function outputs a RES signal to the microprocessor a fixed period after a runaway occurs. • Power supply monitoring function When the reference voltage (Vout) falls and becomes lower than the NMI detection voltage (4.63 V, Typ) or the STBY detection voltage (3.0 V Typ), this function outputs either an NMI signal or an STBY signal, respectively. Note that NMI detection can be set to monitor either VCC or Vout. • OUTE function*1 (fail-safe function) Outputs a signal used to mask microprocessor outputs when a microprocessor runaway has been detected. • RES delay function Sets the delay between the time the NMI signal is output and the time the RES signal is output. • Protection functions • The HA16129AFPJ incorporates both Vout overvoltage prevention and short detection functions. Note: 1. OUTE function: OUTE is an abbreviation for output enable. Features • • • • • High-precision output voltage: 5.0 V ± 1.5% The WDT supports both frequency and duty detection schemes. High-precision power supply monitoring function: 4.625 V ± 0.125 V Built-in OUTE function All functions can be adjusted with external resistors and/or capacitors. Rev.1.00 Jun 15, 2005 page 1 of 22 HA16129AFPJ Pin Arrangement P-RUN 1 20 STBY Rf 2 19 STBYadj Cf 3 18 RES RR 4 17 NMI CR 5 16 NMIadj RT 6 15 NMIsns CRES 7 14 VOUT GND 8 13 CONT Voadj 9 12 CS OUTE 10 11 VCC (Top view) Rev.1.00 Jun 15, 2005 page 2 of 22 HA16129AFPJ Block Diagram VCC CONT 12 13 14 VOUT 3.3k 71k Voadj − + 31.2k STBYadj 19 CS 11 To microprocessor (or other device) power supply connections 9 1.24V − + 1.5V 36.8k STBY detection block To Vout 15 NMIsns Overvoltage detection block Regulator block STBY 20 3.3k 2k 17 80k NMIadj 16 Short detection block − + 70k NMI S STBY 1.18V 3.3k Q R RES 10 OUTE S Q 25k NMI detection block RT − + tON detection block R OUTE block 6 5 CR Q S 19k IR R NMI 33k If*16 If/6 3.3k 18 8.4k + − − − + RES 20k IR*4/3 Cf − + WDT block 3 RES block 1 CRES + − P-RUN IR If 2V 8 GND Delay circuit block 4 RR 2 Rf Note: The current, voltage, and resistor values listed in the diagram are reference values. : Connect to Vout Rev.1.00 Jun 15, 2005 page 3 of 22 7 HA16129AFPJ Pin Function Related Function WDT. Pin No. 1 Symbol P-RUN 2 Rf The resistor connected to this pin determines the current that flows in the Cf pin capacitor. Use the resistor value from 100 kΩ to 500 kΩ 3 Cf The current determined by the Rf pin charges the Cf capacitor and the potential on this pin determines the watchdog timer frequency band. 4 RR The resistor connected to this pin determines the current that flows in the CR pin capacitor. Use the resistor value from 100 kΩ to 500 kΩ 5 CR The current determined by the RR pin charges the capacitor CR and the potential on this pin controls the RES function (toff, tRH, and tRL). tON 6 RT The resistor RT, which determines only the time tON for the RES function is connected to this pin. This resistor determines the current that charges the capacitor CR for the time tON. Use the resistor value from 100 kΩ to 500 kΩ tr, tRES 7 CRES – Vout 8 9 GND Voadj The current determined by the Rf pin charges the capacitor CRES, and the RES delay times (Tr and TRES) are determined by the potential of this capacitor. Ground Output 10 OUTE Power supply 11 VCC Short detection 12 CS Vout 13 14 CONT VOUT 15 NMIsns This pin senses the NMI detection voltage. If VCC is to be detected, connect this pin to the VCC pin (however, note that an external resistor is required), and if Vout is to be detected, connect this pin to the VOUT pin. 16 NMIadj Output Output STBY 17 18 19 NMI RES STBYadj Insert a resistor if fine adjustment of the NMI detection voltage is required. Leave this pin open if fine adjustment is not required. NMI output RES output Output 20 STBY tRH, tRL, tOFF NMI Rev.1.00 Jun 15, 2005 page 4 of 22 Function Watchdog timer pulse input. The auto-reset function is controlled by the duty cycle or frequency of this input pulse signal. Insert the resistor Roadj if fine adjustment of the regulator output voltage Vout is required. Leave this pin open if Vout does not need to be changed. Output for the OUTE function Power supply Connect the overcurrent detection resistor between the CS pin and the VCC pin. If this function is not used, short this pin to VCC. Also, connect this pin to the emitter of the external transistor. Connect this pin to the base of the external transistor. Provides the regulator output voltage and the IC internal power supply. Connect this pin to the collector of the external transistor. Insert a resistor if fine adjustment of the STBY detection voltage is required. Leave this pin open if fine adjustment is not required. STBY output HA16129AFPJ Functional Description This section describes the functions provided by the HA16129FPJ. See the section on formulas for details on adjustment methods. Regulator Block • Vout Voltage This IC provides a stabilized 5 V power supply by controlling the base current of an external transistor. The largest current (the maximum CONT pin current) that can be drawn by the base of this external transistor is 20 mA. Also note that the Vout output is also used for the power supply for this IC’s internal circuits. Short Detection Block When a current detection resistor (RCS) is connected between the VCC pin and the CS pin, and the voltage between these pins exceeds the VCS voltage (700 mV Typ), the CONT pin function turns off and the output voltage supply is stopped. Output Voltage (Vout) Adjustment The output voltage can be adjusted by connecting an external resistor at the output voltage adjustment pin (Voadj). However, if for some reason the voltage on this Vout line increases and exceeds the voltage adjustment range (7 V Max), the CONT pin function turns off and the output voltage supply is stopped. Refer to the timing charts in conjunction with the following items. LVI (Low Voltage Inhibit) • NMI Detection Voltage This function monitors for drops in the power-supply voltage. This function can be set up to monitor either VCC or Vout. When Vout is monitored, a low level is output from the NMI pin if that voltage falls under the detection voltage (4.63 V Typ). Then, when the power-supply voltage that fell rises again, the NMI pin will output a high level. Note that this function has a fixed hysteresis of 50 mV (Typ). The monitored power supply is selected by connecting the NMIsns pin either to the VCC pin or to the VOUT pin. When detecting VCC, an external adjustment resistor is required.) The detection voltage can also be adjusted with the NMIadj pin. • STBY Detection Voltage This function monitors for drops in the Vout voltage. It monitors the Vout voltage, and outputs a low level from the STBY pin if that voltage drops below the detection voltage (3.0 V Typ). Then, when the power-supply voltage that fell rises again, the STBY pin will output a high level. Note that this function has a fixed hysteresis of 1.35 V (Typ). The detection voltage can also be adjusted with the STBYadj pin. Function Start Voltage This is the minimum required Vout voltage for the RES, NMI, STBY, and OUTE output pin functions to start operating. It is stipulated as the voltage that Vout must reach after power is first applied for these pins to output a low level. Hysteresis This is the difference between the LVI function detection voltage when the power-supply voltage drops, and the clear (reset) voltage when the power-supply voltage rises. (VHYSN = VNMI' – VNMI; VHYSS = VSTBY' – VSTBY) Rev.1.00 Jun 15, 2005 page 5 of 22 HA16129AFPJ OUTE Function When a microprocessor is in the runaway state, its outputs are undefined, and thus it is possible that the outputs may be driven by incorrect signals. This function is used to mask such incorrect microprocessor outputs. When the WDT function recognizes normal operation (when the RES output is high), the OUTE output will be held high. When the WDT function recognizes an abnormal state and an auto-reset pulse is output from the RES pin, the OUTE output will be held low. Thus microprocessor outputs during microprocessor runaway can be masked by taking the AND of those outputs and this signal using external AND gates. The OUTE output will go high when the CR pin voltage exceeds VthHcr2, and will go low when that voltage falls below VthLcr. There are limitation that apply when the OUTE function is used. Refer to the calculation formulas item for details. RES Function • tRH This period is the length of the high-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthLcr from VthHcr1. • tRL This period is the length of the low-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthHcr1 from VthLcr. • tOFF This is the time from the point the P-RUN signal from the microprocessor stops to the point a low level is output from the RES pin. During normal microprocessor operation, the potential on the CR pin will be about Vout – 0.2 V (although this value may change with the P-RUN signal input conditions, so it should be verified in the actual application circuit) and tOFF is the time for the CR pin potential to reach VthLcr from that potential. • tON tON is the time from the point the NMI output goes high when power is first applied to the point the RES output goes low. tON is the time for the potential of the CR pin to reach VthHcr1 from 0 V. • tr The time tr is the fixed delay time between the point the NMI output goes from low to high after the power-supply voltage comes up to the point RES goes from low to high. The time tr is the time for the CRES pin potential to fall from the high voltage (about 1.9 V) to Vthcres. • tRES The time tRES is the fixed delay time between the point the NMI output goes from high to low when the powersupply voltage falls to the point RES goes from high to low. The time tRES is the time for the CRES pin potential to rise from 0 V to Vthcres. WDT Function This function determines whether the microprocessor is operating normally or has entered a runaway state by monitoring the duty or frequency of the P-RUN signal. When this function recognizes a runaway state, it outputs a reset pulse from the RES pin and sets the OUTE pin to low from high. It holds the RES and OUTE pins fixed at high as long as it recognizes normal microprocessor operation. In this function, the potential of the Cf capacitor is controlled by the P-RUN signal. This Cf pin potential charges the capacitor CR that controls the reset pulse to be between VthLcf and VthHcf. The judgment as to whether or not the microprocessor is operating normally, is determined by the balance between the charge and discharge voltage on the capacitor CR at this time. Rev.1.00 Jun 15, 2005 page 6 of 22 HA16129AFPJ Calculation Formulas Item Reference voltage Formula ( Vout = 1.225 1 + 37 // R1 12 // R2 R1, R2; kΩ Notes ( While the Vout voltage will be 5 V ±1.5% when the Voadj pin is open, the circuit shown here should be used to change the Vout voltage externally. VCC CS Vout Voadj R1 R2 Short detection voltage VCS (700 mV Typ) < IL ⋅ RCS When this function operates, the base current to the external transistor connected to the CS pin stops and the Vout output is lowered. RCS VCC OVP – tRH, tRL tRH = 3.3 × CR ⋅ RR tRL = 1.1 × CR ⋅ RR IL CS Vout This function prevents the microprocessor from being damaged if the Vout voltage is inadvertently increased to too high a level. The OVP detection voltage is fixed. These determine the reset pulse frequency and duty. RES tRL tRH tON tON = 1.1 × CR ⋅ RT Sets the time from the rise of the NMI signal to the point the RES output is cleared. NMI RES tOFF tOFF = 6.5 × CR ⋅ RR tON Sets the time from the point the P-RUN pulse stops to the point a reset pulse is output. P-RUN RES Rev.1.00 Jun 15, 2005 page 7 of 22 toff HA16129AFPJ Calculation Formulas (cont.) Item VSTBY Formula VSTBY = 1.48 × Notes +1 ( 29.5 +67.6 36.2 // R1 ( The voltage at which the STBY signal is output when Vout falls. The STBY detection voltage can be adjusted by connecting a resistor between the STBYadj pin and ground (R3). However, the STBY recovery voltage cannot be adjusted. Vout VSTBY' Vout VSTBY STBY STBYadj STBY R1 t VNMI (Vout detection) ( VNMI = 1.2 × 1 + R1 // 73 R2 // 25 ( R1, R2; kΩ The voltage at which the NMI signal is output when Vout falls. (When NMIsns is connected to Vout.) The NMI detection voltage can be adjusted by connecting resistors between the NMIadj pin and Vout (R1), and between the NMIadj pin and ground (R2). Vout NMIsns NMI Vout R2 NMIadj R1 VNMI' VNMI NMI t GND VNMI (VCC detection) VNMI = 4.62 × + 1( ( R2 R1 // 97.1 Recovery voltage VNMI = 4.68 × + 1( ( R2 R1 // 45.5 The voltage at which the NMI signal is output when VCC falls. (When NMIsns is connected to VCC.) The NMI detection voltage can be adjusted by connecting resistors between the NMIsns pin and VCC (R1), and between the NMIsns pin and ground (R2). R1, R2; kΩ R1 VCC CS NMIsns Vout NMI R2 VNMI' VCC VNMI NMI GND OUTE CR × RR > 19.3 × Cf × Rf Rev.1.00 Jun 15, 2005 page 8 of 22 t If the OUTE function is used, the relationship shown at the left must be fulfilled to assure that pulses are not incorrectly generated in this output when a microprocessor runaway state is detected. HA16129AFPJ Calculation Formulas (cont.) Formula 0.31 × (Du − 24) fLine1 = Cf ⋅ Rf fLine2 = 24% (fixed) 0.024 fLine3 = Cf ⋅ Rf fLine4 = 99% The relationship between fLine1 and fLine3 fLine1 = fLine3 × 12.9 (Du − 24) Du: The P-RUN signal duty cycle tH tL Notes The WDT function judges whether the P-RUN pulse signal is normal or not. If the WDT function judges the P-RUN pulse signal to be abnormal, it outputs a reset signal. The normal range is the area enclosed by fLine1 to fLine4 in the figure. fLine1 Frequency Item WDT. Normal operation area fLine2 fLine3 t Du = H × 100 tH + tL Duty Rev.1.00 Jun 15, 2005 page 9 of 22 fLine4 HA16129AFPJ Timing Charts Whole system timing chart VCC VOUT VNMI VSTBY' VNMI' VSTBY STBY NMI RES tON tRL tRES tRH OUTE tOFF P-RUN Rev.1.00 Jun 15, 2005 page 10 of 22 Microprocessor runaway tRES tr HA16129AFPJ WDT. timing chart VOUT (5 V) Normal operation High-frequency runaway Low-frequency runaway P-RUN VthHcf Cf VthLcf VthHcr2 CR VthHcr1 VthLcr tOFF RES tRL tRH OUTE LVI timing chart VCC VNMI' VSTBY' VOUT VNMI VSTBY STBY NMI CR RES & OUTE tr tON CRES Rev.1.00 Jun 15, 2005 page 11 of 22 tRES Vthcres HA16129AFPJ Absolute Maximum Ratings (Ta = 25°C) Item Power supply voltage CS pin voltage CONT pin current CONT pin voltage Vout pin voltage P-RUN pin voltage NMIsns pin voltage NMI pin voltage STBY pin voltage RES pin voltage OUTE pin voltage Power dissipation*1 Operating temperature Storage temperature Rating 40 VCC 20 VCC 12 Vout VCC Vout Vout Vout Vout 400 –40 to +85 –50 to +125 VCC VCS Icont Vcont Vout VPRUN VNMIsns VNMI VSTBY VRES VOUTE PT Topr Tstg Unit V V mA V V V V V V V V mW °C °C 1. This is the allowable value when mounted on a 40 × 40 × 1.6 mm glass-epoxy printed circuit board with a mounting density of 10% at ambient temperatures up to Ta = 77°C. This value must be derated by 8.3 mW/°C above that temperature. Power Dissipation PT (mW) Note: Symbol 77°C 400 300 200 100 0 −40 85°C −20 0 20 40 60 80 100 Ambient Temperature Ta (°C) Rev.1.00 Jun 15, 2005 page 12 of 22 120 140 HA16129AFPJ Electrical Characteristics (Ta = 25°C, VCC = 12V, Vout = 5.0V, Rf = RR = 180kΩ, Cf = 3300pF, CR = 0.1µF, RT = 390kΩ, CRES = 1500pF, RCS = 0.2Ω) Item Power supply current Short detection voltage Regulator block Symbol ICC VCS Min – 400 Typ 10 700 Max 15 900 Unit mA mV Output voltage Vout 4.925 5.00 5.075 V VCC = 12V, Icont = 5mA Input voltage stabilization Volin –30 – 30 mV VCC = 6 to 17.5V, Icont = 10mA Load current stabilization Voload –30 – 30 mV Icont = 0.1 to 15mA Ripple exclusion ratio RREJ (45) 75 – dB Vi = 0.5Vrms, fi = 1kHz Output voltage temperature coefficient | δVout/δT | – 40 (200) ppm/°C Output voltage adjustment range Input high-level voltage Input low-level voltage Input high-level current VoMAX – – 7.0 V – – 300 0 Vout – 0.7 Vout – 0.7 – 0.8 500 5 Vout + 0.2 0.4 1.4 Vout + 0.2 0.4 1.4 V V µA µA V V V V V V 2.0 – – –5 Input low-level current IiL High level VOHN Vout − 0.2 NMI output block Low level VOLN – – Function start voltage VSTN High level VOHS Vout – 0.2 STBY output block Low level VOLS – – Function start voltage VSTS Note: Values in parentheses are design reference values. P-RUN input block Rev.1.00 Jun 15, 2005 page 13 of 22 ViH ViL IiH Test Conditions VCS = (VCC pin voltage – CS pin voltage) Icont = 5mA ViH = 5.0V ViL = 0.0V IOHN = 0mA IOLN = 2.0mA IOHS = 0mA IOLS = 2.0mA HA16129AFPJ Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12V, Vout = 5.0V, Rf = RR = 180kΩ, Cf = 3300pF, CR = 0.1µF, RT = 390kΩ, CRES = 1500pF, RCS = 0.2Ω) RES output block Item High level Low level Function start voltage VOHR VOLR VSTR OUTE output block High level Low level Function start voltage VOHE VOLE VSTE RES function Power on time Clock off time Reset pulse high time ton toff tRH Reset pulse low time LVI function NMI function (Vout detection) tRL VNMI1 Typ Vout – 0.7 Vout – 0.7 40 130 60 20 4.63 Max Vout + 0.2 0.4 1.4 Vout + 0.2 0.4 1.4 60 190 90 30 4.75 VHYSN1 – 50 100 Temperature coefficient | δVNMI/δT | – 100 (400) NMI function (VCC detection) Detection voltage 2 Hysteresis 2 VNMI2 5.0 5.4 5.7 V R1 = 13kΩ, R2 = 390kΩ VHYSN2 0.5 0.8 1.3 V R1 = 13kΩ, R2 = 390kΩ STBY function Detection voltage Hysteresis VSTBY 2.70 3.00 3.30 V VHYSS | δVSTBY/δT | 1.20 – 1.35 100 1.50 (400) V ppm/°C tRES (100) 200 (300) µs Recovery time tr (100) Values in parentheses are design reference values. 200 (300) µs Temperature coefficient RES delay time Note: Disable time Rev.1.00 Jun 15, 2005 page 14 of 22 Unit V V V V V V ms ms ms ms Test Conditions IOHR = 0mA IOLR = 2.0mA Min Vout – 0.2 – – Vout − 0.2 – – 25 80 40 15 4.5 Detection voltage 1 Hysteresis 1 Symbol IOHE = 0mA IOLE = 2.0mA V mV ppm/°C HA16129AFPJ Test Circuits • Vout test circuit Units: Resistors Ω Capacitors F Icont A VCC Vout VCC STBY CS CONT Vout STBYadj NMI HA16129AFPJ RES NMIsns Voadj P-RUN Rf f = 1kHz duty = 50% 180k NMIadj Cf RR 3300p 180k CR 0.1µ RT 390k GND CRES 1500p Here, the Vout voltage is for a VCC of 12V, and Icont is monitored as Vout is varied. • ICC test circuit IIN Iout VCC Vout VCC STBY CS CONT Vout STBYadj NMI HA16129AFPJ RES *ICC = IIN + Iout NMIsns Voadj f = 1kHz duty = 50% P-RUN Rf 180k NMIadj Cf RR 3300p 180k CR 0.1µ RT 390k GND CRES 1500p • Test circuit for other parameters VCC VCC STBY CS CONT Vout STBYadj NMI HA16129AFPJ V Frequency counter RES f = 1kHz duty = 50% 180k NMIadj Cf 3300p 180k Rev.1.00 Jun 15, 2005 page 15 of 22 RR CR 0.1µ RT 390k R1 13k NMI VCC detection NMIsns Voadj P-RUN Rf NMI Vout detection GND CRES 1500p R2 390k HA16129AFPJ System Circuit Examples • Example of a basic system STBY 20 Microprocessor PORT STBY 1 P-RUN 2 Rf STBYadj 19 3 Cf RES 18 RES 4 RR NMI 17 NMI 5 CR NMIadj 16 VCC 6 RT 7 CRES 8 GND 9 Voadj CS 12 10 OUTE VCC 11 180k 180k 390k 1500p PORT NMIsns 15 (5 V) VOUT 14 + To other power supplies 200µ CONT 13 IGN SW. 0.2 + Load 0.1µ HA16129AFPJ 3300p BATTERY DS PORT STBY 20 STBY 1 P-RUN 2 Rf STBYadj 19 3 Cf RES 18 RES 4 RR NMI 17 NMI 5 CR 6 RT 7 CRES 8 GND 180k 0.1µ 390k 1500p NMIsns 15 CONT 13 CS 12 10 OUTE VCC 11 To other power supplies R2 VOUT 14 Voadj 9 VCC PORT NMIadj 16 Q1 + 200µ (5V) R1 R3 Q2 0.2 IGN R5 SW. Primary detection + DS D1 R4 Load 180k HA16129AFPJ 3300p Microprocessor • Example of a system using a backup circuit and a primary voltage monitoring circuit BATTERY DZ Backup circuit DS: Schottky diode DZ: Zener diode Rev.1.00 Jun 15, 2005 page 16 of 22 HA16129AFPJ Operating Waveforms Frequency vs. Duty Characteristics 100k RES and OUTE runaway detection lines Ta = 25°C, CR = 0.1µF, RR = 180kΩ, RT = 390kΩ, Rf = 180kΩ, Cf = 3300pF CRES = 1500pF Runaway area OUTE normal recovery line Frequency (Hz) 10k Normal area 1k RES OUTE Monitor Pulse generator VOH: 5V VOL: 0V 100 10 20 30 40 50 60 70 80 90 100 Duty (%) Power On Time (tON) vs. RT Resistance Characteristics 1000 500 Ta = 25°C, VCC = 0 → 12V, Rf = 180kΩ, Cf = 3300pF, CRES = 1500pF Power On Time (tON) (ms) CR = 0.47µF 100 50 CR = 0.1µF CR = 0.033µF 10 5 1 10 50 100 RT Resistance (kΩ) Rev.1.00 Jun 15, 2005 page 17 of 22 500 1000 HA16129AFPJ Clock Off Time (toff) vs. RR Resistance Characteristics 1000 Ta = 25°C, Rf = 180kΩ, Cf = 3300pF, CRES = 1500pF, RT = 390kΩ CR = 0.47µF Clock Off Time (toff) (ms) 500 CR = 0.1µF 100 CR = 0.033µF 50 10 10 50 100 500 1000 RR Resistance (kΩ) Reset Pulse High Time (tRH) vs. RR Resistance Characteristics 1000 Ta = 25°C, Rf = 180kΩ, Cf = 3300pF, RT = 390kΩ, CRES = 1500pF CR = 0.47µF Reset Pulse High Time (tRH) (ms) 500 CR = 0.1µF 100 50 CR = 0.033µF 10 5 1 10 50 100 RR Resistance (kΩ) Rev.1.00 Jun 15, 2005 page 18 of 22 500 1000 HA16129AFPJ Reset Pulse Low Time (tRL) vs. RR Resistance Characteristics 1000 Reset Pulse Low Time (tRL) (ms) 500 Ta = 25°C, Rf = 180kΩ, Cf = 3300pF, RT = 390kΩ, CRES = 1500pF CR = 0.47µF 100 CR = 0.1µF 50 10 CR = 0.033µF 5 1 10 50 100 500 1000 RR Resistance (kΩ) RES Delay Time and Recovery Time (tr) vs. Rf Resistance Characteristics 10000 RES Delay Time and Recovery Time (tr) (µs) 5000 Ta = 25°C, Cf = 3300pF, RR = 180kΩ, RT = 390kΩ, CR = 0.1µF CRES = 0.01µF CRES = 1500pF 1000 500 100 CRES = 560pF 50 10 10 50 100 Rf Resistance (kΩ) Rev.1.00 Jun 15, 2005 page 19 of 22 500 1000 HA16129AFPJ RES Delay Time and Disable Time (tRES) vs. Rf Resistance Characteristics 10000 RES Delay Time and Disable Time (tRES) (µs) 5000 Ta = 25°C, Cf = 3300pF, RR = 180kΩ, CR = 0.1µF, RT = 390kΩ CRES = 0.01µF 1000 CRES = 1500pF 500 100 CRES = 560pF 50 10 10 100 50 500 1000 Rf Resistance (kΩ) Output Voltage vs. Roadj Resistance (to Ground) Characteristics 6.0 Ta = 25°C, VCC = 12V, Cf = 3300pF, Rf = 180kΩ, CR = 0.1µF, RR = 180kΩ, RT = 390kΩ, CRES = 1500pF 5.8 Output Voltage (V) 5.6 VCC 5.4 Vout Voadj V Roadj 5.2 5.0 4.8 100 500 1000 Roadj Resistance (to Ground) (kΩ) Rev.1.00 Jun 15, 2005 page 20 of 22 5000 →• HA16129AFPJ Output Voltage vs. Roadj Resistance (to Vout) Characteristics 5.0 Ta = 25°C, VCC = 12V, Cf = 3300pF, Rf = 180kΩ, CR = 0.1µF, RR = 180kΩ, RT = 390kΩ, CRES = 1500pF Output Voltage Vout (V) 4.8 4.6 4.4 VCC 4.2 Vout Voadj V Roadj 4.0 3.8 100 k 500 k 5M 1M 10 M Roadj Resistance (to Vout) (kΩ) ICONT Current vs. Vout Voltage Characteristics 40 Ta = 25°C, Cf = 3300pF, Rf = 180kΩ, CR = 0.1µF, RR = 180kΩ, RT = 390kΩ, CRES = 1500pF ICONT Current (µA) 30 20 10 0 4.92 4.94 4.96 4.98 Vout Voltage (V) 5.00 ICONT A Vout Vout CONT CS VCC Vout Voltage (V) Rev.1.00 Jun 15, 2005 page 21 of 22 VCC 12 V 5.02 HA16129AFPJ Package Dimensions JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-A *1 Previous Code FP-20DA MASS[Typ.] 0.31g NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F D 20 11 bp c1 c HE *2 E b1 Index mark Reference Symbol Terminal cross section Z e *3 Nom Max D 12.6 13 E 5.5 A2 10 1 A1 bp x Dimension in Millimeters Min M 0.00 0.10 0.20 0.34 0.42 0.50 2.20 A L1 bp 0.40 b1 c A c A1 θ y L Detail F 0.17 θ 0° HE 7.50 0.27 8° 7.80 8.00 1.27 e x 0.12 y 0.15 0.80 Z 0.50 L L Rev.1.00 Jun 15, 2005 page 22 of 22 0.22 0.20 1 1 0.70 1.15 0.90 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0