RENESAS HAT3029R-EL-E

HAT3029R
Silicon N/P Channel Power MOS FET
Power Switching
REJ03G1597-0600
Rev.6.00
Oct 16, 2007
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
6
87
7 8
D D
5
12
34
2
G
5 6
D D
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
4
G
S1
Nch
S3
Pch
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Pch Note3
Tch
Tstg
Ratings
Nch
30
±20
6
48
Pch
–30
-20/+10
–6
–48
6
–6
1.3
2.0
150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 1 of 9
Unit
V
V
A
A
A
W
W
°C
°C
HAT3029R
Electrical Characteristics
(Ta = 25°C)
• N Channel
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Body–drain diode reverse recovery
time
Min
30
—
—
1.0
—
—
6
—
—
—
—
—
—
—
—
Typ
—
—
—
—
27
40
10
410
110
41
3.1
1.1
1.1
5.4
10
Max
—
±0.1
1
2.5
34
58
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
—
—
—
—
36
3.0
0.84
20
—
—
1.10
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note4
ID = 3 A, VGS = 4.5 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 6 A
VGS = 10 V, ID = 3 A
VDD ≅ 10 V
RL = 3.33 Ω
Rg = 4.7 Ω
IF = 6 A, VGS = 0 Note4
IF = 6 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
• P Channel
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
Min
–30
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
–1.0
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25
36
10
1330
215
155
11.5
3.2
4.4
18
19
47
8
–0.84
±0.1
–1
–2.5
32
53
—
—
—
—
—
—
—
—
—
—
—
–1.10
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VGS = -20,+10 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –3 A, VGS = –10 V Note4
ID = –3 A, VGS = – 4.5 V Note4
ID = –3 A, VDS = –10 V Note4
trr
—
20
—
ns
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
Notes: 4. Pulse test
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 2 of 9
VDS = –10 V
VGS = 0
f = 1MHz
VDD = –10 V
VGS = –4.5 V
ID = -6 A
VGS = –10 V, ID = –3 A
VDD ≅ –10 V
RL = 3.33 Ω
Rg = 4.7 Ω
IF = –6 A, VGS = 0 Note4
IF = –6 A, VGS = 0
diF/ dt =100A/µs
HAT3029R
Main Characteristics
• N Channel
Power vs. Temperature Derating
Maximum Safe Operation Area
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW ≤ 10 s
1.2
0.8
0.4
Drain Current ID (A)
Channel Dissipation Pch (W)
1.6
PW
DC
1
1m
=1
s
0m
s(
Op
1s
era
tio
n(
PW
0.1 Operation in
≤1
this area is
limited by RDS(on)
ho
t)
No
0 ste 5
)
0.01
Ta = 25°C
0
50
100
150
0.001 1 shot Pulse
0.1
1
200
3.4 V
Typical Transfer Characteristics
10
Pulse Test
3.2 V
4.5 V
3V
6
4
2.8 V
2
VGS = 2.6 V
Drain Current ID (A)
8
10 V
100
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
10
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Drain Current ID (A)
10
µs
0µ
s
10
10
Tc = 75°C
VDS = 10 V
Pulse Test
8
6
4
2
25°C
–25°C
2
4
6
8
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
250
Pulse Test
200
150
ID = 5 A
100
2A
50
1A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 3 of 9
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
1000
Pulse Test
500
200
VGS = 4.5 V
100
50
10 V
20
10
1
10
100
Drain Current ID (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
ID = 2 A, 5 A, 10 A
60
4.5 V
40
2 A, 5 A, 10 A
20
VGS = 10 V
0
-25
0
25
50
75
100 125 150
Tc = –25°C
10
25°C
75°C
1
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
10000
Capacitance C (pF)
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
50
20
VGS = 0
f = 1 MHz
3000
1000
Ciss
300
Coss
100
Crss
30
10
10
0.1
50
1
10
100
10
15
20
25
30
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 6 A
VGS
VDD = 25 V
10 V
5V
VDS
16
12
20
8
VDD = 25 V
10 V
5V
10
0
5
Reverse Drain Current IDR (A)
40
30
0
2
4
6
8
Gate Charge Qg (nc)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 4 of 9
4
0
10
1000
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
100
Drain Current ID (A)
100
Drain to Source Voltage VDS (V)
1000
Case Temperature Tc (°C)
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
Switching Time t (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT3029R
100
td(off)
10
td(on)
tf
tr
1
0.1
1
10
Drain Current ID (A)
100
HAT3029R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
16
10 V
12
8
5V
VGS = 0 V
4
Pulse Test
0.4
0
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
0.1
D=1
0.5
0.2
0.1
0.05
θch - f(t) = γs (t) x θch - f
θch - f = 143°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.01
lse
t pu
o
1sh
PDM
D=
0.001
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
D.U.T.
RL
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
90%
td(on)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 5 of 9
10%
tr
10%
90%
td(off)
tf
HAT3029R
• P Channel
Power vs. Temperature Derating
Maximum Safe Operation Area
1.2
-100
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW ≤ 10 s
0.8
0.4
PW
DC
0m
s(
1s
Op
era
tio
Operation in
n(
PW
-0.1 this area is
≤1
ho
t)
No
0 ste 5
)
limited by RDS(on)
-0.01
50
100
150
200
-0.001 1 shot Pulse
-0.1
-1
Typical Transfer Characteristics
-20
-10 V
VDS = -10 V
Pulse Test
Pulse Test
-3.2 V
-3.5 V
-12
-3 V
-8
-2.8 V
-2.5 V
-4
Drain Current ID (A)
-4 V
-16
-16
-12
-8
−25°C
Tc = 75°C
-4
VGS = -2 V
0
-2
-4
-6
-8
25°C
-10
0
Drain to Source Voltage VDS (V)
-6 A
-120
-80
-3 A
-40
ID = -1 A
Pulse Test
-4
-8
-12
-16
-20
Gate to Source Voltage VGS (V)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 6 of 9
-2
-3
-4
-5
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
-160
-1
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0
-100
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
-20
-10
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Drain Current ID (A)
=1
Ta = 25°C
0
Drain to Source Saturation Voltage
VDS(on) (mV)
10
µs
0µ
1m s
s
10
-10
-1
Drain Current
Channel Dissipation Pch (W)
1.6
1000
Pulse Test
500
200
-4.5 V
100
50
VGS = -10 V
20
10
-0.1 -0.3
-1
-3
-10
-30
Drain Current ID (A)
-100
Forward Transfer Admittance |yfs| (S)
100
Pulse Test
80
-6 A
60
-4.5 V
40
-1, -3 A
20
ID = -1, -3, -6 A
VGS = -10 V
0
−25
0
25
50
75
100 125
150
100
Tc = –25°C
10
1
0.3
VDS = -10 V
Pulse Test
0.1
-0.1
-0.3
-1
-10
-3
-30
Case Temperature Tc (°C)
Drain Current ID (A)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
3000
Capacitance C (pF)
500
200
100
50
20
10
5
di/dt = -100 A/µs
VGS = 0, Ta = 25°C
2
-100
VGS = 0
f = 1 MHz
Ciss
1000
300
Coss
100
Crss
30
10
3
1
-0.3
-1
-3
-10
-30
0
-100
-10
-20
-30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
0
VDD = -5 V
-10 V
-25 V
-10
-4
VDD = -5 V
-10 V
-25 V
-20
-8
VDS
VGS
-30
-12
ID = -6 A
8
-16
16
24
32
Gate Charge Qg (nc)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 7 of 9
40
1000
Switching Time t (ns)
0
0
75°C
3
10000
-40
25°C
30
1000
1
-0.1
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT3029R
VGS = -10 V, VDD = -10 V
PW = 5 µs, Rg = 4.7 Ω
100
td(off)
tr
td(on)
10
tf
1
-0.1
-0.3
-1
-3
-10
-30
Drain Current ID (A)
-100
HAT3029R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
-20
-16
-10 V
-12
-8
-5 V
VGS = 0 V
-4
Pulse Test
0
-0.4
-0.8
-1.2
-1.6
-2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
0.5
1
0.2
0.1
0.05
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 143°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.01
t
sho
lse
pu
PDM
1
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Vin
-10 V
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vout
td(on)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 8 of 9
90%
90%
VDD
= -10 V
10%
tr
10%
td(off)
tf
HAT3029R
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
e
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol
Min
A1
A
L1
L
y
Detail F
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Part Name
HAT3029R-EL-E
Note:
Quantity
2500 pcs
Shipping Container
Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 9 of 9
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
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please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
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result of errors or omissions in the information included in this document.
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(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
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movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
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any other inquiries.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
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