Test P880 Pages 1 and 2

WESTCODE
An
Date:- 23 Aug, 2011
Data Sheet Issue:- P1
IXYS Company
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0360NB25A
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VCES
Collector – emitter voltage
2500
V
VDC link
Permanent DC voltage for 100 FIT failure rate.
1250
V
VGES
Peak gate – emitter voltage
±20
V
MAXIMUM
LIMITS
UNITS
RATINGS
IC(DC)
DC collector current, IGBT
360
A
ICRM
Repetitive peak collector current, tp=1ms, IGBT
720
A
IF(DC)
Continuous DC forward current, Diode
360
A
IFRM
Repetitive peak forward current, tp=1ms, Diode
720
A
IFSM
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
2850
A
IFSM2
Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4)
3130
A
PMAX
Maximum power dissipation, IGBT (Note 2)
1.8
KW
(di/dt)cr
Critical diode di/dt (note 3)
1000
A/µs
Tj
Operating temperature range.
-40 to +125
°C
Tstg
Storage temperature range.
-40 to +125
°C
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
Prospective Data Sheet T0360NB25A Issue P1
Page 1 of 7
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Characteristics
IGBT Characteristics
PARAMETER
MIN
TYP
MAX
TEST CONDITIONS
UNITS
-
2.10
2.40
IC = 360A, VGE = 15V, Tj = 25°C
V
-
2.95
3.25
IC = 360A, VGE = 15V
V
Threshold voltage
-
-
1.32
rT
Slope resistance
-
-
5.37
VGE(TH)
Gate threshold voltage
-
5.8
6.3
VCE = VGE, IC = 30mA
V
ICES
Collector – emitter cut-off current
5
10
VCE = VCES, VGE = 0V
mA
IGES
Gate leakage current
-
2
±7
VGE = ±20V
µA
Cies
Input capacitance
-
50
-
VCE = 25V, VGE = 0V, f = 1MHz
nF
td(on)
Turn-on delay time
-
0.95
-
tr(V)
Rise time
-
2
-
IC =360A, VCE =1250V, di/dt=700A/µs
µs
Qg(on)
Turn-on gate charge
-
3
-
VGE = ±15V, Ls=200nH
µC
Eon
Turn-on energy
-
0.85
-
Rg(ON)= 7.5Ω, Rg(OFF)=18Ω, CGE=14.7nF
J
td(off)
Turn-off delay time
-
1.3
-
Integral diode used as freewheel diode
µs
tf(I)
Fall time
-
7.5
-
(Note 3 & 4)
µs
Qg(off)
Turn-off gate charge
-
2.5
-
Eoff
Turn-off energy
-
0.6
-
VCE(sat)
Collector – emitter saturation voltage
VT0
ISC
Short circuit current
V
Current range: 120 – 360A
mΩ
µs
µC
J
VGE=+15V, VCC=1250V, VCEmax≤VCES,
tp≤10µs
-
1000
-
MIN
TYP
MAX
TEST CONDITIONS
-
2.05
2.35
IF = 360A, Tj =25°C
V
-
2.25
2.55
IF = 360A
V
A
Diode Characteristics
PARAMETER
UNITS
VF
Forward voltage
VTo
Threshold voltage
-
-
1.43
rT
Slope resistance
-
-
3.11
Irm
Peak reverse recovery current
-
240
-
Qrr
Recovered charge
-
320
-
IF = 360A, Vr=1250V, di/dt=700A/µs,
µC
trr
Reverse recovery time, 50% chord
-
0.9
-
VGE = -15V
µs
Er
Reverse recovery energy
-
0.3
-
MIN
TYP
MAX
TEST CONDITIONS
UNITS
-
-
54.1
Double side cooled
K/kW
-
-
84.3
Collector side cooled
K/kW
-
-
152
Emitter side cooled
K/kW
-
-
73
Double side cooled
K/kW
V
Current range 120-360A
mΩ
A
J
Thermal Characteristics
PARAMETER
RthJK
RthJK
Thermal resistance junction to sink, IGBT
Thermal resistance junction to sink, Diode
-
-
112
Cathode side cooled
K/kW
-
-
210
Anode side cooled
K/kW
Note 2
F
Mounting force
8
-
12
Wt
Weight
-
0.5
-
kN
kg
Notes:1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Prospective Data Sheet T0360NB25A Issue P1
Page 2 of 7
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
Figure 2 – Typical output characteristic
1000
10000
T0360NB25A
Issue P1
T0360NB25A
Issue P1
V GE =+15V
T j =25°C
800
25°C
125°C
Collector current - Ic(A)
Collector current - IC (A)
1000
100
600
400
10
V GE = 20V
V GE = 17V
V GE = 15V
V GE = 12V
V GE = 10V
200
1
0
0
1
2
3
4
5
6
7
8
0
Collector to emitter saturation voltage - V CE(sat) (V)
1
2
3
Collector to emitter saturation voltage - V CE(sat) (V)
4
Figure 4 – Typical turn-on delay time vs gate
resistance
Figure 3 – Typical output characteristic
1000
4
V C E =1250V
I C =360A
V G E =±15V
C G E =33nF
T j =125°C
T0360NB25A
Issue P1
T j =125°C
T0360N B 25A
Issue P 1
360A
800
200A
Turn-on delay time - td(on)(µs)
Collector current - I c(A)
3
600
400
1
V GE = 20V
V GE = 17V
V GE = 15V
V GE = 12V
V GE = 10V
200
2
0
0
0
1
2
3
4
Collector to em itter saturation voltage - V CE(sat) (V)
Prospective Data Sheet T0360NB25A Issue P1
5
0
5
10
15
20
25
30
G ate resistan ce - R G (on) (Ω )
Page 3 of 7
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Figure 5 – Typical turn-off delay time vs. gate
resistance
Figure 6 – Typical turn-on energy vs. collector current
1000
3
V CE=1250V
V GE=±15V
IC=360A
C GE=14.7nF
T j=125°C
T0360NB25A
Issue P1
T0360NB25A
Issue P1
R G(on)=7.5Ω
C GE=14.7nF
V GE=±15V
Tj=125°C
Turn-on energy per pulse - E (on)(mJ)
Turn-off delay time - td(off)(µs)
800
2
1
V CE=1250V
V CE=900V
600
V CE=600V
400
200
0
0
5
10
15
20
25
30
35
40
45
0
100
Gate resistance - R G(off) (Ω)
Figure 7 – Typical turn-on energy vs. di/dt
300
400
500
Figure 8 – Typical turn-off energy vs. collector current
2000
800
V CE=1250V
V GE=±15V
T j=125°C
R G(off)=18Ω
C GE=14.7nF
V GE=±15V
T j=125°C
T0360TB25A
Issue P1
1500
T0360NB25A
Issue P1
V CE=1250V
600
Turn-on energy per pulse - E(off)(mJ)
Turn-on energy per pulse - E(on)(mJ)
200
Collector current - IC (A)
1000
IC=360A
V CE=1000V
400
V CE=600V
200
500
IC=200A
0
0
0
200
400
600
800
1000
1200
Commutation rate - di/dt (A/µs)
Prospective Data Sheet T0360NB25A Issue P1
Page 4 of 7
0
100
200
300
Collector current - IC (A)
400
500
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Figure 9 – Turn-off energy vs voltage
Figure 10 – Safe operating area
1000
800
700
V GE=±15V
Maximum LS=200nH
Tj=125°C
T0360NB25A
Issue P1
RG(off)=18Ω
C GE=14.7nF
V GE=±15V
Tj=125°C
800
IC=360A
600
T0360NB25A
Issue P1
Collector current - IC (A)
Turn-off energy - Eoff (mJ)
IC=300A
500
IC=200A
400
IC=100A
300
600
400
200
200
100
0
400
0
600
800
1000
1200
1400
0
500
Collector-emitter voltage - V CE (V)
Figure 11 – Typical diode forward characteristics
10000
1000
1500
2000
2500
3000
Gollector-emitter voltage - V CE (V)
Figure 12 – Typical recovered charge
400
T0360NB25A
Issue P1
T0360NB25A
Issue P1
Tj=125°C
IC =360A
T j=25°C
T j=125°C
Typical recovered charge - Qrr (µC)
Instantaneous forward current - I F (A)
1000
100
300
IC=200A
200
10
100
1
0
1
2
3
4
Instantaneous forward voltage - V F (V)
Prospective Data Sheet T0360NB25A Issue P1
5
0
200
400
600
800
1000
1200
Commutation rate - di/dt (A/µs)
Page 5 of 7
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Figure 13 – Typical reverse recovery current
400
Figure 14 – Typical reverse recovery time
3
T0360NB25A
Issue P1
T0360NB25A
Issue P1
T j=125°C
T j=125°C
300
Typical reverse recovery time - trr (µs)
Typical reverse recovery current - Irm (A)
IC =360A
IC =200A
200
2
1
IC =360A
IC =200A
100
0
0
200
400
600
800
1000
1200
0
Commutation rate - di/dt (A/µs)
1
1000
1200
T0360NB25A
Issue P1
0.1
Transient thermal impedance junction to sink (K/W)
Transient thermal impedance junction to sink (K/W)
800
Anode
Cathode
Double Side
Emitter
Collector
Double Side
0.01
0.001
0.0001
0.00001
0.00001 0.0001
600
Figure 16 – Transient thermal impedance (Diode)
T0360NB25A
Issue P1
0.1
400
Commutation rate - di/dt (A/µs)
Figure 15 – Transient thermal impedance (IGBT)
1
200
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
0.00001
0.00001 0.0001
Prospective Data Sheet T0360NB25A Issue P1
0.001
0.01
0.1
1
10
100
Time (s)
Time (s)
Page 6 of 7
August, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Outline Drawing & Ordering Information
171A107
ORDERING INFORMATION
T0360
NB
Fixed type
Code
Fixed Outline
Code
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: [email protected]
(Please quote 10 digit code as below)
25
A
Fixed format code
Voltage Grade
VCES/100
25
Typical order code: T0360NB25A (VCES = 2500V)
WESTCODE
An
IXYS Company
www.westcode.com
www.ixys.net
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected]
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the
conditions and limits contained in this report.
Prospective Data Sheet T0360NB25A Issue P1
Page 7 of 7
August, 2011