SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs. 500V/1000V Depletion-Mode Power MOSFETs TO-247 HVDCin D Q 4 S R D Å0.283 1 2 A A1 A2 b b1 b2 C D E e J K L L1 P Q R S 0.669 [16.99] ‘Normally-On’ Power MOSFETs for Simpler, More Efficient High Voltage Active Loads, Current Control and Line Interface Applications K M D B M ÅP E 3 L1 C JANUARY, 2006 Type H TO-247 Description L A1 Type T TO-268 Depletion-Mode Power MOSFETs operate in a ‘normally-on’ mode, not requiring energy or gate voltage for turn on. The operating mode, with internal diode and enhanced linear operating capability make them ideal for dynamic loads applications, current control: current sources and current regulators, and biasing off the high voltage DC line in power systems. b b1 C b2 e Type Y TO-220 Type U TO-251 M Type Y TO-252 C A M A This family offers 500V and 1000V, with low and high current options from 100mA to 20A. Package options include surface mountable D-Pak and D3-Pak options, as well as the leaded TO-251, TO-220 and TO-247. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 L4 Benefits Applications • • • • • • • • • • • • • • Simplified Control Enables Linear Control for High Voltage Applications (500V/1000V) • Reduce Line Power Dissipation for High Line Input L3 3 L L4 b e1 e A2 b1 D1 Features c A1 E1 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) 4 Current Regulation Solid-State Relays Level Shifting Load Switch Active Loads Start-Up Circuits Power Active Filters BACK VIEW A A1 C2 L2 CISS(TYP) PD(25˚C) Re(JC) Package IXTY02N50D IXTU02N50D IXTP02N50D IXTH20N50D IXTT20N50D IXTY01N100D IXTU01N100D IXTP01N100D IXTH10N100D IXTT10N100D 500 V 500 V 500 V 500 V 500 V 1000 V 1000 V 1000 V 1000 V 1000 V 0.2 A 0.2 A 0.2 A 20 A 20 A 0.1 A 0.1 A 0.1 A 10 A 10 A 30.0 Ω 30.0 Ω 30.0 Ω 0.33 Ω 0.33 Ω 0.33 Ω 110 Ω 110 Ω 1.40 Ω 1.40 Ω 120 pF 120 pF 120 pF 2500 pF 2500 pF 120 pF 120 pF 120 pF 2500 pF 2500 pF 25 W 25 W 25 W 400 W 400 W 25 W 25 W 25 W 400 W 400 W 5.00 K/W 5.00 K/W 5.00 K/W 0.31 K/W 0.31 K/W 5.00 K/W 5.00 K/W 5.00 K/W 0.31 K/W 0.31 K/W TO-252 TO-251 TO-220 TO-247 TO-268 TO-252 TO-251 TO-220 TO-247 TO-268 4 D1 D 4 H 3 1 L4 2 L1 b2 e b C 0.653 [16.59] L3 A2 0.531 [13.49] RDS(on) 0.197 [5.00] ID(25˚C) SYM E1 0.864 [21.95] VDSS UVLO Vreg VSUP 7 2 C3 220nF R1 VOUT µP 13V 4 IN C1 GND ChargPReg 75k 6 GATE 5 IXI858 / IXI859 B MILLIMETERS MIN MAX 2.19 2.38 0.89 1.14 0 0.10 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.60 0.90 1.15 1.52 2.54 2.92 P E A A D F SYM Q H1 A b b1 c D E e F H1 J1 k L L1 P Q D 1 2 3 L1 C L INCHES MIN MAX .170 .190 .025 .040 .045 .065 .014 .022 .580 .630 .390 .420 .100 BSC .045 .055 .230 .270 .090 .110 0 .015 .500 .550 .110 .230 .139 .161 .100 .125 MILLIMETERS MIN MAX 4.32 4.83 0.64 1.02 1.15 1.65 0.35 0.56 14.73 16.00 9.91 10.66 2.54 BSC 1.14 1.40 5.85 6.85 2.29 2.79 0 0.38 12.70 13.97 2.79 5.84 3.53 4.08 2.54 3.18 c b e b1 J1 kMCAS NOTE: This drawing will meet all dimensions requirement of JEDEC outline TO-220 AB. TO-251 E Part Number 8 Vclamp C Vzener TO-268 Depletion-Mode Power MOSFETs Summary Table VCAP 1 NOTE: 1. This drawing meets all dimensions requirement of JEDEC outlines TO-252AA except L2 dimension. 2. All metal surface are tin plated except trimmed area. 0.500 [12.70] ‘Normally-On’ Operation Low RDS(ON) and Fast Switching Linear Mode Tolerant Useable Body Diode Improved Cost Efficiency 2 INCHES MIN MAX .086 .094 .035 .045 0 .004 .025 .035 .030 .045 .205 .215 .018 .023 .018 .023 .235 .245 .170 .205 .250 .265 .170 .205 .090 BSC .180 BSC .370 .410 .020 .040 .025 .040 .024 .036 .045 .060 .100 .115 SYM c1 L2 H 1 VCC C4 TO-220 D IXTU01N100D IXTY01N100D IXTP01N100D IXTH10N100D IXTT10N100D Rccs Rbias L1 NOTE: This drawing will meet all dimensions requirement of JEDEC outlines TO-247 AD. 4 L1 IXTU02N50D IXTY02N50D IXTP02N50D IXTH20N50D IXTT20N50D Depletion MOSFET TO-252 E b2 In high voltage applications, Depletion-Mode Power MOSFETs are ideal for reducing power dissipation. A resistor normally used in these types of applications experiences dissipation proportional to the square of the input voltage, reducing efficiency and increasing cost due to the need for high cost power resistors. Depletion-Mode Power MOSFETs can be used to replace the line interface resistor with a near constant current source, reducing power dissipation, cost and circuit board area. MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC -0.25 -0.64 19.81 20.32 3.81 4.32 3.55 3.65 5.59 6.20 4.32 4.83 6.15 BSC 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) 0.552 [14.02] J Fabricated using IXYS low on-resistance HDMOS™ process, they provide for simplified control and reduced ëhigh lineí voltage dissipation when used for line interface in off-line applications. Ideal applications include current regulation, solid-state relays, level shifting, load switch, active loads, start-up circuits and active power filters. These devices shine in high energy efficiency applications as a ‘normally-on’ switch, as they do not require energy or voltage for turn-on. With the high degree of current regulation, these devices can act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. These unique MOSFETs can also be used as active circuit protection to limit current flow during an overload or short-circuit. INCHES MIN MAX .205 .190 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC -.010 -.025 .780 .800 .150 .170 .140 .144 .220 .244 .170 .190 .242 BSC SYM A B A A2 HVDCou Blocking Diode 0?-8? L 0.118 [3.00] 0.215 [5.46] RECOMMENDED MINIMUM FOOT PRINT FOR SMD A A1 A2 b b2 C C2 D .201 D1 E E1 e H L L1 L2 L3 L4 INCHES MIN MAX .193 .106 .114 .001 .010 .045 .057 .075 .083 .016 .026 .057 .063 .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) MILLIMETERS MIN MAX 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.10 18.70 2.70 2.40 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 A E b2 c1 L2 4 D L1 1 2 L3 3 H L b b1 e SYM A A1 b b1 b2 c c1 D E e e1 H L L1 L2 L3 INCHES MIN MAX .086 .094 .035 .045 .025 .035 .030 .045 .205 .215 .018 .023 .018 .023 .235 .245 .250 .265 .090 BSC .180 BSC .670 .700 .350 .380 .075 .090 .024 .036 .045 .060 MILLIMETERS MIN MAX 2.19 2.38 0.89 1.14 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 6.35 6.73 2.28 BSC 4.57 BSC 17.02 17.78 8.89 9.65 1.91 2.28 0.60 0.90 1.15 1.52 c A1 e1 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) NOTE: 1. This drawing meets all dimensions requirement of JEDEC outlines TO-251AA except L2 dimension. 2. All metal surface are tin plated except trimmed area. SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs. 500V/1000V Depletion-Mode Power MOSFETs TO-247 HVDCin D Q 4 S R D Å0.283 1 2 A A1 A2 b b1 b2 C D E e J K L L1 P Q R S 0.669 [16.99] ‘Normally-On’ Power MOSFETs for Simpler, More Efficient High Voltage Active Loads, Current Control and Line Interface Applications K M D B M ÅP E 3 L1 C JANUARY, 2006 Type H TO-247 Description L A1 Type T TO-268 Depletion-Mode Power MOSFETs operate in a ‘normally-on’ mode, not requiring energy or gate voltage for turn on. The operating mode, with internal diode and enhanced linear operating capability make them ideal for dynamic loads applications, current control: current sources and current regulators, and biasing off the high voltage DC line in power systems. b b1 C b2 e Type Y TO-220 Type U TO-251 M Type Y TO-252 C A M A This family offers 500V and 1000V, with low and high current options from 100mA to 20A. Package options include surface mountable D-Pak and D3-Pak options, as well as the leaded TO-251, TO-220 and TO-247. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 L4 Benefits Applications • • • • • • • • • • • • • • Simplified Control Enables Linear Control for High Voltage Applications (500V/1000V) • Reduce Line Power Dissipation for High Line Input L3 3 L L4 b e1 e A2 b1 D1 Features c A1 E1 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) 4 Current Regulation Solid-State Relays Level Shifting Load Switch Active Loads Start-Up Circuits Power Active Filters BACK VIEW A A1 C2 L2 CISS(TYP) PD(25˚C) Re(JC) Package IXTY02N50D IXTU02N50D IXTP02N50D IXTH20N50D IXTT20N50D IXTY01N100D IXTU01N100D IXTP01N100D IXTH10N100D IXTT10N100D 500 V 500 V 500 V 500 V 500 V 1000 V 1000 V 1000 V 1000 V 1000 V 0.2 A 0.2 A 0.2 A 20 A 20 A 0.1 A 0.1 A 0.1 A 10 A 10 A 30.0 Ω 30.0 Ω 30.0 Ω 0.33 Ω 0.33 Ω 0.33 Ω 110 Ω 110 Ω 1.40 Ω 1.40 Ω 120 pF 120 pF 120 pF 2500 pF 2500 pF 120 pF 120 pF 120 pF 2500 pF 2500 pF 25 W 25 W 25 W 400 W 400 W 25 W 25 W 25 W 400 W 400 W 5.00 K/W 5.00 K/W 5.00 K/W 0.31 K/W 0.31 K/W 5.00 K/W 5.00 K/W 5.00 K/W 0.31 K/W 0.31 K/W TO-252 TO-251 TO-220 TO-247 TO-268 TO-252 TO-251 TO-220 TO-247 TO-268 4 D1 D 4 H 3 1 L4 2 L1 b2 e b C 0.653 [16.59] L3 A2 0.531 [13.49] RDS(on) 0.197 [5.00] ID(25˚C) SYM E1 0.864 [21.95] VDSS UVLO Vreg VSUP 7 2 C3 220nF R1 VOUT µP 13V 4 IN C1 GND ChargPReg 75k 6 GATE 5 IXI858 / IXI859 B MILLIMETERS MIN MAX 2.19 2.38 0.89 1.14 0 0.10 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.60 0.90 1.15 1.52 2.54 2.92 P E A A D F SYM Q H1 A b b1 c D E e F H1 J1 k L L1 P Q D 1 2 3 L1 C L INCHES MIN MAX .170 .190 .025 .040 .045 .065 .014 .022 .580 .630 .390 .420 .100 BSC .045 .055 .230 .270 .090 .110 0 .015 .500 .550 .110 .230 .139 .161 .100 .125 MILLIMETERS MIN MAX 4.32 4.83 0.64 1.02 1.15 1.65 0.35 0.56 14.73 16.00 9.91 10.66 2.54 BSC 1.14 1.40 5.85 6.85 2.29 2.79 0 0.38 12.70 13.97 2.79 5.84 3.53 4.08 2.54 3.18 c b e b1 J1 kMCAS NOTE: This drawing will meet all dimensions requirement of JEDEC outline TO-220 AB. TO-251 E Part Number 8 Vclamp C Vzener TO-268 Depletion-Mode Power MOSFETs Summary Table VCAP 1 NOTE: 1. This drawing meets all dimensions requirement of JEDEC outlines TO-252AA except L2 dimension. 2. All metal surface are tin plated except trimmed area. 0.500 [12.70] ‘Normally-On’ Operation Low RDS(ON) and Fast Switching Linear Mode Tolerant Useable Body Diode Improved Cost Efficiency 2 INCHES MIN MAX .086 .094 .035 .045 0 .004 .025 .035 .030 .045 .205 .215 .018 .023 .018 .023 .235 .245 .170 .205 .250 .265 .170 .205 .090 BSC .180 BSC .370 .410 .020 .040 .025 .040 .024 .036 .045 .060 .100 .115 SYM c1 L2 H 1 VCC C4 TO-220 D IXTU01N100D IXTY01N100D IXTP01N100D IXTH10N100D IXTT10N100D Rccs Rbias L1 NOTE: This drawing will meet all dimensions requirement of JEDEC outlines TO-247 AD. 4 L1 IXTU02N50D IXTY02N50D IXTP02N50D IXTH20N50D IXTT20N50D Depletion MOSFET TO-252 E b2 In high voltage applications, Depletion-Mode Power MOSFETs are ideal for reducing power dissipation. A resistor normally used in these types of applications experiences dissipation proportional to the square of the input voltage, reducing efficiency and increasing cost due to the need for high cost power resistors. Depletion-Mode Power MOSFETs can be used to replace the line interface resistor with a near constant current source, reducing power dissipation, cost and circuit board area. MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC -0.25 -0.64 19.81 20.32 3.81 4.32 3.55 3.65 5.59 6.20 4.32 4.83 6.15 BSC 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) 0.552 [14.02] J Fabricated using IXYS low on-resistance HDMOS™ process, they provide for simplified control and reduced ëhigh lineí voltage dissipation when used for line interface in off-line applications. Ideal applications include current regulation, solid-state relays, level shifting, load switch, active loads, start-up circuits and active power filters. These devices shine in high energy efficiency applications as a ‘normally-on’ switch, as they do not require energy or voltage for turn-on. With the high degree of current regulation, these devices can act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. These unique MOSFETs can also be used as active circuit protection to limit current flow during an overload or short-circuit. INCHES MIN MAX .205 .190 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC -.010 -.025 .780 .800 .150 .170 .140 .144 .220 .244 .170 .190 .242 BSC SYM A B A A2 HVDCou Blocking Diode 0?-8? L 0.118 [3.00] 0.215 [5.46] RECOMMENDED MINIMUM FOOT PRINT FOR SMD A A1 A2 b b2 C C2 D .201 D1 E E1 e H L L1 L2 L3 L4 INCHES MIN MAX .193 .106 .114 .001 .010 .045 .057 .075 .083 .016 .026 .057 .063 .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) MILLIMETERS MIN MAX 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.10 18.70 2.70 2.40 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 A E b2 c1 L2 4 D L1 1 2 L3 3 H L b b1 e SYM A A1 b b1 b2 c c1 D E e e1 H L L1 L2 L3 INCHES MIN MAX .086 .094 .035 .045 .025 .035 .030 .045 .205 .215 .018 .023 .018 .023 .235 .245 .250 .265 .090 BSC .180 BSC .670 .700 .350 .380 .075 .090 .024 .036 .045 .060 MILLIMETERS MIN MAX 2.19 2.38 0.89 1.14 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 6.35 6.73 2.28 BSC 4.57 BSC 17.02 17.78 8.89 9.65 1.91 2.28 0.60 0.90 1.15 1.52 c A1 e1 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) NOTE: 1. This drawing meets all dimensions requirement of JEDEC outlines TO-251AA except L2 dimension. 2. All metal surface are tin plated except trimmed area.