IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA VGE = 15 V, TVJ = 125°C, RG = 33 Ω ICM = 24 A (RBSOA) Clamped inductive load, L = 300 µH PC TC = 25°C TO-263 AA (IXGA) @ 0.8 VCES 100 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Md Mounting torque with screw M3 Mounting torque with screw M3.5 ↑ C (tab) E TO-220 AB (IXGP) G TJM TJ G C E G = Gate E = Emitter C = Collector TAB = Collector 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 4 g 300 °C Features • Very high freqency IGBT • New generation HDMOS process • International standard package JEDEC TO-220AB and TO-263AA • High peak current handling capability TM Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES V 5.0 V VCE = 0.8, VCES TJ = 25°C 200 µA VGE = 0 V TJ = 125°C 1 mA ±100 nA 2.7 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 © 2002 IXYS All rights reserved 2.1 Applications • PFC circuits • AC motor speed control • DC servo & robot drives • Switch-mode and resonant-mode power supplies • High power audio amplifiers Advantages • Fast switching speed • High power density 97534B (2/02) IXGA12N60C IXGP12N60C TO-220 AB Dimensions Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. 11 S 860 pF 64 pF Cres 15 pF Qg 32 nC 10 nC 10 nC 20 ns 20 ns 60 ns 55 ns 0.09 mJ 20 ns 20 ns gfs IC = IC90; VCE = 10 V, 7 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG tri Inductive load, TJ = 125°°C Eon IC td(off) tfi Eoff = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 0.15 2 - Collector 4 - Collector Bottom Side mJ 85 180 ns 85 180 ns TO-263 AA Outline 0.27 RthJC RthCK Pins: 1 - Gate 3 - Emitter 0.60 mJ 1.25 K/W 0.25 K/W 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGA12N60C 50 100 TJ = 25°C VGE = 15V 13V 11V TJ = 25°C 40 VGE = 15V 80 IC - Amperes IC - Amperes IXGP12N60C 30 9V 20 11V 40 9V 7V 10 13V 60 20 7V 5V 0 5V 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VCE - Volts Fig. 2. Extended Output Characteristics Fig. 1. Saturation Voltage Characteristics 1.75 50 TJ = 125°C VGE = 15V 13V VGE = 15V 11V VCE (sat) - Normalized 40 IC - Amperes 12 30 9V 20 7V IC = 24A 1.50 1.25 IC = 12A 1.00 IC = 6A 0.75 10 5V 0.50 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 30 VCE = 10V f = 1Mhz Ciss 1000 Capacitance - pF IC - Amperes 25 20 15 10 TJ = 125°C Coss 100 Crss 10 5 TJ = 25°C 0 1 3 4 5 6 7 8 9 VGE - Volts Fig. 5. Saturation Voltage Characteristics © 2002 IXYS All rights reserved 10 0 5 10 15 20 25 30 35 VCE-Volts Fig. 6. Junction Capacitance Curves 40 IXGA12N60C 1.5 IXGP12N60C 1.5 3 3 TJ = 125°C TJ = 125°C E(OFF) 0.5 1 E(ON) - millijoules 2 E(ON) IC =24A 1.0 2 E(ON) E(OFF) E(ON) IC = 12A 0.5 1 E(OFF) E(ON) E(OFF) - millijoules 1.0 E(OFF) - milliJoules E(ON) - millijoules RG = 10Ω IC = 6A E(OFF) 0.0 0 5 10 15 20 0 25 0.0 0 10 IC - Amperes 20 30 40 0 60 50 RG - Ohms Fig. 8. Dependence of EON and EOFF on RG. Fig. 7. Dependence of EON and EOFF on IC. 16 100 IC = 12A VCE = 300V 24 IC - Amperes VGE - Volts 12 8 TJ = 125°C 10 RG = 4.7Ω dV/dt < 5V/ns 1 4 0 0.1 0 10 20 30 40 50 0 100 Qg - nanocoulombs 300 400 500 600 VCE - Volts Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 200 D=0.5 ZthJC (K/W) D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1