IXYS IXGP12N60C

IXGA 12N60C VCES = 600 V
IXGP 12N60C IC25 = 24 A
VCE(sat) = 2.7 V
tfi(typ) = 55 ns
HiPerFASTTM IGBT
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
24
A
IC90
TC = 90°C
12
A
ICM
TC = 25°C, 1 ms
48
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 24
A
(RBSOA)
Clamped inductive load, L = 300 µH
PC
TC = 25°C
TO-263 AA (IXGA)
@ 0.8 VCES
100
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
↑ C (tab)
E
TO-220 AB
(IXGP)
G
TJM
TJ
G
C
E
G = Gate
E = Emitter
C
= Collector
TAB = Collector
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
4
g
300
°C
Features
• Very high freqency IGBT
• New generation HDMOS process
• International standard package
JEDEC TO-220AB and TO-263AA
• High peak current handling capability
TM
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250 µA, VGE = 0 V
600
VGE(th)
IC = 250 µA, VGE = VGE
2.5
ICES
V
5.0
V
VCE = 0.8, VCES
TJ = 25°C
200
µA
VGE = 0 V
TJ = 125°C
1
mA
±100
nA
2.7
V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = ICE90, VGE = 15
© 2002 IXYS All rights reserved
2.1
Applications
• PFC circuits
• AC motor speed control
• DC servo & robot drives
• Switch-mode and resonant-mode
power supplies
• High power audio amplifiers
Advantages
• Fast switching speed
• High power density
97534B (2/02)
IXGA12N60C
IXGP12N60C
TO-220 AB Dimensions
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
11
S
860
pF
64
pF
Cres
15
pF
Qg
32
nC
10
nC
10
nC
20
ns
20
ns
60
ns
55
ns
0.09
mJ
20
ns
20
ns
gfs
IC = IC90; VCE = 10 V,
7
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
Inductive load, TJ = 25°°C
IC
= IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
tri
Inductive load, TJ = 125°°C
Eon
IC
td(off)
tfi
Eoff
= IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
0.15
2 - Collector
4 - Collector
Bottom Side
mJ
85
180
ns
85
180
ns
TO-263 AA Outline
0.27
RthJC
RthCK
Pins: 1 - Gate
3 - Emitter
0.60
mJ
1.25
K/W
0.25
K/W
1.
2.
3.
4.
Min. Recommended Footprint
(Dimensions in inches and mm)
Gate
Collector
Emitter
Collector
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGA12N60C
50
100
TJ = 25°C VGE = 15V
13V
11V
TJ = 25°C
40
VGE = 15V
80
IC - Amperes
IC - Amperes
IXGP12N60C
30
9V
20
11V
40
9V
7V
10
13V
60
20
7V
5V
0
5V
0
0
2
4
6
8
0
10
4
8
16
20
VCE - Volts
VCE - Volts
Fig. 2. Extended Output Characteristics
Fig. 1. Saturation Voltage Characteristics
1.75
50
TJ = 125°C
VGE = 15V
13V
VGE = 15V
11V
VCE (sat) - Normalized
40
IC - Amperes
12
30
9V
20
7V
IC = 24A
1.50
1.25
IC = 12A
1.00
IC = 6A
0.75
10
5V
0.50
25
0
0
2
4
6
8
10
50
75
VCE - Volts
100
125
150
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
30
VCE = 10V
f = 1Mhz
Ciss
1000
Capacitance - pF
IC - Amperes
25
20
15
10
TJ = 125°C
Coss
100
Crss
10
5
TJ = 25°C
0
1
3
4
5
6
7
8
9
VGE - Volts
Fig. 5. Saturation Voltage Characteristics
© 2002 IXYS All rights reserved
10
0
5
10
15
20
25
30
35
VCE-Volts
Fig. 6. Junction Capacitance Curves
40
IXGA12N60C
1.5
IXGP12N60C
1.5
3
3
TJ = 125°C
TJ = 125°C
E(OFF)
0.5
1
E(ON) - millijoules
2
E(ON)
IC =24A
1.0
2
E(ON)
E(OFF)
E(ON)
IC = 12A
0.5
1
E(OFF)
E(ON)
E(OFF) - millijoules
1.0
E(OFF) - milliJoules
E(ON) - millijoules
RG = 10Ω
IC = 6A
E(OFF)
0.0
0
5
10
15
20
0
25
0.0
0
10
IC - Amperes
20
30
40
0
60
50
RG - Ohms
Fig. 8. Dependence of EON and EOFF on RG.
Fig. 7. Dependence of EON and EOFF on IC.
16
100
IC = 12A
VCE = 300V
24
IC - Amperes
VGE - Volts
12
8
TJ = 125°C
10
RG = 4.7Ω
dV/dt < 5V/ns
1
4
0
0.1
0
10
20
30
40
50
0
100
Qg - nanocoulombs
300
400
500
600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
1
200
D=0.5
ZthJC (K/W)
D=0.2
D=0.1
0.1 D=0.05
D=0.02
D=0.01
0.01
D = Duty Cycle
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1