Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 20 A I C90 TC = 90°C 10 A I CM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A PC TC = 25°C 100 W Features -55 ... +150 °C l T JM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD G Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C E G = Gate, E = Emitter, l l l Weight C l l C = Collector, TAB = Collector International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l BV CES IC = 4 mA, V GE = 0 V V GE(th) IC = 500 µA, VCE = VGE I CES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, V GE = ±20 V V CE(sat) IC = I C90, VGE = 15 V 1000 2.5 TJ = 25°C TJ = 125°C 10N100U1 10N100AU1 V 5.5 V 400 5 µA mA ±100 nA 3.5 4.0 V V l Advantages l l l © 1997 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost 91753F (3/97) IXGH 10N100U1 IXGH 10N100AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 4 8 S 750 pF 200 pF Cres 30 pF Qg 52 70 nC 13 25 nC 24 45 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 100 ns IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 V CES, RG = Roff = 150 Ω 200 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 550 10N100U1 10N100AU1 800 500 10N100AU1 2 Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 V CES, RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 900 ns 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ns ns 3 mJ 100 ns 200 ns 1.1 mJ 600 1000 ns 10N100U1 10N100AU1 1250 600 2000 1000 ns ns 10N100U1 10N100AU1 5.0 2.5 RthJC TO-247 AD Outline mJ mJ 1.2 K/W RthCK 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 100 A/µs VR = 540 V TJ = 125°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C 6.5 120 50 RthJC 2.75 V 60 A ns ns 1.6 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 10N100U1 IXGH 10N100AU1 Fig. 1 Saturation Characteristics 20 T J = 25°C 18 VGE = 15V Fig. 2 Output Characterstics 13V 80 70 13V 60 14 IC - Amperes IC - Amperes 16 VGE = 15V TJ = 25°C 11V 9V 12 10 8 7V 6 50 11V 40 30 9V 20 4 2 10 0 0 0 1 2 3 4 5 7V 0 2 4 6 8 VCE - Volts Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 T J = 25°C 9 V(sat) - Normalized 7 VCE - Volts VGE = 15V 1.4 8 6 IC = 20A 5 4 IC = 10A 3 IC = 5A 2 IC = 20A 1.3 1.2 1.1 IC = 10A 1.0 0.9 IC = 5A 0.8 1 0 0.7 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 VGE - Volts 20 BV / V(th) - Normalized 14 12 10 8 T J = 125°C 6 4 T J = 25°C TJ = - 40°C 2 3 4 5 6 VGE - Volts © 1997 IXYS All rights reserved 7 8 9 IC = 250µA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 0.7 0.6 0.5 -50 0 2 100 125 150 V GE(th) 1.2 1 75 1.3 16 0 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage V CE = 10V 18 25 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 14 16 18 20 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 10 12 10 10N100p1.JNB -25 0 25 50 75 TJ - Degrees C 100 125 150 IXGH 10N100U1 IXGH 10N100AU1 900 7 6 Eoff 800 5 750 4 700 3 tfi 6 8 10 12 14 16 18 20 4 tfi 3 Eoff 1 4 T J =125°C IC = 10A 600 2 600 5 800 tfi - nanoseconds T J =125°C RG=150Ω 650 1000 Eoff - millijoules 850 tfi- nanoseconds Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 400 2 200 1 0 22 Eoff - millijoules Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 0 20 40 60 IC - Amperes 80 100 120 140 160 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 15 IC = 10A VCE = 800V 10 IC - Amperes VGE- Volts 12 9 6 TJ = 125°C RG = 150Ω dV/dt < 3V/ns 1 0.1 3 0.01 0 0 10 20 30 40 0 50 200 400 600 800 1000 VCE - Volts Qg - nCoulombs Thermal Response - K/W Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 0.01 0.00001 D = Duty Cycle Single Pulse 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 10N100U1 IXGH 10N100AU1 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR 40 50 1000 TJ = 125°C IF = 12A 40 30 25 VFR - Volts Current - Amperes 35 20 TJ = 100°C 15 VFR 800 30 600 20 400 tfr TJ = 150°C 10 10 TJ = 25°C 200 5 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 Voltage Drop - Volts 0 400 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 1.4 2.0 TJ = 100°C Qr - nanocoulombs 1.2 Normalized IRM /Qr 300 1.0 0.8 IRM 0.6 Qr 0.4 VR = 540V 1.5 IF = 12A 1.0 0.5 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 1 10 TJ - Degrees C Fig.17 Reverse Recovery Time 30 600 TJ = 100°C TJ = 100°C VR = 540V 500 trr - nanoseconds IF = 12A IRM - Amperes 1000 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current 25 100 20 15 10 5 VR = 540V IF = 12A 400 300 200 100 0 0 100 200 diF /dt - A/µs © 1997 IXYS All rights reserved 300 400 0 100 200 diF /dt - A/µs 300 400 tfr - nanoseconds Fig.12 Maximum Forward Voltage Drop IXGH 10N100U1 IXGH 10N100AU1 Fig.18 Diode Transient Thermal resistance junction to case RthJC - K/W 1.0 0.1 0.001 0.003 0.01 0.1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025