CLA40P1200FC

CLA40P1200FC
High Efficiency Thyristor
VRRM
= 2x 1200 V
I TAV
=
40 A
VT
=
1,19 V
Phase leg
Part number
CLA40P1200FC
Backside: isolated
2
1
4
5
3
Features / Advantages:
Applications:
Package: i4-Pac
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 3000 V~
● Industry convenient outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
CLA40P1200FC
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
I R/D
reverse current, drain current
VT
forward voltage drop
TVJ = 25°C
50
µA
4
mA
TVJ = 25°C
1,25
V
1,49
V
1,19
V
IT =
40 A
IT =
80 A
IT =
40 A
IT =
80 A
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
TVJ = 125 °C
for power loss calculation only
thermal resistance case to heatsink
total power dissipation
I TSM
max. forward surge current
value for fusing
V
TVJ = 125°C
TC = 95 °C
RthCH
max. Unit
1300
V
VR/D = 1200 V
average forward current
Ptot
typ.
VR/D = 1200 V
I TAV
I²t
min.
1,50
V
T VJ = 150 °C
40
A
63
A
TVJ = 150 °C
0,86
V
7,9
mΩ
0,8 K/W
K/W
0,20
TC = 25°C
150
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
650
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
700
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
555
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
595
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2,12 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2,04 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
1,54 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
1,48 kA²s
25
t P = 300 µs
pF
10
W
5
W
0,5
W
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 120 A
t P = 200 µs; di G /dt = 0,3 A/µs;
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
1,5
TVJ = -40 °C
1,6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
50
mA
TVJ = -40 °C
80
mA
VGD
gate non-trigger voltage
TVJ = 150°C
0,2
V
I GD
gate non-trigger current
3
mA
IL
latching current
TVJ = 25 °C
125
mA
IG =
0,3 A; V = ⅔ VDRM
non-repet., I T =
150 A/µs
40 A
500 A/µs
1000 V/µs
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM
tp =
10 µs
IG =
0,3 A; di G /dt =
V
0,3 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
100
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,3 A; di G /dt =
0,3 A/µs
VR = 100 V; I T = 40 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
200
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
CLA40P1200FC
Package
Ratings
i4-Pac
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
70
Unit
A
-40
150
°C
-40
125
°C
150
°C
9
Weight
FC
20
mounting force with clip
d Spp/App
VISOL
t = 1 minute
Product Marking
UL listed
Logo
IXYS
mm
terminal to backside
5,1
mm
3000
V
2500
V
50/60 Hz, RMS; IISOL ≤ 1 mA
Part description
C
L
A
40
P
1200
FC
®
ISOPLUS®
=
=
=
=
=
=
=
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
i4-Pac (5)
XXXXXXXXX
Part No.
Assembly Line
N
1,7
t = 1 second
isolation voltage
120
terminal to terminal
creepage distance on surface | striking distance through air
d Spb/Apb
g
Zyyww
abcd
Date Code
Assembly Code
Ordering
Standard
Ordering Number
CLA40P1200FC
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
CLA40P1200FC
* on die level
Delivery Mode
Tube
Code No.
510210
T VJ = 150 °C
Thyristor
V 0 max
threshold voltage
0,86
V
R0 max
slope resistance *
5,4
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Quantity
25
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
CLA40P1200FC
Outlines i4-Pac
D2
A
A2
E1
L
L1
D
D3
D1
R
Q
E
c
1 2 3 4 5
4x e
4x b2
5x b
A1
b4
W
Dim.
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
Millimeter
min
max
4.83
5.21
2.59
3.00
1.17
2.16
1.14
1.40
1.47
1.73
2.54
2.79
0.51
0.74
20.80
21.34
14.99
15.75
1.65
2.03
20.30
20.70
19.56
20.29
16.76
17.53
3.81 BSC
19.81
21.34
2.11
2.59
5.33
6.20
4.57
2.54
0.10
-
Inches
min
max
0.190
0.205
0.102
0.118
0.046
0.085
0.045
0.055
0.058
0.068
0.100
0.110
0.020
0.029
0.819
0.840
0.590
0.620
0.065
0.080
0.799
0.815
0.770
0.799
0.660
0.690
0.150 BSC
0.780
0.840
0.083
0.102
0.210
0.244
0.100
0.180
0.004
-
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
1
4
5
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
CLA40P1200FC
Thyristor
150
600
120
500
IT 90
ITSM 400
[A] 60
10000
TVJ = 45°C
TVJ = 125°C
[A2s]
1,0
50 Hz, 80% VRRM
1,5
2,0
2,5
0,01
100
0,1
VT [V]
1
1
Fig. 3 I t versus time (1-10 s)
1000
80
70
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
1
50
tgd
IT(AV)M
[µs]
[A]
40
6
4
5
10
5: PGM = 1 W
6: PGM = 10 W
lim.
1000
10000
[W]
0
40
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
80
120
160
Tcase [°C]
Fig. 5 Gate controlled delay time tgd
dc =
1
0.5
0.4
0.33
0.17
0.08
40
1000
IG [mA]
Fig. 4 Gate voltage & gate current
P(AV)
0
100
IG [mA]
60
10
typ.
1
10
0,1
100
30
20
4: PGAV = 0.5 W
10
dc =
1
0.5
0.4
0.33
0.17
0.08
60
TVJ = 125°C
100
23
1
4 5 6 7 8 910
t [ms]
1: IGD, TVJ = 150°C
1
3
2
Fig. 2 Surge overload current
ITSM: crest value, t: duration
10
[V]
2
t [s]
Fig. 1 Forward characteristics
VG
TVJ = 125°C
200
100
0,5
TVJ = 45°C
1000
TVJ = 125°C
TVJ = 25°C
0
0,0
2
It
[A] 300
30
VR = 0 V
Fig. 6 Max. forward current at
case temperature
0,8
0,6
ZthJC
0,4
i Rthi (K/W)
1
0.01
2
005
3
0.17
4
0.36
5
0.21
[K/W]
20
0,2
0
ti (s)
0.0004
0.009
0.014
0.05
0.36
0,0
0
10
20
30
40
IT(AV) [A]
50 0
50
100
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c